MRF5S4140HR5 vs MRF5S4140HR3 Comparação

Comparação detalhada lado a lado de MRF5S4140HR5 por NXP Semiconductors e MRF5S4140HR3 por NXP Semiconductors. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.

NXP Semiconductors
MRF5S4140HR5 MRF5S4140HR5 - 28V, 28W RF Power MOSFET 465MHz | NXP

MRF5S4140HR5 - 28V, 28W RF Power MOSFET 465MHz | NXP

MRF5S4140HR5 ✓ Ativo
NXP Semiconductors
MRF5S4140HR3 MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP

MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP

MRF5S4140HR3 ✓ Ativo

Comparação de especificações

Parâmetro MRF5S4140HR5 MRF5S4140HR3
Marca NXP Semiconductors NXP Semiconductors
Categoria MOSFETs MOSFETs
Status do ciclo de vida Ativo Ativo
Status do estoque In Stock In Stock
Preço unitário (USD) $62,50 $30,55
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Family MRF5S series RF power MOSFET —
Tipo de transistor N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Drain-Source Voltage (V(BR)DSS) 65 V —
Typical Operating Drain Voltage 28 V —
Output Power (Pout) 28 W (CW at 465 MHz) —
Power Gain 21 dB at 465 MHz 21 dB at 465 MHz
Operating Frequency Range 400 MHz to 500 MHz —
Maximum Drain Current 1.25 A —
Encapsulamento / Caixa NI-780H-2L (2-Lead Ceramic Flange) —
Manufacturer Part Number MRF5S4140HR5 —
Test Condition Frequency 465 MHz —
Tipo de montagem Chassis / Flange Mount with Through-Hole Leads —
Status RoHS [DATA_NEEDED: RoHS compliance per manufacturer datasheet] [DATA_NEEDED: explicit RoHS status not in web data]
Lead-Free [DATA_NEEDED: lead-free per manufacturer datasheet] [DATA_NEEDED: lead-free status not in web data]
Frequency Band — 400-500 MHz
Test Frequency — 465 MHz
Typical Output Power — 28 W avg.
Operating Drain Voltage — 28 V typical
Drain-Source Voltage (Max) — 65 V
DC Bias Current (Id) — 1.25 A typical
Configuration — Single, common-source
Maximum Power Dissipation — 427 W absolute (per partstack profile)
Encapsulamento — NI-780H-2L (ceramic flange mount)
Estilo de montagem — Flange mount, surface-mount leads
Input Matching — Internal, broadband
Operating Mode — Class AB, large-signal
Application — Single N-CDMA base station PA, 450 MHz band

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