MRF5S4140HR5 vs MRF5S4140HR3 对比

详细并排对比 MRF5S4140HR5 出自 NXP Semiconductors 和 MRF5S4140HR3 出自 NXP Semiconductors。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

NXP Semiconductors
MRF5S4140HR5 MRF5S4140HR5 - 28V, 28W RF Power MOSFET 465MHz | NXP

MRF5S4140HR5 - 28V, 28W RF Power MOSFET 465MHz | NXP

MRF5S4140HR5 ✓ 量产中
NXP Semiconductors
MRF5S4140HR3 MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP

MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP

MRF5S4140HR3 ✓ 量产中

规格对比

参数 MRF5S4140HR5 MRF5S4140HR3
品牌 NXP Semiconductors NXP Semiconductors
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $62.50 $30.55
Manufacturer NXP Semiconductors (formerly Freescale) —
Part Family MRF5S series RF power MOSFET —
晶体管类型 N-Channel Enhancement-Mode Lateral MOSFET N-Channel Enhancement-Mode Lateral MOSFET (LDMOS)
Drain-Source Voltage (V(BR)DSS) 65 V —
Typical Operating Drain Voltage 28 V —
Output Power (Pout) 28 W (CW at 465 MHz) —
Power Gain 21 dB at 465 MHz 21 dB at 465 MHz
Operating Frequency Range 400 MHz to 500 MHz —
Maximum Drain Current 1.25 A —
封装 / 外壳 NI-780H-2L (2-Lead Ceramic Flange) —
Manufacturer Part Number MRF5S4140HR5 —
Test Condition Frequency 465 MHz —
安装类型 Chassis / Flange Mount with Through-Hole Leads —
RoHS 状态 [DATA_NEEDED: RoHS compliance per manufacturer datasheet] [DATA_NEEDED: explicit RoHS status not in web data]
Lead-Free [DATA_NEEDED: lead-free per manufacturer datasheet] [DATA_NEEDED: lead-free status not in web data]
Frequency Band — 400-500 MHz
Test Frequency — 465 MHz
Typical Output Power — 28 W avg.
Operating Drain Voltage — 28 V typical
Drain-Source Voltage (Max) — 65 V
DC Bias Current (Id) — 1.25 A typical
Configuration — Single, common-source
Maximum Power Dissipation — 427 W absolute (per partstack profile)
封装 — NI-780H-2L (ceramic flange mount)
安装方式 — Flange mount, surface-mount leads
Input Matching — Internal, broadband
Operating Mode — Class AB, large-signal
Application — Single N-CDMA base station PA, 450 MHz band

数据手册与资源

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