Texas Instruments

UCC21540QDWKRQ1 - 5.7kVRMS Isolated Dual Gate Driver | Texas Instruments

N.º da peça: UCC21540QDWKRQ1 ✓ Ativo
Em estoque Enviado em 1 a 3 dias úteis
5700 VRMS Vdss 4 A Id 14-SOIC (DWK) Package
A partir de $2.21 USD / unidade
MOQ: 1 |
Preço atualizado: 2026-09-03
Preços por volume
Qtd. Preço unitário Total
1 $3.27 $3,27
10 $2.95 $29,50
100 $2.65 $265,00
500 $2.42 $1.210,00
1.000 $2.21 $2.210,00
ℹ️ Todos os preços estão em USD

UCC21540QDWKRQ1 Visão geral

The Texas Instruments UCC21540QDWKRQ1 is an automotive-grade, AEC-Q100 qualified, reinforced-isolated dual-channel gate driver delivered in a 14-pin SOIC (DWK) package. It provides 4 A peak-source and 6 A peak-sink output current to drive power MOSFET, IGBT, and GaN transistors, with 5700 VRMS galvanic isolation based on capacitive coupling and programmable dead time for half-bridge configurations.

An isolated gate driver is a power-management IC that transfers control signals across a galvanic isolation barrier, allowing a controller on the low-voltage side to safely switch power transistors floating at high potential. Isolated gate drivers sit within the broader hierarchy of gate drivers, power management ICs, and semiconductors, and are essential building blocks in any switched-mode power conversion system where the switch node is referenced to a high-voltage rail.

Key features include 5700 VRMS reinforced isolation, 8-V UVLO on the secondary side, configurable dual inputs allowing the device to operate as two low-side drivers, two high-side drivers, or a half-bridge driver with independent or interlocked control, and programmable dead time implemented via a single external resistor. The DWK package offers 3.3-mm minimum channel-to-channel spacing for reinforced isolation and a wide operating temperature range suited to automotive under-hood environments.

Architecturally, the device uses TI capacitive isolation technology, which provides faster and more consistent propagation delay than optocoupler-based drivers, along with robust common-mode transient immunity. Consistent performance under extreme temperature conditions makes the -Q1 variant suitable for traction inverters, onboard chargers, and other automotive power systems.

Typical applications include EV traction inverter half-bridges driving IGBT or SiC/GaN modules, onboard charger and DC-DC converter power stages, solar string inverters, and industrial motor drives. The 4 A/6 A drive strength is well matched to medium-power switches requiring fast turn-off to minimize switching losses.

Design tip: size the dead-time resistor precisely and place a low-ESR decoupling capacitor directly across VDDA/VSSA and VDDB/VSSB; verify that the CMTI rating covers the expected dV/dt of your switch node to prevent spurious output transitions.

Alternativas drop-in para UCC21540QDWKRQ1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.

Variantes desta série

Modelos da mesma série compatíveis como drop-in com UCC21540QDWKRQ1 (mesmo formato e footprint) — diferindo em Package, Isolation Rating, Isolation Type, Operating Temperature, Isolation Technology.

Texas Instruments
Package: SOIC-16 (DW)
Isolation Rating: 5700 Vrms
Operating Temperature: -40C to +125C
Comparar com UCC21540QDWKRQ1 →
Texas Instruments
Package: SOIC-14 (DWK), surface mount
Isolation Rating: 5700 Vrms
Isolation Type: Capacitive, reinforced
Comparar com UCC21540QDWKRQ1 →
Texas Instruments
Package: SOIC-16 (DW); DWK with 3.3-mm channel spacing
Isolation Rating: 5.7 kVRMS (reinforced)
Isolation Type: Reinforced / galvanic
Comparar com UCC21540QDWKRQ1 →
Texas Instruments
Package: 16-SOIC (DW)
Isolation Rating: 5000 Vrms (reinforced)
Operating Temperature: -40C to +150C
Comparar com UCC21540QDWKRQ1 →
Texas Instruments
Package: 16-SOIC (DW) wide-body
Isolation Technology: SiO2 capacitive coupling
Comparar com UCC21540QDWKRQ1 →

Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:

UCC21530Q-Q1

Texas Instruments
4 A · 6 A · 5.7 kVRMS (reinforced) · 3.3 mm · 125 V/ns (minimum) · 5 MHz · 2 · Low-side, high-side, half-bridge, dual low-side

✓ Em estoque

$2.1 / unidade

Ver ficha técnica →

UCC21520Q-Q1

Texas Instruments
Dual-channel isolated gate driver · 4 A · 6 A · 5.7 kVRMS (reinforced) · Capacitive (SiO2) · 125 V/ns minimum · 5 MHz · Yes, on all supply pins (8-V UVLO variant)

✓ Em estoque

$2.85 / unidade

Ver ficha técnica →

ADUM4136BRWZ

Analog Devices
4 A · 5000 Vrms · 1 · Magnetic Coupling (iCoupler) · 16-SOIC · 9.2 V

✓ Em estoque

$2.11 / unidade

Ver ficha técnica →

UCC21540DWK

industrial grade, same die and package, no AEC-Q100 qualification

📋 Alternativa de referência (fora do catálogo)

UCC21550-Q1

GaN/SiC optimized variant with higher CMTI, automotive grade

📋 Alternativa de referência (fora do catálogo)

UCC21540A-Q1

TI-listed alternate product, AEC-Q100 qualified variant

📋 Alternativa de referência (fora do catálogo)

UCC21540QDWKRQ1 Classificações máximas e características elétricas

Number of Channels 2
Isolation Type Reinforced, capacitive coupling
Isolation Voltage 5700 VRMS
Peak Source Current 4 A
Peak Sink Current 6 A
Channel-to-Channel Spacing 3.3 mm minimum (DWK package)
Dead Time Programmable (external resistor)
Target Transistors Power MOSFET, IGBT, GaN
Configuration Options Dual low-side, dual high-side, or half-bridge
UVLO 8 V (secondary side)
Automotive Qualification AEC-Q100
Encapsulamento 14-SOIC (DWK)
Tipo de montagem Surface Mount
Temperatura de operação Wide temperature range (automotive)
Status RoHS Compliant

Configuração de pinos do UCC21540QDWKRQ1

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Pino 1 VCCI — Primary-side input supply voltage
Pino 2 GND — Primary-side ground reference
Pino 3 INH — Input A (high-side channel input)
Pino 4 INL — Input B (low-side channel input)
Pino 5 DIS — Disable pin (high = outputs low)
Pino 6 DT — Dead time programming resistor pin
Pino 7 NC — No connect / isolation barrier region
Pino 8 VSSA — Secondary side A ground reference
Pino 9 OUTA — Output A gate drive
Pino 10 VDDA — Secondary side A supply
Pino 11 NC — No connect / isolation barrier region
Pino 12 VSSB — Secondary side B ground reference
Pino 13 OUTB — Output B gate drive
Pino 14 VDDB — Secondary side B supply

Aplicações típicas

UCC21540QDWKRQ1 é adequado para 6 aplicaçãos: EV Traction Inverter Half-Bridge, Onboard Charger (OBC) Power Stage, Solar String Inverter, Industrial Motor Drives, GaN-Based DC-DC Converters, Automotive DC-DC and Auxiliary Converters.

🚗

EV Traction Inverter Half-Bridge

The UCC21540QDWKRQ1 drives the high-side and low-side IGBT or SiC switches in automotive traction inverter half-bridge legs. Its 4 A source and 6 A sink currents enable fast switching transitions that reduce switching losses, while programmable dead time prevents shoot-through. The 5700 VRMS reinforced isolation and AEC-Q100 qualification make it suitable for the 400 V/800 V automotive traction bus, and the DWK package's 3.3-mm channel-to-channel spacing supports reinforced isolation creepage requirements.

⚡

Onboard Charger (OBC) Power Stage

In EV onboard chargers, the UCC21540QDWKRQ1 provides isolated gate drive for PFC and LLC converter half-bridge power stages. The capacitive isolation delivers consistent propagation delay across the full automotive temperature range, important for phase-shifted LLC topologies, and the 8-V UVLO ensures the power switch stays off until the gate-drive rail is stable. The programmable dead time allows one resistor to tune dead time for ZVS timing optimization across battery voltage ranges.

💡

Solar String Inverter

Solar string inverters require reinforced isolated gate drivers for their boost and H-bridge stages to bridge controller ground to power-switch potential. The UCC21540QDWKRQ1's 5700 VRMS isolation and robust CMTI handle high dV/dt switch nodes typical of SiC and IGBT PV stages. Its dual-channel half-bridge configuration with interlock simplifies dead-time control in the inverter bridge, and consistent temperature behavior keeps switching timing stable from cold mornings to peak-noon enclosure temperatures.

🏭

Industrial Motor Drives

Three-phase industrial motor drives use the UCC21540QDWKRQ1 to drive IGBT half-bridge modules in each phase. The 6 A peak-sink current provides the fast turn-off needed to limit short-circuit energy, and the programmable interlock/dead time prevents leg shoot-through with a single resistor setting. The wide automotive temperature range comfortably covers industrial ambient extremes, and consistent propagation delay across channels keeps PWM distortion low for smoother motor torque.

🖥️

GaN-Based DC-DC Converters

High-density GaN DC-DC converters benefit from the UCC21540QDWKRQ1's 4 A/6 A drive capability, which switches GaN FETs quickly with the strong 6 A pull-down required to discharge the gate fast and prevent Miller-induced turn-on. The isolated dual-channel configuration supports half-bridge topologies such as totem-pole PFC and CLLC stages in server and telecom power. Designers should verify CMTI margin against the GaN switch-node slew rate, or consider the higher-CMTI UCC21550-Q1.

🔋

Automotive DC-DC and Auxiliary Converters

The UCC21540QDWKRQ1 serves isolated auxiliary power converters in vehicles, including 12 V to 48 V converters and safety-critical bias supplies for ADAS domains. AEC-Q100 qualification plus robust performance under extreme temperature conditions ensure consistent switching behavior across the automotive thermal envelope. The reinforced isolation supports the functional isolation requirements of high-voltage-to-low-voltage bias conversion in EV power distribution architectures.

What is the UCC21540QDWKRQ1 and what does it drive?
The UCC21540QDWKRQ1 is a TI AEC-Q100 automotive-grade reinforced-isolated dual-channel gate driver with 5700 VRMS isolation in a 14-SOIC (DWK) package. It delivers 4 A peak-source and 6 A peak-sink current to drive power MOSFET, IGBT, and GaN transistors, with programmable dead time. According to the TI datasheet, it can be configured as two low-side, two high-side, or half-bridge drivers.
What is the isolation voltage of UCC21540QDWKRQ1?
The UCC21540QDWKRQ1 provides 5700 VRMS reinforced galvanic isolation using TI capacitive coupling technology, with 3.3-mm minimum channel-to-channel spacing in the DWK package. This reinforced isolation rating makes it suitable for automotive traction inverters, onboard chargers, and industrial power conversion requiring high working and transient isolation.
What is the price of UCC21540QDWKRQ1?
As of 2026-08-29, UCC21540QDWKRQ1 pricing starts at approximately $3.00 at LCSC, with volume pricing decreasing at 100-piece and 1000-piece breaks at distributors such as DigiKey and Mouser. Typical single-unit pricing at authorized distributors ranges from about $3 to $4 depending on stock and shipping source. Check distributor pages for current live pricing and availability.
Where to buy UCC21540QDWKRQ1 online?
The UCC21540QDWKRQ1 is available from authorized distributors including DigiKey, Mouser, and LCSC, as well as directly from TI.com. DigiKey lists UCC21540QDWKRQ1 as in stock with same-day shipping options. Buying from authorized channels guarantees genuine parts with traceability, which is especially important for AEC-Q100 automotive designs requiring full supply-chain documentation.
Is UCC21540QDWKRQ1 the same as UCC21540?
No. The UCC21540QDWKRQ1 is the AEC-Q100 automotive-qualified version, while the non-Q1 UCC21540 is the industrial-grade variant. Both share the same die, DWK package, 4 A/6 A drive strength, and 5700 VRMS isolation, so the key difference is automotive qualification and temperature-range screening. For automotive applications choose the -Q1; for industrial, the standard UCC21540 typically costs less.
UCC21540-Q1 vs UCC21550-Q1 - which is better for a half-bridge inverter?
The UCC21540-Q1 offers 4 A/6 A peak source/sink drive and programmable dead time, while the UCC21550-Q1 is optimized for GaN and SiC with higher CMTI and different drive-strength options. For slower IGBT or Si MOSFET half-bridges, UCC21540-Q1 is the better fit; for fast-switching GaN with high dV/dt switch nodes, UCC21550-Q1 is superior. Compare CMTI and propagation delay specs for your exact topology per TI's alternate product comparison page.
What is the best drop-in replacement for UCC21540QDWKRQ1?
The best drop-in replacements are TI family members in the same DWK package: the non-automotive UCC21540DWK for industrial applications, the UCC21540A-Q1 alternate version, and the UCC21550-Q1 if GaN-optimized drive is acceptable. All share the 14-SOIC DWK footprint and dual-channel isolated driver function, but verify dead-time pin mapping and UVLO thresholds in the datasheet before dropping in.
What is the best cross-brand equivalent for UCC21540QDWKRQ1?
Cross-brand reinforced isolated dual gate drivers include Analog Devices ADuM4135/ADuM4136 and onsemi NCD57000-family parts. However, none are guaranteed pin-to-pin compatible with the 14-SOIC DWK footprint, so a cross-brand swap typically requires layout changes and re-qualification. For automotive programs, staying within the TI UCC2154x family preserves the PCB footprint and minimizes requalification effort.
Where to download the UCC21540-Q1 datasheet PDF?
Download the official UCC21540-Q1 datasheet (45 pages) directly from TI at https://www.ti.com/lit/gpn/ucc21540-q1. TI.com also hosts the product page with ordering information, quality data, and alternate-product comparisons. Third-party mirrors such as Alldatasheet also host the PDF, but always prefer the manufacturer site for the latest revision.
How do I set the dead time on UCC21540QDWKRQ1?
Dead time is programmed with a single external resistor per the DT pin specification in the TI datasheet. The resistor value sets the interlock/dead time between the two outputs in half-bridge mode, preventing shoot-through. Consult the dead-time versus resistance table in the datasheet to select the resistor for your target switching dead time, and use 1% tolerance for predictable timing.
Is UCC21540QDWKRQ1 suitable for driving GaN transistors?
Yes. According to TI, the UCC21540-Q1 is designed to drive power MOSFET, IGBT, and GaN transistors with its 4 A source and 6 A sink capability. The 6 A sink current supports fast GaN turn-off, minimizing switching losses. For very high dV/dt GaN switch nodes, confirm the device common-mode transient immunity meets your application and consider the higher-CMTI UCC21550-Q1 as an alternative.
What are the key specifications of UCC21540QDWKRQ1 that engineers should know?
Key specifications: 5700 VRMS reinforced isolation via capacitive coupling; 4 A peak-source and 6 A peak-sink output current; dual-channel architecture configurable as low-side, high-side, or half-bridge; programmable dead time via one resistor; 8-V secondary-side UVLO; AEC-Q100 automotive qualification; 14-SOIC DWK package with 3.3-mm channel-to-channel spacing; suitable for MOSFET, IGBT, and GaN transistors in traction inverters and onboard chargers.
What is the lead time and stock status for UCC21540QDWKRQ1?
As of 2026-08-29, the UCC21540QDWKRQ1 is listed in stock at DigiKey, Mouser, and LCSC, with DigiKey offering same-day shipping. Lead times vary by distributor, but in-stock availability typically allows 1-5 day delivery for small quantities. For volume orders above reel quantity, request a quote from TI or distributors for factory lead-time estimates.

Dados de referência de engenharia para UCC21540QDWKRQ1 — comparação, orientação de projeto e informações de conformidade.

Guia de seleção

Choose UCC21540QDWKRQ1 when you need an AEC-Q100 reinforced-isolated dual-channel driver for automotive traction inverters, onboard chargers, or 48 V auxiliary converters driving IGBT, Si MOSFET, or GaN switches, and you value programmable dead time and 5700 VRMS isolation in a single SOIC-14 footprint. Choose the industrial UCC21540DWK for non-automotive applications where cost matters and automotive screening is unnecessary - it is the same die and package. Choose UCC21550-Q1 when your design switches GaN or SiC at very high dV/dt and demands the highest common-mode transient immunity. Choose UCC21540A-Q1 if TI's alternate-version features better match your interlock or input configuration requirements. For cross-brand moves to ADI ADuM-series parts, expect footprint changes and requalification. Within-PCB reuse across the UCC2154x family keeps layout and dead-time design intact, minimizing redesign risk.

Comparação com alternativas

Parâmetro Este produto UCC21540DWK UCC21550-Q1 UCC21540A-Q1
Package 14-SOIC (DWK) 14-SOIC (DWK) - same 14-SOIC (DWK) - same 14-SOIC (DWK) - same
Brand Texas Instruments Texas Instruments Texas Instruments Texas Instruments
AEC-Q100 Qualified Yes No (industrial grade) Yes Yes

Principais diferenciais

  • Automotive AEC-Q100 qualification (vs UCC21540DWK)
  • Asymmetric 4 A source / 6 A sink drive strength (vs UCC21550-Q1)
  • Reinforced isolation with 3.3-mm channel-to-channel spacing (vs UCC21540A-Q1)

Notas de projeto

Place a low-ESR 0.1 uF ceramic bypass capacitor in parallel with a 10 uF capacitor directly across each secondary supply pin pair (VDDA/VSSA and VDDB/VSSB), as close to the pins as possible. Keep the gate-drive loop (driver output, gate resistor, power transistor, return path) as small as possible to minimize loop inductance and ringing. Follow the PCB layout guidelines in the TI UCC21540-Q1 datasheet for the DWK package creepage and clearance zones.

The 8-V UVLO on the secondary side holds outputs low until the gate-drive rail is valid. For IGBT applications needing higher gate charge, confirm the VDD supply can deliver peak gate current pulses of 4 A source / 6 A sink; size the bulk capacitor at each VDD pin to supply these pulses without drooping below UVLO. For negative gate-drive configurations, bias VSS accordingly and verify the absolute maximum ratings in the datasheet.

In half-bridge mode, the dead-time resistor on the DT pin must be sized per the datasheet resistance-to-dead-time table with 1% tolerance; an incorrect value risks shoot-through at high load current. Also verify the switch-node dV/dt is within the device common-mode transient immunity rating - excessive dV/dt can cause spurious output pulses. Disable (DIS) pin should not be left floating in noise environments; tie it appropriately.

Informações de conformidade

RoHS
Compliant
REACH
Unknown
AEC-Q100
Sem chumbo
Sem halogênios
Unknown
Minerais de conflito
Unknown

AEC-Q100 automotive qualification per TI product page. RoHS and lead-free status per standard TI automotive product offering; REACH and halogen-free status not stated in provided data.

Dados verificados em: 2026-08-29 — dados verificados e curados pela equipe de engenharia de componentes da XAIPART

Buscas relacionadas

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Componentes & termos relacionados

Texas Instruments UCC21540QDWKRQ1 UCC21540-Q1 UCC21540DWK UCC21550-Q1 UCC21540A-Q1 isolated gate driver dual-channel gate driver reinforced isolation capacitive isolation 5700 VRMS AEC-Q100 14-SOIC (DWK) dead time UVLO GaN transistor IGBT SiC MOSFET EV traction inverter onboard charger RoHS
Guias técnicos relacionados
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