IAUCN08S7N034ATMA1 - 80V 120A 3.4mΩ Automotive MOSFET | Infineon
N.º da peça: IAUCN08S7N034ATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.52 | $25,20 |
| 100 | $2.21 | $221,00 |
| 500 | $1.94 | $970,00 |
| 1.000 | $1.71 | $1.710,00 |
| 3.000 | $1.48 | $4.440,00 |
IAUCN08S7N034ATMA1 Visão geral
An N-channel power MOSFET is a voltage-controlled semiconductor switch in which majority-carrier electron conduction (rather than minority-carrier transport) enables very fast switching and very low on-state resistance. MOSFETs belong to the discrete semiconductor family, sit within the broader power management hierarchy, and are the workhorse of switched-mode power supplies, synchronous rectifiers, and hot-swap circuits. The OptiMOS™ 7 process is Infineon's seventh-generation trench technology, which shrinks cell pitch to lower R<sub>DS(on)</sub> per unit area while reducing gate charge and improving switching loss.
Key electrical characteristics include a drain-source breakdown voltage V<sub>(BR)DSS</sub> of 80 V, a continuous I<sub>D</sub> rating of 120 A at 25 °C case (much lower at 175 °C T<sub>J</sub>), a pulsed avalanche current rating, and typical gate charge Q<sub>G</sub> of 45.8 nC at V<sub>GS</sub>=10 V. The 3.4 mΩ R<sub>DS(on)</sub> produces 0.41 W conduction loss per ampere of drain current, while the 23 pF C<sub>iss</sub> and 3.115 nF C<sub>oss</sub> keep switching energy moderate for a 100 V class device.
The PG-TDSON-8-34 (5 mm × 6 mm) package uses an exposed metal drain tab that doubles as the thermal pad, giving an R<sub>thJA</sub> suitable for 118 W power dissipation on a properly designed 1 oz copper FR-4 PCB. The package is lead-free, RoHS compliant, and rated MSL 1, simplifying automotive board assembly.
Typical applications include 48 V mild-hybrid DC-DC converters, 12 V automotive buck/boost converters, electric power steering (EPS) half-bridges, HVAC blower and pump drivers, and battery disconnect switches in e-mobility. The AEC-Q101 grade-1 (-55 °C to +175 °C T<sub>J</sub>) qualification also makes it suitable for industrial high-current switching and telecom hot-swap controllers.
When designing with this device, place the gate-drive loop as compact as possible (gate resistor, gate-source pull-down, and IC within 5 mm of the gate pad) to suppress ringing on the 80 V-rated gate oxide. Verify that V<sub>GS(th)</sub> stays above 3.2 V minimum across temperature to prevent parasitic turn-on in half-bridge configurations, and size the PCB copper flood under the exposed pad to keep junction temperature below 150 °C at worst-case steady-state load.
This page synthesizes distributor pricing, verified automotive-grade drop-in alternatives, and PCB-level design notes not found in the manufacturer datasheet - useful for automotive power engineers evaluating 80 V MOSFET platforms.
Alternativas drop-in para IAUCN08S7N034ATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IAUCN08S7N034ATMA1 (mesmo formato e footprint) — diferindo em Package, Operating Temperature Range, Technology, Series, Drain-Source Voltage (VDS).
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IAUC50N08S5L096ATMA1
✅ Drop-In✓ Em estoque
$0.98 / unidade
Ver ficha técnica →IAUC60N06S5L073ATMA1
✅ Drop-In✓ Em estoque
$0.41 / unidade
Ver ficha técnica →IAUC100N08S5N043ATMA1
✅ Drop-In✓ Em estoque
$1.72 / unidade
Ver ficha técnica →IAUCN04S7N006ATMA1
✅ Drop-In✓ Em estoque
$0.95 / unidade
Ver ficha técnica →IAUCN04S7L006ATMA1
✅ Drop-In✓ Em estoque
$1.38 / unidade
Ver ficha técnica →ISC016N08NM8ATMA1
✅ Drop-In✓ Em estoque
$1.02 / unidade
Ver ficha técnica →IAUCN08S7N034ATMA1 Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 7 |
| Tipo de transistor | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 120 A |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | 3.4 mΩ |
| Gate-Source Threshold (V<sub>GS(th)</sub>) | 3.2 V (typ) |
| Total Gate Charge (Q<sub>G</sub>) | 45.8 nC @ V<sub>GS</sub>=10 V |
| Input Capacitance (C<sub>iss</sub>) | 1.27 nF |
| Output Capacitance (C<sub>oss</sub>) | 3.115 nF |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 23 pF |
| Power Dissipation (P<sub>D</sub>) | 118 W |
| Temperatura de junção de operação | -55°C to +175°C |
| Encapsulamento | PG-TDSON-8-34 (TDSON EP) |
| Tipo de montagem | Surface Mount |
| Nível MSL | MSL 1 (unlimited floor life) |
| Automotive Qualification | AEC-Q101 |
| Status RoHS | Compliant |
Configuração de pinos do IAUCN08S7N034ATMA1
| Pino 1 | Source — Source connection (low-side) |
| Pino 2 | Source — Source connection (low-side) |
| Pino 3 | Source — Source connection (low-side) |
| Pino 4 | Gate — Gate drive input |
| Pino 5 | Source — Source connection (low-side) |
| Pino 6 | Source — Source connection (low-side) |
| Pino 7 | Source — Source connection (low-side) |
| Pino 8 | Source — Source connection (low-side) |
| Pino EP | Drain (Exposed Pad) — Drain and thermal pad - must be soldered to PCB copper |
Área de Operação Segura (DC, T_C=25°C)
Aplicações típicas
IAUCN08S7N034ATMA1 é adequado para 6 aplicaçãos: 48V Mild-Hybrid DC-DC Converter, 12V/24V Automotive Buck-Boost Converter, Electric Power Steering (EPS) Half-Bridge, HVAC Blower and Pump Motor Driver, Battery Disconnect and Hot-Swap Switch, Industrial High-Current Switching and Telecom Hot-Swap.
48V Mild-Hybrid DC-DC Converter
The IAUCN08S7N034ATMA1 fits 48V mild-hybrid DC-DC converter high-side and low-side switches because its 80V V<sub>DS</sub> provides 30% avalanche margin above 48V bus transients and its 3.4 mΩ R<sub>DS(on)</sub> at 10V V<sub>GS</sub> keeps synchronous-rectifier conduction loss under 2W at 25A. The 45.8 nC Q<sub>G</sub> and 23 pF C<sub>rss</sub> permit 100-200 kHz switching with manageable driver loss. AEC-Q101 grade-1 -55°C to +175°C qualification matches 48V eM powertrain thermal environments where the part sees constant under-hood ambient stress. Pair it with a UCC27211A or 1EDI20N12AFXUMA1 gate driver for a clean 48V-to-12V buck stage reaching 96%+ peak efficiency.
Recomendado
12V/24V Automotive Buck-Boost Converter
In 12V-to-24V or 24V-to-12V bidirectional converters, the IAUCN08S7N034ATMA1 serves as both high-side and low-side switch thanks to its 80V V<sub>DS</sub> rating covering 24V bus plus load-dump transients up to 35V. The 3.4 mΩ R<sub>DS(on)</sub> at full 120A delivers 14W conduction loss - manageable on a 4-layer 2oz-copper PCB where R<sub>thJA</sub> falls into the high-30s °C/W. OptiMOS™ 7's reduced Q<sub>GD</sub>/Q<sub>GS</sub> ratio also minimizes body-diode-induced shoot-through in hard-commutated buck stages. The exposed drain tab doubles as a thermal pad, allowing direct copper-flood cooling under the hood of conventional and mild-hybrid vehicles.
Recomendado
Electric Power Steering (EPS) Half-Bridge
The IAUCN08S7N034ATMA1 is well-suited for EPS brushless-DC half-bridge stages where peak phase currents reach 80-100 A during parking maneuvers. The 120 A continuous I<sub>D</sub> rating provides adequate margin against locked-rotor inrush, while the 80V V<sub>DS</sub> comfortably handles inductive flyback from the steering-motor stator. AEC-Q101 grade-1 qualification and 175°C T<sub>J(max)</sub> allow mounting near the steering column where ambient temperatures reach 125°C. Low R<sub>DS(on)</sub> also reduces I²R loss during continuous highway assist, helping meet ISO 26262 ASIL-D power-conversion efficiency targets.
Recomendado
HVAC Blower and Pump Motor Driver
Inside HVAC blower and water-pump inverter modules, the IAUCN08S7N034ATMA1 acts as the low-side switch in a 3-phase bridge driving 12V or 48V BLDC motors up to 1 kW. The 3.4 mΩ R<sub>DS(on)</sub> yields 0.5-1.5W conduction loss per switch at typical 15-20A RMS phase currents, enabling compact PCB designs without forced airflow. Its AEC-Q101 grade and -55°C cold-start capability address underhood and chassis-mounted HVAC modules operating across arctic and desert climates. OptiMOS™ 7's low Q<sub>rr</sub> further reduces switching loss during PWM commutation at 20-25 kHz.
Recomendado
Battery Disconnect and Hot-Swap Switch
For 12V/24V/48V battery disconnect units and hot-swap controllers, the IAUCN08S7N034ATMA1's 80V V<sub>DS</sub> rating provides headroom over the highest expected bus voltage, while its 3.4 mΩ R<sub>DS(on)</sub> keeps steady-state I²R loss low enough to operate continuously at 80-100 A without active cooling. AEC-Q101 grade-1 qualification and a 175°C maximum junction temperature suit underhood or battery-pack-adjacent placement. The 45.8 nC total gate charge allows fast (sub-100 µs) turn-on, limiting inrush into downstream bulk capacitors. A TVS-protected gate network is recommended to clamp V<sub>GS</sub> below 20V during load-dump events.
Recomendado
Industrial High-Current Switching and Telecom Hot-Swap
Outside automotive, the IAUCN08S7N034ATMA1 is used in industrial 48V-60V bus converters and telecom -48V hot-swap front ends. The 80V V<sub>DS</sub> comfortably tolerates -48V plus transient excursions up to -75V, and the 120A I<sub>D</sub> rating supports 2-3 kW shelf-power designs. Low Q<sub>rr</sub> reduces body-diode reverse-recovery stress in hard-switched buck stages driving PoE and 5G small-cell power modules. Although targeted at automotive, AEC-Q101 qualification exceeds industrial reliability expectations, providing extra margin in 24/7 always-on telecom and server applications.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IAUCN08S7N034ATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IAUC50N08S5L096ATMA1 | IAUC60N06S5L073ATMA1 | IAUC100N08S5N043ATMA1 | IAUCN04S7N006ATMA1 | ISC016N08NM8ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (TDSON EP) | PG-TDSON-8 (same) | PG-TDSON-8 (same) | PG-TDSON-8 (same) | PG-TDSON-8 (same) | PG-TDSON-8 (same) |
| V_DS (V) | 80 V | 80 V | 60 V | 80 V | 40 V | 80 V |
| R_DS(on) max @ 10V (mΩ) | 3.4 mΩ | 9.6 mΩ | 7.3 mΩ | 4.3 mΩ | 0.6 mΩ | 1.6 mΩ |
| Generation | OptiMOS 7 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 7 | OptiMOS 7 |
| Automotive Qualified | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) | Yes (AEC-Q101) |
Principais diferenciais
- Lower R_DS(on) than OptiMOS 5 predecessor at same V_DS (vs IAUC100N08S5N043ATMA1)
- Higher V_DS headroom than 60 V OptiMOS parts in same footprint (vs IAUC60N06S5L073ATMA1)
- Lower conduction loss than higher-V_DS alternatives (vs IAUC50N08S5L096ATMA1)
Notas de projeto
Estimated: at 80 A continuous drain current, the IAUCN08S7N034ATMA1 dissipates roughly I² × R = 80² × 0.0034 = 21.8 W. With θJA around 40 °C/W on a 4-layer 2 oz copper PCB, junction temperature rise is ~870 °C above 25 °C ambient - therefore continuous operation should be limited to ~50 A on standard 1 oz copper or a 4-layer 2 oz board with airflow is mandatory above 80 A. The exposed drain pad MUST be soldered to a copper flood of at least 200 mm² to meet R<sub>thJA</sub> specifications.
Keep the high-di/dt gate-drive loop (gate resistor → gate pin → kelvin source → driver GND) smaller than 5 mm total path length to prevent shoot-through and gate-oscillation on this 80 V-rated oxide. Source pins 1-3 and 5-8 must all be soldered to the same low-impedance copper plane; any missing source pin forces current through the bond wires and raises R<sub>DS(on)</sub> by 30-50%. Place a 10 Ω gate resistor and 10 kΩ gate-source pull-down resistor within 3 mm of the gate pad.
Do not operate the IAUCN08S7N034ATMA1 with V<sub>GS</sub> above ±20 V - the 80 V V<sub>DS</sub> rating does NOT extend to V<sub>GS</sub>. Use a 12-15 V gate-drive supply with a Zener or TVS clamp for protection against load-dump-induced V<sub>GS</sub> overshoot. In half-bridge configurations, the body-diode reverse-recovery (Q<sub>rr</sub>) can cause shoot-through; add 200-500 ns of dead-time in the controller and consider an anti-parallel SiC diode for hard-switched legs above 50 kHz.
Informações de conformidade
AEC-Q101 (automotive equivalent of AEC-Q100 for discrete semiconductors) qualified. RoHS and REACH compliant per Arrow and JLCPCB distributor listings. Lead-free and halogen-free per Infineon product family standard.
