IPB020NE7N3GATMA1 - 75V 120A N-Channel MOSFET | Infineon OptiMOS
N.º da peça: IPB020NE7N3GATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $4.12 | $4,12 |
| 10 | $3.78 | $37,80 |
| 100 | $3.21 | $321,00 |
| 500 | $2.74 | $1.370,00 |
| 1.000 | $2.31 | $2.310,00 |
IPB020NE7N3GATMA1 Visão geral
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or switch high currents at high speeds in power-conversion circuits. It sits in the broader hierarchy of power discretes: MOSFET -> transistor -> discrete semiconductor -> semiconductor device. N-channel enhancement-mode MOSFETs such as the IPB020NE7N3GATMA1 are the workhorse of high-current switching applications because their majority-carrier conduction yields lower switching losses than bipolar alternatives, and they require only a gate-drive voltage rather than continuous base current.
Key features include the very low 2.0 mΩ maximum RDS(on) at VGS=10V, avalanche-rated single-pulse robustness for unclamped inductive switching environments, and a logic-level-compatible gate threshold (typical VGS(th) around 2-3V) suitable for direct MCU or gate-driver control. The D²PAK package provides a tab-connected drain that doubles as a large PCB heatsink footprint, while the surface-mount form factor supports automated assembly.
Typical applications include high-current DC-DC synchronous rectification in 48V telecom and server VRMs, battery protection and load switching in e-mobility and power-tool packs, motor drive H-bridges and three-phase inverter low-side switches, and hot-swap / OR-ing controllers in industrial redundant supplies. In each, the low RDS(on) directly cuts conduction loss and improves system efficiency at full load.
When designing with this device, ensure the gate-drive voltage reaches the full 10V enhancement level and that the PCB copper area under the D²PAK tab is sized to keep junction temperature below the maximum rating. The 300W power dissipation figure is a Tc-rated value and must be thermally verified against the actual PCB layout.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para IPB020NE7N3GATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IPB020NE7N3GATMA1 (mesmo formato e footprint) — diferindo em Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, Continuous Drain Current (ID) at Tc.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
BSC036NE7NS3GATMA1
✅ Drop-In✓ Em estoque
$0.82 / unidade
Ver ficha técnica →BSC042NE7NS3GATMA1
✅ Drop-In✓ Em estoque
$1.24 / unidade
Ver ficha técnica →IPB072N15N3GATMA1
✅ Drop-In✓ Em estoque
$2.84 / unidade
Ver ficha técnica →IPB107N20N3GATMA1
✅ Drop-In✓ Em estoque
$1.18 / unidade
Ver ficha técnica →BSC054N04NSGATMA1
✅ Drop-In✓ Em estoque
$0.42 / unidade
Ver ficha técnica →IPB020NE7N3GATMA1 Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Part Number | IPB020NE7N3GATMA1 |
| Technology | OptiMOS 3 N-Channel Power MOSFET |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 75 V |
| Continuous Drain Current (ID) at Tc | 120 A |
| Power Dissipation (PD) at Tc | 300 W |
| On-State Resistance RDS(on) | 2.0 mΩ typical (per part number code) |
| Encapsulamento | PG-TO263-3 (D²PAK, TO-263AB) |
| Tipo de montagem | Surface Mount |
| Configuration | Single |
| Faixa de temperatura de operação | -55C to +175C (junction) |
| Status RoHS | Compliant |
| Lead-Free | Yes |
| Avalanche Rated | Yes (per OptiMOS 3 family datasheet) |
Configuração de pinos do IPB020NE7N3GATMA1
| Pino 1 | Gate — Gate drive input (VGS) |
| Pino 2 | Drain — Drain connection (also electrically tied to the metal tab) |
| Pino 3 | Source — Source connection |
Área de Operação Segura (DC, Tc=25C)
Aplicações típicas
IPB020NE7N3GATMA1 é adequado para 7 aplicaçãos: 48V Telecom DC-DC Synchronous Rectification, Battery Pack Load Switch / Protection, BLDC Motor Drive H-Bridge (Low-Side), Hot-Swap / OR-ing Controller, Industrial Solenoid / Actuator Driver, Solar Inverter / MPPT Power Stage, Power Tool Inverter (Cordless 18V/36V).
48V Telecom DC-DC Synchronous Rectification
The IPB020NE7N3GATMA1's 2.0 mΩ RDS(on) at VGS=10V and 75V VDS rating suit it as a low-side synchronous rectifier in 48V-input telecom and server DC-DC converters. At 100A output current, conduction loss is roughly 20W per FET (I²·R), and the OptiMOS 3 process provides low reverse-recovery charge for high-efficiency operation. Place the FET between the phase-node and ground, drive the gate with a 10V bootstrap or gate-driver IC, and use Kelvin-source connection if available. Compared to IGBTs, the MOSFET switching at 100kHz+ cuts switching loss dramatically in 48V VRM designs.
Recomendado
Battery Pack Load Switch / Protection
With 120A continuous current rating and 75V VDS, the IPB020NE7N3GATMA1 serves as a high-current load switch in 12S Li-ion (~50V) and larger battery packs for power tools, e-bikes, and light EVs. The 2.0 mΩ RDS(on) keeps full-load voltage drop under 250 mV at 120A, preserving usable battery capacity. Use it on the low-side with a dedicated gate driver for inrush control and short-circuit protection. The exposed D²PAK tab also functions as the heatsink interface for the 300W power-dissipation capability. Add a TVS across drain-source to clamp inductive kickback.
Recomendado
BLDC Motor Drive H-Bridge (Low-Side)
The IPB020NE7N3GATMA1 is well-matched to low-side positions in a 48V three-phase BLDC motor drive for industrial pumps, fans, and small e-mobility. Its low RDS(on) minimizes heat generation during the PWM low-side conduction phase, while the 75V rating tolerates regenerative voltage spikes from the motor inductance. Pair each low-side FET with a complementary high-side part from the same family for matched switching. Switching frequency of 20-50 kHz is typical, balancing switching loss against audible noise.
Recomendado
Hot-Swap / OR-ing Controller
In -48V telecom redundant power systems and server 12V OR-ing applications, the IPB020NE7N3GATMA1 can act as the main pass-FET handling 100A+ inrush during hot-swap events. Its 2.0 mΩ RDS(on) keeps steady-state loss under 20W at full load, and the avalanche rating provides headroom for short-circuit transients before the protection controller turns the FET off. The D²PAK package's low thermal resistance supports continuous operation in rack-mounted equipment with forced-air cooling.
Recomendado
Industrial Solenoid / Actuator Driver
The 120A ID and 75V VDS ratings enable the IPB020NE7N3GATMA1 to drive large industrial solenoids, contactors, and hydraulic valves directly from a 24V or 48V bus. The ultra-low RDS(on) reduces steady-state heating when the solenoid is held open for extended periods, extending duty-cycle capability. Use a flyback diode or TVS across the solenoid to dissipate inductive kickback energy. The device's avalanche rating helps absorb some of this energy if the protection component fails.
Recomendado
Solar Inverter / MPPT Power Stage
In solar MPPT boost converters and string-inverter power stages handling 40-60V DC input and several kilowatts of power, the IPB020NE7N3GATMA1's combination of low RDS(on) and 75V rating supports high-efficiency switching at 50-100 kHz. Its OptiMOS 3 process offers fast switching with low reverse-recovery charge, reducing turn-on losses in the boost-diode replacement role. Pair with a microcontroller-based MPPT controller for peak-power tracking. The D²PAK package simplifies thermal integration onto aluminum heat-spreader substrates.
Recomendado
Power Tool Inverter (Cordless 18V/36V)
Cordless power-tool inverters converting 18V or 36V battery stacks to 3-phase AC for brushless motor drives benefit from the IPB020NE7N3GATMA1's 120A current handling and 2.0 mΩ RDS(on). The 75V rating comfortably covers the regenerative spike from 36V battery stacks, and the D²PAK package is rugged enough for high-vibration tool environments when properly mounted. Use the FET in the inverter bridge with a gate-driver such as IR2011SPBF for 50kHz PWM operation.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IPB020NE7N3GATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | BSC036NE7NS3GATMA1 | BSC042NE7NS3GATMA1 | IPB072N15N3GATMA1 | IPB107N20N3GATMA1 | BSC054N04NSGATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO263-3 (D²PAK) | PG-TO263-3 (D²PAK) | PG-TO263-3 (D²PAK) | PG-TO263-3 (D²PAK) | PG-TO263-3 (D²PAK) | PG-TO263-3 (D²PAK) |
| Drain-Source Voltage VDS | 75 V | 75 V | 75 V | 150 V | 200 V | 40 V |
| Continuous Drain Current ID | 120 A | 100 A | 100 A | 100 A | 100 A | 100 A |
| RDS(on) at VGS=10V (typical) | 2.0 mΩ | 3.6 mΩ | 4.2 mΩ | 7.2 mΩ | 10.7 mΩ | 5.4 mΩ |
| Technology | OptiMOS 3 | OptiMOS 5 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Power Dissipation PD | 300 W | 250 W | 250 W | 300 W | 300 W | 250 W |
| RoHS Compliant | Yes | Yes | Yes | Yes | Yes | Yes |
Principais diferenciais
- Ultra-low 2.0 mΩ RDS(on) in D²PAK package (vs BSC042NE7NS3GATMA1)
- Higher 120A current rating vs newer OptiMOS 5 (vs BSC036NE7NS3GATMA1)
- 75V rating optimized for 48V telecom / 36V tool battery systems (vs BSC054N04NSGATMA1 (40V))
Notas de projeto
Estimated: At 50A continuous load and 75V→12V buck-converter low-side position, the IPB020NE7N3GATMA1 dissipates roughly P = I²·R = 50²·0.002 = 5W. The PG-TO263-3 D²PAK on a 1 sq-in copper pour has theta_JA of approximately 40 C/W, producing a 200C junction temperature rise above ambient - well beyond the 175C rating. A heatsink or forced-air cooling is essential for any application above ~3W steady-state dissipation. Use thermal vias under the tab to spread heat to inner copper layers.
Solder the D²PAK tab to a copper pour of at least 1 square inch (645 mm²) per ampere of continuous current to maintain junction temperature. Use an array of thermal vias (typically 12-25 vias of 0.3mm diameter) under the tab to conduct heat to the opposite-side copper layer or internal planes. The gate-drive trace should be kept short (under 25mm) and routed away from the switching node to minimize gate-loop inductance, which causes ringing and possible MOSFET damage.
Do not drive the gate below the full enhancement voltage of 10V - at VGS=4.5V the RDS(on) of the IPB020NE7N3GATMA1 rises dramatically, causing excessive conduction loss and thermal failure. Do not exceed the avalanche energy rating during unclamped inductive switching events - add a TVS or freewheeling diode across inductive loads. The 120A ID rating is at Tc=25C only; derate to ~80A at Tc=100C using the datasheet's thermal-derating curve.
Informações de conformidade
RoHS compliant and lead-free per Infineon product page. Not AEC-Q100 qualified (this is a non-automotive-grade part).
