IPD60R600C6ATMA1 - 600V 600mΩ CoolMOS C6 N-MOSFET | Infineon
N.º da peça: IPD60R600C6ATMA1 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.28 | $128,00 |
| 500 | $1.05 | $525,00 |
| 1.000 | $0.92 | $920,00 |
IPD60R600C6ATMA1 Visão geral
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently switch or amplify power in electronic circuits. The CoolMOS C6 family is a superjunction (SJ) MOSFET generation that combines ultra-low area-specific on-resistance with fast switching speed and ease of use, representing the evolutionary successor to standard high-voltage MOSFETs and a key member of the broader power-MOSFET -> discrete semiconductor -> electronic component taxonomy.
Key specifications include 600 V drain-source breakdown voltage (V(BR)DSS), 600 mΩ maximum RDS(on) at VGS = 10 V, 7.3 A continuous drain current at 25 °C case temperature, and 63 W maximum power dissipation. The part uses an industry-standard TO-252 (DPAK) land pattern that is mechanically and thermally compatible with second-source DPAK MOSFETs, simplifying PCB layout reuse.
The CoolMOS C6 superjunction architecture reduces both conduction losses (low RDS(on) per unit area) and switching losses (low Qgd and low Qrr), enabling higher switching frequencies and higher power density in SMPS, PFC, and lighting applications compared with conventional high-voltage MOSFETs. The intrinsic fast-body-diode behavior makes C6 parts particularly suited to hard-switched bridge topologies where diode reverse recovery is critical.
Typical applications include switched-mode power supplies (SMPS), power factor correction (PFC) boost stages, electronic ballasts and LED lighting drivers, DC-DC converters, and motor-control inverter bridges operating from rectified 110/230 V AC mains. The 600 V drain rating provides ample derating margin on universal-input supplies (rectified 110 V yields ~155 V DC; rectified 230 V yields ~325 V DC). The DPAK package suits through-hole-reflow-compatible designs.
When designing with this device, gate-drive voltage must reach 10 V (typical) to achieve the rated RDS(on); logic-level gate drive is not sufficient. Continuous drain current is thermally limited, and PCB copper area under the DPAK tab must be sized for the application's steady-state dissipation (per the datasheet thermal resistance). For high-side switches, verify that the gate driver can withstand the C6 VGS rating.
This page synthesizes distributor stock, pricing, drop-in DPAK alternatives, and practical design notes not consolidated in the Infineon datasheet, providing a single-page engineering reference for sourcing and selection.
Alternativas drop-in para IPD60R600C6ATMA1 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IPD60R600C6ATMA1 (mesmo formato e footprint) — diferindo em Technology, Package, Drain-Source Voltage (VDS), Mounting Type, MSL Level.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IPD60R600C6BTMA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IPD60R750E6ATMA1
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IPD65R380E6ATMA1
✅ Drop-In✓ Em estoque
$0.65 / unidade
Ver ficha técnica →IPD80R600P7ATMA1
✅ Drop-In✓ Em estoque
$0.92 / unidade
Ver ficha técnica →NDD60N550U1T4G
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
STD7N60DM2
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IPD60R600C6ATMA1 Classificações máximas e características elétricas
| Manufacturer | Infineon Technologies |
| Series | CoolMOS C6 |
| Part Suffix | ATMA1 (Tape & Reel) |
| Tipo de transistor | N-Channel MOSFET |
| Technology | CoolMOS C6 (Superjunction) |
| Drain-Source Voltage (VDS) | 600 V |
| Gate-Source Voltage (VGS) Max | ±20 V |
| Continuous Drain Current (ID) at TC=25°C | 7.3 A |
| On-Resistance RDS(on) Max at VGS=10V | 600 mΩ |
| Total Power Dissipation (Ptot) at TC=25°C | 63 W |
| Faixa de temperatura de operação | -55 °C to +150 °C |
| Encapsulamento | PG-TO252-3 (DPAK) |
| Tipo de montagem | Surface Mount |
| Número de pinos | 3 (Gate, Drain, Source) |
| Status RoHS | Compliant |
| Nível MSL | 1 |
Configuração de pinos do IPD60R600C6ATMA1
| Pino 1 | Gate (G) — Gate drive input; apply 10 V typical VGS for full enhancement |
| Pino 2 | Drain (D) — Drain connection (also bonded to metal tab on back of package); high-voltage switching node |
| Pino 3 | Source (S) — Source connection; reference for gate drive and Kelvin return |
Área de Operação Segura (SOA) - DC
Aplicações típicas
IPD60R600C6ATMA1 é adequado para 6 aplicaçãos: Switched-Mode Power Supplies (SMPS), Power Factor Correction (PFC) Boost Stages, LED Lighting Drivers, Electronic Ballasts, DC-DC Converters, Motor-Control Inverter Bridges.
Switched-Mode Power Supplies (SMPS)
The IPD60R600C6ATMA1 is well suited as the main switching element in universal-input SMPS topologies because its 600 V drain rating covers the worst-case 230 V AC rectified bus (~325 V DC) with comfortable derating margin. The 600 mΩ RDS(on) and 7.3 A continuous current deliver acceptable conduction loss for sub-100 W flyback and forward converters driving consumer electronics and adapters. CoolMOS C6's low Qgd and Qrr also reduce switching loss, enabling higher frequency operation and smaller magnetics.
Recomendado
Power Factor Correction (PFC) Boost Stages
In continuous-conduction-mode PFC boost converters operating from the rectified 110-230 V AC mains, the IPD60R600C6ATMA1's 600 V VDS withstands the boost output voltage (typically 400 V DC) plus inductive transient ringing. Its 7.3 A continuous current suits 100-300 W PFC stages, while the low RDS(on) of 600 mΩ keeps conduction loss low across the AC line cycle. Compared with conventional MOSFETs, CoolMOS C6's fast body-diode behavior reduces reverse-recovery loss in the bridge rectifier interaction.
Recomendado
LED Lighting Drivers
For commercial and industrial LED lighting drivers operating from AC mains, the IPD60R600C6ATMA1 provides the 600 V blocking voltage required by single-stage PFC + flyback topologies in the 10-50 W driver class. The DPAK surface-mount package enables compact driver PCBs that fit inside luminaire housings, while 600 mΩ RDS(on) balances conduction loss against cost. CoolMOS C6's low gate charge reduces driver losses and allows use of small, low-cost gate-driver ICs.
Recomendado
Electronic Ballasts
The IPD60R600C6ATMA1 is a proven switch for fluorescent and HID electronic ballasts, where it drives the resonant LC tank that ignites and regulates the lamp. CoolMOS C6's fast switching and low Qrr reduce tank losses, improving ballast efficiency and extending lamp life. The 600 V VDS handles the resonant overshoot above the rectified mains bus, and the DPAK package withstands the in-fixture thermal environment of enclosed luminaires.
Recomendado
DC-DC Converters
In 48 V telecom or industrial DC-DC converters, the IPD60R600C6ATMA1 can serve as the primary-side switch in isolated topologies fed from a 48 V nominal bus (which can rise above 60 V under transient conditions). Its 600 V VDS provides more than adequate headroom on the low-voltage bus, and the 7.3 A / 600 mΩ ratings suit converters in the 100-200 W range. The DPAK's thermal pad enables direct PCB-copper heatsinking without external heatsinks.
Recomendado
Motor-Control Inverter Bridges
For low-voltage (24-48 V) brushless-DC and permanent-magnet motor inverter half-bridges, the IPD60R600C6ATMA1 provides comfortable VDS headroom (600 V vs. <48 V bus) at a competitive price point for cost-sensitive appliance and industrial-drive applications. The 7.3 A continuous current suits fractional-HP motors, while the DPAK package simplifies PCB layout in three-phase bridge configurations. For higher-current motors, derate to stay within SOA during hard-switching transients.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IPD60R600C6ATMA1 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IPD60R600C6BTMA1 | IPD60R750E6ATMA1 | IPD65R380E6ATMA1 | IPD80R600P7ATMA1 | NDD60N550U1T4G | STD7N60DM2 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi | STMicroelectronics |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | DPAK (TO-252-3) | DPAK (TO-252-3) |
| Drain-Source Voltage (VDS) | 600 V | 600 V | 600 V | 650 V | 800 V | 600 V | 600 V |
| RDS(on) Max at VGS=10V | 600 mΩ | 600 mΩ | 750 mΩ | 380 mΩ | 600 mΩ | 550 mΩ | 950 mΩ |
| Technology / Generation | CoolMOS C6 (Superjunction) | CoolMOS C6 (Superjunction) | CoolMOS E6 (Superjunction) | CoolMOS E6 (Superjunction) | CoolMOS P7 (Superjunction) | onsemi N-channel MOSFET | MDmesh DM2 (Superjunction) |
| Pin Configuration | G-D-S (Pin 1: Gate, Pin 2: Drain/tab, Pin 3: Source) | G-D-S (identical) | G-D-S (identical) | G-D-S (identical) | G-D-S (identical) | G-D-S (standard DPAK) | G-D-S (standard DPAK) |
Principais diferenciais
- CoolMOS C6 superjunction architecture delivers low specific on-resistance in 600 V class (vs Conventional 600 V planar MOSFETs)
- Industry-standard DPAK footprint enables drop-in cross-brand sourcing (vs Proprietary high-voltage packages)
- 600 V drain rating provides ample headroom on universal-input mains (vs 500 V MOSFETs)
Notas de projeto
The DPAK's 63 W power-dissipation rating is measured at TC = 25 °C with infinite heatsink; in real PCB designs the dissipation limit is set by the thermal resistance from junction to ambient (θJA), which is dominated by the copper area under the package tab. Estimated: at θJA = 50 °C/W (typical 1 oz copper, ~1 sq inch copper pour), continuous dissipation above ~1.5 W will push the junction above 150 °C and force derating. For high-current applications, maximize copper area under the tab and use multiple thermal vias to inner copper planes.
Layout the DPAK tab as a single contiguous copper pour tied to the drain node, with no signal traces crossing beneath the package body to avoid capacitive coupling into the high-voltage switching node. Place the gate-drive loop (gate-driver output, gate resistor, and gate-source return) as physically small as possible - typical target is <20 mm total loop length - to suppress ringing and reduce dv/dt-induced turn-on. A 10-100 Ω gate resistor dampens the gate-loop resonance.
CoolMOS C6 requires a gate-drive voltage of 10 V to achieve the datasheet 600 mΩ RDS(on); logic-level (5 V) drive can leave the MOSFET in the linear region, causing excessive conduction loss and thermal runaway. The VGS rating is ±20 V - exceeding this, even briefly during ESD or driver mis-wiring, can rupture the gate oxide. Do not use the same gate resistor for both high-side and low-side switches in a half-bridge; each switch needs its own return path to its own source to avoid crosstalk-induced spurious turn-on.
For PFC boost converters using the IPD60R600C6ATMA1, keep the boost diode and output capacitor return loop tight to the MOSFET source to minimize the high-frequency switching loop. The drain-node copper pour carries the full rectified mains (up to 325 V DC plus ringing) - keep this pour away from low-voltage analog and signal traces by at least 3 mm of clearance, and use slotting or cut-outs in the pour to control creepage distance at the board edge.
Informações de conformidade
RoHS and REACH compliant per Infineon product page. MSL Level 1 per JEDEC J-STD-020. Not AEC-Q100 qualified; for automotive designs use Infineon IPD60R600C6 automotive-grade equivalents.
