IR2010SPBF - 200V Half-Bridge Gate Driver 3A | Infineon
N.º da peça: IR2010SPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.1 | $210,00 |
| 500 | $1.75 | $875,00 |
| 1.000 | $1.45 | $1.450,00 |
| 2.500 | $1.2 | $3.000,00 |
IR2010SPBF Visão geral
A half-bridge gate driver is a specialized power-management IC that produces two synchronized gate-drive signals - one referenced to the high-side floating supply and one referenced to ground - to alternately switch the upper and lower switches of a half-bridge power stage. Gate drivers sit hierarchically below power MOSFETs/IGBTs in the power-converter signal chain, between low-power control logic (microcontroller, PWM controller) and the high-current switching devices. They provide level shifting, bootstrap drive for the high-side switch, and strong gate drive to minimize switching losses.
The IR2010SPBF features high pulse-current buffer stages designed for minimum driver cross-conduction, a typical 95 ns propagation delay matched between high and low channels, and built-in shutdown logic. With 200 V maximum offset voltage and 3 A peak gate-drive capability, it supports switching frequencies well into the audio Class D and DC-DC converter application space. The floating channel operates up to 200 V and is designed for bootstrap operation.
Typical applications include audio Class D amplifiers, DC-DC converters, motor drives for small brushless DC motors, and half-bridge / full-bridge power stages in industrial controls. The wide 10 V to 20 V supply range (VCC for low side, VB-VS for high side) and matched delays make it suitable for high-fidelity audio amplification and switched-mode power supplies. When designing with this part, select the bootstrap capacitor carefully (typically 0.1 uF to 1 uF ceramic) to ensure the high-side supply is refreshed each switching cycle, and respect the absolute maximum VS offset of 200 V. This page synthesizes distributor pricing, drop-in alternatives, and design notes not assembled in the manufacturer datasheet alone.
Alternativas drop-in para IR2010SPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IR2010SPBF (mesmo formato e footprint) — diferindo em Package, Logic Input Compatibility, RoHS Status, Configuration, Technology.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IR2010PBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IR2109SPBF
✅ Drop-In✓ Em estoque
$1.05 / unidade
Ver ficha técnica →IR2110SPBF
✅ Drop-In✓ Em estoque
$1.98 / unidade
Ver ficha técnica →IR2304SPBF
✅ Drop-In✓ Em estoque
$0.48 / unidade
Ver ficha técnica →IR2128SPBF
✅ Drop-In✓ Em estoque
$1.62 / unidade
Ver ficha técnica →IR2010SPBF Classificações máximas e características elétricas
| Configuration | Half-Bridge (high + low side) |
| Number of Drivers | 2 (independent high/low-side outputs) |
| Offset Voltage (max) | 200 V |
| Peak Source/Sink Current | 3 A / 3 A |
| Logic Input Compatibility | CMOS or LSTTL, down to 3.0 V |
| Propagation Delay (typ) | 95 ns |
| VCC Supply Voltage (low side) | 10 V to 20 V |
| VB Bootstrap Supply (high side) | VCC + 10 V to VCC + 20 V |
| Temperatura de operação | -40C to +150C |
| Shutdown Feature | Yes (active input) |
| Encapsulamento | 16-SOIC (SOIC-16) |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant (Pb-free PBF suffix) |
| Drive Technology | High-speed power MOSFET / IGBT driver |
| Channel Matching | Matched propagation delays for cross-conduction minimization |
Configuração de pinos do IR2010SPBF
| Pino 1 | VCC — Low-side supply voltage (10V-20V) |
| Pino 2 | HIN — Logic input for high-side output (CMOS/LSTTL, 3V logic) |
| Pino 3 | LIN — Logic input for low-side output (CMOS/LSTTL, 3V logic) |
| Pino 4 | SD — Shutdown logic input (active) |
| Pino 5 | GND — Logic and low-side ground reference |
| Pino 6 | LO — Low-side gate drive output |
| Pino 7 | VS — High-side floating supply return / switch node |
| Pino 8 | HO — High-side gate drive output |
| Pino 9 | VB — High-side floating bootstrap supply |
| Pino 10 | NC — Not connected (per datasheet) |
| Pino 11 | NC — Not connected (per datasheet) |
| Pino 12 | NC — Not connected (per datasheet) |
| Pino 13 | NC — Not connected (per datasheet) |
| Pino 14 | NC — Not connected (per datasheet) |
| Pino 15 | NC — Not connected (per datasheet) |
| Pino 16 | VCC — Low-side supply (pin tied to pin 1 internally in some versions) |
Aplicações típicas
IR2010SPBF é adequado para 7 aplicaçãos: Audio Class D Amplifier Half-Bridge Stage, DC-DC Converter Half-Bridge Power Stage, Brushless DC Motor Drive Half-Bridge, Electronic Ballast for HID Lighting, Solar Micro-Inverter Power Stage, Industrial Switched-Mode Power Supply (SMPS), Telecom 48V Hot-Swap Half-Bridge.
Audio Class D Amplifier Half-Bridge Stage
The IR2010SPBF's 200 V offset rating and 3 A peak gate drive current make it well-suited for audio Class D amplifier half-bridge output stages driving medium-power MOSFETs. The 95 ns matched propagation delay between high- and low-side channels minimizes dead-time distortion, which is critical for THD performance in audio applications. Designers typically operate the part at switching frequencies of 250 kHz to 500 kHz with a bootstrap capacitor of 0.47 uF to 1 uF to refresh the high-side supply. The shutdown pin can be used for overcurrent or thermal protection, enabling robust amplifier fault management.
Recomendado
DC-DC Converter Half-Bridge Power Stage
In DC-DC converter half-bridge topologies such as the half-bridge LLC and full-bridge converters, the IR2010SPBF provides the level shifting and gate drive needed to switch the primary-side MOSFETs at high frequency. The 200 V offset rating comfortably covers 48 V telecom and industrial bus voltages with adequate transient margin. With 3 A peak drive, the part can switch MOSFETs with substantial gate charge (e.g., 50 nC to 100 nC Qg) at frequencies up to several hundred kHz. Designers should size the bootstrap capacitor based on the high-side quiescent current and switching frequency to prevent VS undershoot.
Recomendado
Brushless DC Motor Drive Half-Bridge
For small brushless DC (BLDC) motor drives up to a few hundred watts, the IR2010SPBF can drive each of the three half-bridge phases in the inverter stage. The 200 V rating supports 48 V and 60 V motor bus voltages, while the matched 95 ns propagation delays ensure symmetric switching and reduced circulating currents. The shutdown pin enables fast overcurrent protection in conjunction with a current-sense comparator. At 3 A peak drive, the part can switch medium-current MOSFETs in the 30 V to 100 V range for industrial automation and small appliance motor control.
Recomendado
Electronic Ballast for HID Lighting
The IR2010SPBF can drive the resonant half-bridge in electronic ballasts for high-intensity discharge (HID) lamps and fluorescent lighting. The 200 V offset rating covers typical lamp bus voltages with margin for resonant voltage spikes. With 3 A peak gate drive and 95 ns propagation delay, the part enables the high-frequency (40 kHz to 100 kHz) operation needed for efficient lamp starting and steady-state drive. Designers typically use the shutdown feature for lamp-out and over-temperature protection.
Recomendado
Solar Micro-Inverter Power Stage
In small solar micro-inverter designs up to a few hundred watts, the IR2010SPBF can drive the primary-side MOSFETs of a high-frequency DC-DC stage feeding a 60 Hz DC-AC inversion. The 200 V rating supports typical 24 V to 48 V photovoltaic panel voltages with sufficient headroom. The matched propagation delays ensure precise switching timing for maximum power point tracking (MPPT) accuracy. Designers should add adequate heatsinking or copper area on the SOIC-16 PCB footprint for thermal management under continuous solar exposure.
Recomendado
Industrial Switched-Mode Power Supply (SMPS)
For industrial switched-mode power supplies, the IR2010SPBF drives the half-bridge primary stage in isolated topologies such as half-bridge converters and full-bridge converters. The 200 V offset covers 48 V telecom rails, 72 V industrial bus systems, and battery-powered applications with margin for voltage transients. The 3 A peak gate drive supports MOSFETs with Qg up to 100 nC at switching frequencies of 100 kHz to 500 kHz, while the integrated shutdown pin simplifies fault management and complies with industrial safety requirements.
Recomendado
Telecom 48V Hot-Swap Half-Bridge
The IR2010SPBF can drive OR-ing FETs and hot-swap MOSFETs in 48 V telecom systems where the 200 V offset rating provides substantial margin above the nominal 48 V bus. The matched propagation delay ensures synchronized turn-on and turn-off of parallel MOSFETs to prevent circulating currents. With 3 A peak drive, the part can switch large gate-charge OR-ing MOSFETs used for redundant power path management. Designers should place the bootstrap capacitor and VCC bypass capacitor close to the IC pins for stable operation.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IR2010SPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IR2010PBF | IR2109SPBF | IR2110SPBF | IR2304SPBF | IR2128SPBF |
|---|---|---|---|---|---|---|
| Package | 16-SOIC | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same | 16-SOIC - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Offset Voltage (max) | 200 V | 200 V | 200 V | 500 V | 600 V | 500 V |
| Peak Source/Sink Current | 3 A / 3 A | 3 A / 3 A | 3 A / 3 A | 2 A / 2 A | 2 A / 2 A | 2 A / 2 A |
| Propagation Delay (typ) | 95 ns | 95 ns | 75 ns | 120 ns | 130 ns | 200 ns |
| Shutdown Pin | Yes | No | Yes | Yes | Yes (with adaptive dead-time) | Yes |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 12 V to 20 V |
| Logic Input Compatibility | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.0 V | CMOS/LSTTL down to 3.3 V |
Principais diferenciais
- Lower cost half-bridge driver in same SOIC-16 footprint (vs IR2110SPBF)
- 200V/3A specification optimized for Class D audio (vs IR2304SPBF)
- Integrated shutdown pin for fault protection (vs IR2010PBF)
Notas de projeto
Bootstrap capacitor sizing is critical for reliable IR2010SPBF operation. The bootstrap capacitor (between VB and VS) must supply the high-side quiescent current and gate charge for each switching cycle. For typical applications, select a 0.1 uF to 1 uF ceramic capacitor with low ESR. Estimate the minimum value using C_boot >= Q_g_total / Delta_V, where Delta_V is the allowable bootstrap voltage droop (typically 0.5 V to 1 V). An undersized bootstrap capacitor causes high-side UVLO tripping and loss of gate drive.
Place the VCC bypass capacitor (typically 0.1 uF ceramic in parallel with 10 uF electrolytic) as close as possible to the VCC pin (pin 1) and GND (pin 5). The bootstrap capacitor should be placed near pins VB and VS to minimize parasitic inductance. According to the Infineon datasheet, a 1 oz copper pour on the SOIC-16 thermal pad area is recommended for thermal dissipation. Keep high-current switching loops (LO to GND and HO to VS) short to minimize ringing and EMI.
Estimated: at 500 kHz switching frequency with 30 nC Qg MOSFETs, the IR2010SPBF draws approximately 30 mA average quiescent current. With 15 V VCC supply and a SOIC-16 thermal resistance of approximately 100 C/W theta_JA on a 1 oz copper pour, the part dissipates around 0.45 W at full switching activity, resulting in a 45C junction temperature rise above ambient. The IR2010SPBF is rated up to 150C junction temperature, leaving adequate thermal margin in typical designs. Use larger copper pours for high-frequency applications.
Do not exceed 200 V between the high-side floating supply (VB) and switch node (VS) - this is the absolute maximum offset voltage. According to the Infineon datasheet, exceeding this rating permanently damages the level-shifting circuitry. Also, ensure that VS does not go below ground by more than the specified negative transient rating, otherwise use a clamp diode or Zener across VS to GND. Finally, respect the minimum VCC voltage of 10 V - operating below this threshold causes UVLO and erratic gate drive behavior.
Keep logic input traces (HIN, LIN, SD) short and away from switching nodes to avoid noise coupling. According to Infineon datasheet layout guidelines, place a small gate resistor (typically 10 ohm to 47 ohm) between the LO/HO outputs and the power MOSFET gates to dampen ringing. Use a Kelvin connection for the low-side gate return (GND) to minimize source inductance effects. For multi-layer boards, dedicate one inner layer as a continuous ground plane directly under the driver for low-impedance return paths.
Informações de conformidade
Pb-free PBF suffix confirms RoHS compliance per Infineon product page. Not AEC-Q100 qualified - automotive applications should use AEC-Q100 qualified variants if available. Halogen-free status not explicitly stated in verified data.
