IRFS3006TRLPBF - 60V 270A N-Channel HEXFET MOSFET | Infineon
N.º da peça: IRFS3006TRLPBF ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $2.85 | $2,85 |
| 10 | $2.55 | $25,50 |
| 100 | $2.15 | $215,00 |
| 500 | $1.85 | $925,00 |
| 1.000 | $1.6 | $1.600,00 |
| 3.000 | $1.4 | $4.200,00 |
IRFS3006TRLPBF Visão geral
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor device used for switching and amplifying electronic signals in power conversion circuits. Within the broader power-electronics hierarchy, MOSFETs sit alongside IGBTs as the primary switching elements in DC-DC converters, motor drives, and synchronous rectification stages. The N-channel variant - the most common in power applications - requires a positive gate drive and offers the lowest per-area on-resistance because electrons carry the current. HEXFET is Infineon's brand name for its planar-cell MOSFET technology, which trades the absolute lowest Rds(on) of latest-generation TrenchFET parts for superior avalanche ruggedness and easier paralleling.
Key performance specifications include 60 V drain-source breakdown voltage (Vds), 195 A continuous drain current at Tc=25 C (375 W package dissipation), 270 A pulsed rating per Infineon's product family datasheet, 2.5 mOhm maximum Rds(on) at Vgs=10 V, and a gate-source threshold of 2.0 V to 4.0 V. The D2PAK surface-mount package features a low thermal resistance of approximately 0.4 C/W junction-to-case, supporting high dissipation on a PCB with adequate copper area.
The device uses a vertical DMOS structure with a hexagonal cell layout that distributes current uniformly across the die, reducing hot-spot formation during hard switching transients. The avalanche-rated design supports unclamped inductive switching events commonly encountered in motor and solenoid drive applications. Gate charge is specified at 200 nC typical (Qg) and gate-to-drain charge (Qgd) is approximately 80 nC, balancing switching speed against EMI and drive loss.
Typical applications include high-current synchronous rectification in 48 V telecom and server bus converters, brushless DC motor drive stages in industrial automation, electric power steering and electronic throttle control in automotive systems, OR-ing FETs in redundant power supplies, hot-swap circuits on high-current distribution boards, and inverter stages in solar micro-inverters and battery management. Its 60 V rating makes it well suited to 12 V/24 V/48 V bus architectures where headroom above the rail is required.
When designing with the IRFS3006TRLPBF, careful attention must be paid to PCB layout and thermal management. The D2PAK tab is electrically connected to the drain; copper area on the PCB acts as the heatsink. At 195 A continuous current, the device dissipates I^2 * Rds(on) = 95 W at full load with Rds(on) at temperature, so a minimum 6 square inches of 2 oz copper or an external heatsink is required to keep the junction below 150 C. A low-inductance gate-drive loop and a gate-source resistor of 10 to 100 ohm are recommended to prevent parasitic oscillation.
This page consolidates distributor pricing, parametric drop-in alternatives, and application design notes that go beyond the manufacturer datasheet, helping engineers select, source, and qualify this part for demanding high-current power designs.
Alternativas drop-in para IRFS3006TRLPBF — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRFS3006TRLPBF (mesmo formato e footprint) — diferindo em Package, Technology, Mounting Type, Drain-Source Voltage (VDS), FET Type.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRFS3006PBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFS3006-7PPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFB3207ZPBF
✅ Drop-In✓ Em estoque
$1.62 / unidade
Ver ficha técnica →VBL1602
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRF7854TRPBF
✅ Drop-In✓ Em estoque
$0.48 / unidade
Ver ficha técnica →IRFS3006TRLPBF Classificações máximas e características elétricas
| FET Type | N-Channel |
| Technology | IR HEXFET (Planar DMOS) |
| Drain-Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Id) at Tc=25C | 195 A |
| Pulsed Drain Current (Idm) | 270 A |
| On-Resistance Rds(on) max at Vgs=10V | 2.5 mOhm |
| Gate-Source Threshold Vgs(th) | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | 200 nC |
| Power Dissipation (Pd) at Tc=25C | 375 W |
| Temperatura de junção de operação | -55 C to +175 C |
| Encapsulamento | D2PAK (TO-263AB), surface mount |
| Tipo de montagem | Surface Mount |
| RoHS Compliance | Lead-Free (Pb-Free), RoHS Compliant |
| Nível MSL | 1 |
| Avalanche Energy Rating | Avalanche rated (per Infineon datasheet) |
Configuração de pinos do IRFS3006TRLPBF
| Pino 1 | Gate — Gate drive input; controls drain-source conduction |
| Pino 2 | Drain — Drain terminal; electrically connected to the metal tab on the back of the package |
| Pino 3 | Source — Source terminal; common reference for gate drive |
| Pino TAB | Drain — Metal mounting tab electrically tied to Drain (pin 2); provides thermal dissipation path and main current connection on PCB |
Área de Operação Segura (SOA) - IRFS3006TRLPBF
Aplicações típicas
IRFS3006TRLPBF é adequado para 6 aplicaçãos: 48V Synchronous Rectification in Telecom DC-DC Converters, Brushless DC Motor Drive in Industrial Automation, Automotive High-Current Load Switch (12V/24V Systems), OR-ing FET in Redundant Server Power Supplies, Solar Micro-Inverter Output Stage, Hot-Swap Circuit on High-Current Distribution Boards.
48V Synchronous Rectification in Telecom DC-DC Converters
The IRFS3006TRLPBF fits 48V telecom bus converters as a synchronous rectifier MOSFET, where its 60V Vds rating provides 25% transient headroom above the nominal 48V rail and handles typical 60-70V spikes from hot-swap events. With 2.5 mOhm Rds(on) at Vgs=10V and 195A continuous drain current, conduction loss at 50-100A output current stays below 5-12W per FET, keeping efficiency above 96% in 48V-to-12V buck stages. The D2PAK package dissipates ~3W per square inch of 2oz copper with no heatsink, allowing compact PCB designs.
Recomendado
Brushless DC Motor Drive in Industrial Automation
The IRFS3006TRLPBF serves as the low-side switching FET in three-phase brushless DC (BLDC) motor drives for industrial automation, where its 270A pulsed rating handles motor stall currents and inrush transients. With 2.5 mOhm Rds(on) and 200nC total gate charge, switching losses at 20-50 kHz PWM frequencies remain manageable while conduction losses stay below 2W at 30A average phase current. The 60V rating suits 24V and 48V industrial bus systems, and the D2PAK package mounts directly to the chassis for enhanced thermal dissipation in factory environments.
Recomendado
Automotive High-Current Load Switch (12V/24V Systems)
The IRFS3006TRLPBF works as a high-current load switch in automotive 12V and 24V body-control applications such as power-seat modules, electronic throttle, and trailer brake controllers. The 60V Vds rating tolerates load-dump transients up to ISO 7637-2 pulse patterns when paired with a TVS clamp. The 2.5 mOhm Rds(on) at 10V Vgs keeps voltage drop below 250mV at 100A continuous load, while the D2PAK package dissipates ~10W across the copper pour. Designers should add gate-source protection for automotive-grade reliability.
Recomendado
OR-ing FET in Redundant Server Power Supplies
The IRFS3006TRLPBF operates as an OR-ing FET in N+1 redundant server power-supply architectures, where two or more 12V or 48V sources share a common load. With 2.5 mOhm Rds(on) at 100A, the forward conduction loss stays around 25W per FET, acceptable for a 1U server chassis with adequate airflow. The 60V Vds rating handles 48V bus transients, and the 270A pulsed rating absorbs the inrush when hot-swapping a supply module. Source-connected Kelvin pins in D2PAK PCB layouts reduce the on-resistance feedback effect.
Recomendado
Solar Micro-Inverter Output Stage
The IRFS3006TRLPBF is used in the output stage of low-power solar micro-inverters (250W-1kW) as a switching element in the DC-AC converter bridge. The 60V Vds rating handles up to 48V battery-bus and inverter-link voltage with margin, while the 2.5 mOhm Rds(on) keeps conduction loss below 1% of output power at typical loads. The 200nC total gate charge supports 50-100 kHz switching frequencies with manageable drive loss. The D2PAK surface-mount package simplifies automated PCB assembly for high-volume inverter manufacturing.
Recomendado
Hot-Swap Circuit on High-Current Distribution Boards
The IRFS3006TRLPBF acts as the inrush-limiting hot-swap FET on 48V telecom and server distribution boards, where its 60V Vds rating handles nominal bus voltage plus transient spikes, and the 270A pulsed rating absorbs capacitor-bank inrush during board insertion. The 2.5 mOhm Rds(on) keeps steady-state loss below 10W at 100A load, allowing continuous operation without forced-air cooling. Gate-charge of 200nC permits the hot-swap controller to ramp Vgs slowly for soft-start, while the D2PAK package provides mechanical robustness for ruggedized equipment.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRFS3006TRLPBF — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRFS3006PBF | IRFS3006-7PPBF | IRFB3207ZPBF | VBL1602 | IRF7854TRPBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi | Infineon |
| Package | D2PAK (TO-263AB) | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same | D2PAK (TO-263AB) - same |
| Drain-Source Voltage Vds | 60 V | 60 V | 60 V | 75 V (+25%) | 60 V | 30 V (-50%) |
| Continuous Drain Current Id | 195 A | 195 A | 195 A | 170 A | 270 A (pulsed) | ~30 A |
| Technology | HEXFET (Planar DMOS) | HEXFET (Planar DMOS) | HEXFET (Planar DMOS) | HEXFET (Planar DMOS) | TrenchFET (Chinese-domestic design) | HEXFET |
Principais diferenciais
- Industry-leading 2.5 mOhm Rds(on) at 60V with HEXFET avalanche ruggedness (vs VBL1602 (VBsemi))
- Wide authorized distributor availability and long-term Infineon product support (vs IRFB3207ZPBF (Infineon, higher voltage))
- Higher continuous current than smaller-packaged alternatives (vs IRF7854TRPBF (Infineon))
Notas de projeto
Estimated: at 100 A continuous load with Rds(on) = 2.5 mOhm at 25 C junction (rises ~2x at 125 C to ~5 mOhm), conduction loss is approximately P = I^2 * R = 100^2 * 0.005 = 50 W. The D2PAK package must dissipate this through its metal tab into PCB copper. Provide a minimum of 6 square inches of 2 oz copper on the drain tab, or mount a heatsink with thermal resistance below 1 C/W, to keep junction temperature below 150 C. Forced-air cooling reduces thermal resistance further in server applications.
The D2PAK metal tab is electrically tied to the drain (pin 2). When designing the PCB land pattern, allocate maximum copper area to the tab for heat spreading. Use thermal vias (0.3mm diameter, 1mm pitch) under the tab to inner-layer copper planes. Avoid placing signal traces under the tab to prevent noise coupling. Maintain 50 mil clearance between the tab and adjacent low-voltage signals unless the tab potential is controlled and safe.
Do not exceed Vgs(max) of +/- 20 V absolute ratings; a 10V gate drive is recommended but a gate-source Zener clamp of 16-18V is recommended for transient protection. Add a 10k-100k ohm gate-source pull-down resistor to ensure the FET stays off during controller power-up or fault conditions. The high 200nC total gate charge requires a gate driver capable of sourcing/sinking at least 1A peak to achieve sub-100ns switching transitions; small PWM controllers cannot drive this FET directly.
Informações de conformidade
Per the Infineon product page, the part is RoHS-compliant lead-free (PBF suffix). Not AEC-Q100 qualified for automotive - consider automotive-grade variants for that application. REACH compliance per Infineon material declarations. Halogen-free status not explicitly listed in the verified web data.
