IRFS3107TRL7PP - 75V 260A 3mOhm N-Channel MOSFET | Infineon
N.º da peça: IRFS3107TRL7PP ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1.35 | $1,35 |
| 10 | $1.25 | $12,50 |
| 100 | $1.1 | $110,00 |
| 500 | $0.98 | $490,00 |
| 1.000 | $0.85 | $850,00 |
IRFS3107TRL7PP Visão geral
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching device used as the active element in DC-DC converters, motor drives, and synchronous rectifiers. The N-channel variant conducts when the gate is pulled high relative to the source. Within the broader taxonomy, this part belongs to MOSFET -> discrete transistor -> power semiconductor. The IRFS3107TRL7PP combines a 75 V drain-source rating with very low RDS(on), positioning it as a high-current mid-voltage switch rather than a high-voltage or low-power logic-level device.
Key features include 75 V VDS max, 3 mOhm RDS(on) max at VGS=10V, 370 W maximum power dissipation at Tc=25C, 195 A continuous drain current at Tc=25C, and a gate charge of 160 nC typical. The D2PAK-7 footprint (6 leads + tab) provides a low thermal resistance path via the exposed drain tab, which is soldered directly to the PCB copper pour for heat extraction. The 7-lead variant adds a sense pin for current monitoring, a feature absent in the standard 3-lead D2PAK.
Internally, the device uses Infineon's proprietary IR HEXFET process, a vertical DMOS structure with a planar cell layout optimized for low conduction loss. The die is rated for avalanche energy and is qualified for hard-switched topologies. The low gate charge enables high-frequency switching at 100-300 kHz, while the low RDS(on) minimizes conduction loss at high duty cycles.
Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), high-speed power switching in motor drives, hard-switched and high-frequency circuits, and battery protection in 48V e-mobility systems. Its current rating makes it attractive for server and telecom DC-DC stages.
When designing with this part, pay attention to PCB layout: the D2PAK tab must be soldered to a sufficiently large copper area (typically >=1 sq inch) to keep junction temperature within SOA. Use a gate driver capable of sourcing/sinking 1-2 A to switch the 160 nC gate charge quickly, otherwise switching losses will dominate at high frequency.
This page consolidates distributor pricing, drop-in alternatives, and practical design notes that supplement the Infineon datasheet to accelerate sourcing and design decisions.
Alternativas drop-in para IRFS3107TRL7PP — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com IRFS3107TRL7PP (mesmo formato e footprint) — diferindo em Package, Technology, FET Type, Operating Temperature Range, RDS(on) Max @ VGS=10V.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
IRFS3006TRL7PP
✅ Drop-In✓ Em estoque
$1.75 / unidade
Ver ficha técnica →IRFS3107-7PPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFS4010TRL7PP
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFS3306TRLPBF
✅ Drop-In✓ Em estoque
$1.12 / unidade
Ver ficha técnica →IRFS7730-7PPBF
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
IRFS3107TRL7PP Classificações máximas e características elétricas
| FET Type | N-Channel MOSFET |
| Technology | IR HEXFET (Planar DMOS) |
| Drain-Source Voltage (VDS) Max | 75 V |
| Continuous Drain Current (ID) @ Tc=25C | 240 A (DigiKey) / 195 A (per package datasheet snippet) |
| RDS(on) Max @ VGS=10V | 3 mOhm (Infineon) / 2.6 mOhm (Mouser) |
| Gate Charge (Qg) Typical | 160 nC |
| Maximum Power Dissition @ Tc=25C | 370 W |
| Faixa de temperatura de operação | -55C to +175C (junction) |
| Encapsulamento | D2PAK-7 (TO-263CB, 6 leads + tab) |
| Tipo de montagem | Surface Mount |
| Status RoHS | Compliant |
| Lead-Free | Yes |
Configuração de pinos do IRFS3107TRL7PP
| Pino 1 | Source — Source terminal (low-side reference) |
| Pino 2 | Source — Source terminal |
| Pino 3 | Source — Source terminal |
| Pino 4 | Gate — Gate drive input |
| Pino 5 | Source Sense — Kelvin source sense pin for gate drive return |
| Pino 6 | Source Sense — Kelvin source sense pin |
| Pino 7 | Source Sense — Kelvin source sense pin |
| Pino TAB | Drain — Drain terminal (also serves as thermal pad and heatsink mounting surface) |
Aplicações típicas
IRFS3107TRL7PP é adequado para 6 aplicaçãos: 48V Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS) Output Stage, High-Current Motor Drive (BLDC/PMSM), Battery Protection and Hot-Swap in 48V Systems, High-Frequency Hard-Switched DC-DC Converter, Solar Inverter and Renewable Energy Power Stage.
48V Synchronous Rectification in SMPS
The IRFS3107TRL7PP is well suited as the low-side synchronous rectifier in 48 V telecom and server DC-DC converters. Its 75 V VDS rating provides ~56% margin above 48 V nominal, while 3 mOhm RDS(on) keeps conduction loss below 1% at 50 A output current (estimated P_cond = I^2 * R = 7.5 W). The D2PAK-7 tab solders directly to the PCB copper pour, achieving junction-to-ambient thermal resistance of approximately 40 C/W with 1 sq inch of 2 oz copper. Compared with using a Schottky diode, the MOSFET rectification cuts conduction loss by a factor of ~3x, improving efficiency by 2-3 percentage points at full load.
Recomendado
Uninterruptible Power Supply (UPS) Output Stage
In online UPS systems, the IRFS3107TRL7PP serves as the high-current switching element in the inverter and battery-charger power stages. Its 240 A continuous rating (DigiKey) supports 5-10 kVA UPS modules, and the 370 W power dissipation rating enables operation at 100 A continuous without active cooling. The 75 V rating covers 48 V battery bus systems with margin. The IR HEXFET process is qualified for hard-switched bridge topologies at 20-50 kHz, where the 160 nC gate charge is easily driven by standard gate driver ICs. Reliability is enhanced by the planar cell structure, which exhibits stable RDS(on) over the part's lifetime.
Recomendado
High-Current Motor Drive (BLDC/PMSM)
For 24-48 V brushless DC and PMSM motor drives in industrial automation, robotics, and e-mobility, the IRFS3107TRL7PP handles phase currents up to 195 A (continuous at Tc=25C per package datasheet) and is rated for the repetitive avalanche events inherent to motor PWM switching. The 75 V rating covers 48 V battery packs with derating margin for back-EMF transients. The D2PAK-7 package with its exposed drain tab enables direct mounting to the motor controller chassis or heatsink, achieving thermal resistance of approximately 0.5 C/W with a 50x50 mm aluminum heatsink. Gate drive at 10V is compatible with most 3-phase driver ICs from Infineon and competitors.
Recomendado
Battery Protection and Hot-Swap in 48V Systems
The IRFS3107TRL7PP functions as a low-RDS(on) disconnect switch in 48 V battery management and hot-swap circuits. Its 3 mOhm on-resistance contributes only 0.3 V drop at 100 A load, minimizing dissipation and voltage sag during hot-plug events. The 75 V VDS rating handles the transients seen during load switching on 48 V buses. The D2PAK-7 footprint simplifies paralleling multiple parts for higher-current applications (e.g., 200 A+) - designers typically parallel 2-3 MOSFETs with source-sense resistors for current balancing. The IR HEXFET process is avalanche-rated, providing ruggedness against the inductive kick from sudden load disconnects.
Recomendado
High-Frequency Hard-Switched DC-DC Converter
For hard-switched buck and boost converters operating at 100-300 kHz, the IRFS3107TRL7PP offers a balance of low RDS(on) (3 mOhm) and manageable gate charge (160 nC). The figure of merit (FOM = RDS(on) * Qg) is approximately 480 mOhm-nC, which is competitive in its voltage class. At 100 kHz switching with 50% duty cycle, switching losses for a single device are roughly 50 W at 100 A load (estimated: E_sw = 0.5 * VDS * ID * (tr+tf)/2 = 0.5 * 75 * 100 * 27ns = 0.1 mJ per transition, * 100KHz = 10W per MOSFET). For higher-frequency applications above 200 kHz, consider the IRFS7730-7PPBF with lower Qg.
Recomendado
Solar Inverter and Renewable Energy Power Stage
In solar micro-inverters and string inverters with battery storage, the IRFS3107TRL7PP serves as the primary switching element in the DC-DC boost stage and battery interface. Its 75 V rating covers 48 V battery banks, while 3 mOhm RDS(on) minimizes loss in continuous-current operation. The IR HEXFET technology is qualified for hard-switched inductive loads typical of these applications, with avalanche energy rated to handle transformer leakage events. The D2PAK-7 package's thermal performance allows fanless operation at moderate power levels. For higher voltage 100 V+ battery systems, the IRFS4010TRL7PP (100V version, same package) is a drop-in upgrade.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para IRFS3107TRL7PP — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | IRFS3006TRL7PP | IRFS3107-7PPBF | IRFS4010TRL7PP | IRFS3306TRLPBF | IRFS7730-7PPBF |
|---|---|---|---|---|---|---|
| Package | D2PAK-7 (TO-263CB) | D2PAK-7 (TO-263CB) - same | D2PAK-7 (TO-263CB) - same | D2PAK-7 (TO-263CB) - same | D2PAK-7 (TO-263CB) - same | D2PAK-7 (TO-263CB) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS Max | 75 V | 60 V | 75 V | 100 V | 60 V | 75 V |
| RDS(on) Max @ VGS=10V | 3 mOhm | 2.6 mOhm | 3 mOhm | 4 mOhm | 4 mOhm | 2 mOhm |
| Continuous ID @ Tc=25C | 240 A (DigiKey) / 195 A (pkg) | 195 A | 195 A | 190 A | 160 A | 270 A |
| Gate Charge (Qg) Typical | 160 nC | 120 nC | 160 nC | 200 nC | 140 nC | 110 nC |
| Max Power Dissipation @ Tc=25C | 370 W | 370 W | 370 W | 380 W | 300 W | 400 W |
| Packaging Format | Tape & Reel (TRL7PP) | Tape & Reel | Tube | Tape & Reel | Tape & Reel | Tube |
Principais diferenciais
- Higher voltage rating than IRFS3006 series (vs IRFS3006TRL7PP)
- Same die, multiple packaging options (vs IRFS3107-7PPBF)
- Lower RDS(on) than IRFS4010 in 75 V class (vs IRFS4010TRL7PP)
- Better figure-of-merit than older IRFZ48 series (vs IRFZ48L (Vishay))
Notas de projeto
Estimated: at 100 A continuous drain current with 3 mOhm RDS(on), conduction loss is I^2 * R = 100^2 * 0.003 = 30 W. The D2PAK-7 has junction-to-case thermal resistance of approximately 0.4 C/W (per Infineon datasheet convention) and junction-to-ambient of 40 C/W with the minimum recommended pad (1 sq inch, 2 oz copper). At 30 W dissipation, junction-to-ambient would yield a 30*40 = 1200 C rise above ambient, which is impossible - this confirms the part must be heatsunk or operated below its continuous rating. For continuous 100A operation, attach the tab to an aluminum heatsink with thermal interface material achieving junction-to-ambient below 0.5 C/W. Always check the SOA curves at your actual switching frequency and case temperature.
The D2PAK-7 tab is the primary drain connection AND the thermal pad - it MUST be soldered to a sufficiently large copper pour (>=1 sq inch, 2 oz copper recommended) on the top layer, with thermal vias to inner copper planes for additional heat spreading. The source pins (1-3, 5-7) should be tied together on the PCB with wide copper traces to minimize parasitic source inductance. Place the gate drive loop as compact as possible: gate resistor (typically 10-100 ohm) close to the gate pin, with the return path directly to the source-sense pin (pin 5) to avoid ground bounce that can cause spurious turn-on.
Do not exceed 75 V VDS even for transient spikes - inductive loads (motors, transformers) can generate voltage transients well above the DC bus. Add a snubber (RC or RCD) or TVS clamp across drain-source if switching inductive loads. The gate threshold voltage (VGS(th)) is typically 2-4V, so a 10V gate drive provides full enhancement and lowest RDS(on). Driving at 5V is risky as it may leave the MOSFET in the linear region. Finally, paralleling multiple IRFS3107TRL7PP parts requires careful attention to source-sense resistor balancing - without current balancing, one device may carry disproportionate current and fail.
Minimize the high-current loop (drain-source switching loop) to reduce EMI and voltage overshoot. Place input bypass capacitors (>=1uF ceramic + bulk electrolytic) as close as possible to the drain tab. For high-frequency switching (>100 kHz), use a 4-layer PCB with dedicated ground and power planes; the D2PAK-7 thermal pad should have an array of thermal vias (typically 9-16 vias on 1.0-1.2 mm pitch) to inner ground planes for spreading heat. Avoid running signal traces under the device to prevent noise coupling into sensitive analog circuits.
Informações de conformidade
RoHS and lead-free confirmed per Infineon product page and distributor listings. AEC-Q100 not specifically listed for this variant - check Infineon auto-grade portfolio for qualified equivalents. Halogen-free status not explicitly stated in available data.
