IRFS3306TRLPBF - 60V 160A N-Ch MOSFET, 4.2mΩ, D2PAK | Infineon
MPN: IRFS3306TRLPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.15 | $2.15 |
| 10 | $1.95 | $19.50 |
| 100 | $1.72 | $172.00 |
| 500 | $1.48 | $740.00 |
| 1,000 | $1.28 | $1,280.00 |
| 2,500 | $1.12 | $2,800.00 |
IRFS3306TRLPBF Overview
A power MOSFET is a voltage-controlled majority-carrier device that uses an insulated gate to modulate conduction between the drain and source terminals. N-channel MOSFETs such as the IRFS3306TRLPBF are the workhorses of high-current switching because their low on-resistance minimizes I²R conduction loss while fast switching speeds reduce switching loss. Within the broader taxonomy, the IRFS3306TRLPBF sits as: power MOSFET -> N-channel enhancement-mode MOSFET -> discrete semiconductor -> power management component.
Key electrical specifications include a drain-source breakdown voltage (VDS) of 60 V, gate threshold voltage of typically 2.0 V to 4.0 V, total gate charge (Qg) of 85 nC, continuous drain current of 120 A at 25 °C case (160 A pulsed/PCB-limited per IR datasheet), and power dissipation of 230 W at Tc=25 °C. The D2PAK surface-mount footprint exposes the drain tab, enabling direct attachment to a PCB copper pad for thermal dissipation in lieu of a discrete heatsink.
The IRFS3306TRLPBF uses Infineon's HEXFET-style planar stripe cell architecture with an optimized body diode for hard-switched and high-frequency circuits. The combination of 4.2 mΩ RDS(on) at 10 V VGS, low Qg for reduced gate-drive loss, and avalanche-rated silicon gives designers headroom in 48 V telecom buses, 12 V/24 V automotive rails, and motor-drive half-bridges.
Typical applications include high-efficiency synchronous rectification in SMPS, uninterruptible power supplies (UPS), high-speed power switching, hard-switched high-frequency circuits, DC motor control, and battery protection circuits in 12 V/24 V systems. The D2PAK footprint is industry-standard and accepted by most PCB assembly lines.
Design consideration: at high continuous current the part relies on a generous drain-pad copper pour (>= 1 oz copper, >= 1 sq inch) to keep junction temperature below 150 °C - the on-resistance rises sharply with temperature, so thermal design dominates efficiency. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IRFS3306TRLPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IRFS3306TRLPBF (same form factor and footprint) — differing in FET Type, Package, Technology.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFS3306PBF
✅ Drop-In✓ In Stock
$1.28 / Unit
View Datasheet →AUIRFS3306
✅ Drop-In📋 Reference alternative (not in catalog)
NTP5860NL
✅ Drop-In📋 Reference alternative (not in catalog)
SUM110N06-3m9P
✅ Drop-In📋 Reference alternative (not in catalog)
IRFS3306TRR9PBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
IRFS3306TRLPBF Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) @ Tc=25°C | 120 A (Infineon datasheet; 160 A pulsed per IR datasheet family) |
| RDS(on) Max @ VGS=10V | 4.2 mΩ |
| Gate Threshold Voltage (VGS(th)) | 2.0 V to 4.0 V (typical range) |
| Total Gate Charge (Qg) | 85 nC |
| Power Dissipation (PD) @ Tc=25°C | 230 W |
| Operating Temperature Range | -55 °C to +175 °C (junction) |
| Package | D2PAK (TO-263), surface mount |
| Mounting Type | Surface Mount |
| Technology | IR MOSFET™ (HEXFET-style planar stripe) |
| Lead-Free / Halogen-Free | Yes (PbF, Halogen-Free per Infineon datasheet) |
| RoHS Status | Compliant |
| Tape & Reel Packaging | 13-inch reel, 800 pcs/reel typical |
| Body Diode dV/dt Capability | Enhanced (per Infineon datasheet feature) |
IRFS3306TRLPBF Pin Configuration
| Pin 1 | Gate — Gate control input; drive with 10 V for full enhancement |
| Pin 2 | Drain — Drain terminal; internally connected to the metal tab on D2PAK |
| Pin 3 | Source — Source terminal; return path for gate drive and load current |
Safe Operating Area (IRFS3306 family, per Infineon datasheet)
Typical Applications
IRFS3306TRLPBF is suitable for 6 applications: Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS), High-Speed Power Switching, DC Motor Drive (12 V / 24 V), Battery Protection and Hot-Swap, Hard-Switched High-Frequency Circuits.
Synchronous Rectification in SMPS
The IRFS3306TRLPBF's 4.2 mΩ RDS(on) at VGS=10 V and 60 V VDS rating make it an ideal low-side synchronous rectifier in 12 V/24 V output switch-mode power supplies. Its enhanced body diode with high dV/dt capability prevents shoot-through in half-bridge topologies, while the D2PAK package dissipates heat directly into the PCB copper pour. In a typical 500 W SMPS design, two IRFS3306TRLPBF FETs replacing Schottky rectifiers can save 8-12 W of conduction loss at full load. The 85 nC Qg is compatible with standard synchronous-rectifier gate drivers.
Recommended
Uninterruptible Power Supply (UPS)
The 60 V VDS rating and 160 A pulsed drain current make IRFS3306TRLPBF a strong candidate for the high-current battery-disconnect and inverter stages of a 24 V or 48 V UPS. The 230 W power dissipation rating and D2PAK thermal pad enable sustained high-current switching without active cooling in moderate-power systems. Designers typically parallel two IRFS3306TRLPBF devices to share current and halve conduction loss. The AEC-Q101 automotive sibling (AUIRFS3306) is preferred for UPS installed in vehicle environments with wider temperature swings.
Recommended
High-Speed Power Switching
The IRFS3306TRLPBF's 85 nC total gate charge and low RDS(on) support high-frequency switching up to 200 kHz in hard-switched converter topologies. The enhanced body diode dV/dt capability prevents reverse-recovery-induced voltage spikes that would otherwise require snubbers. In a 48 V to 12 V buck converter running at 100 kHz, the IRFS3306TRLPBF delivers above 96% efficiency at 30 A load. Gate drive is straightforward with standard 10 V gate-drive ICs - no negative VGS required for reliable turn-off.
Recommended
DC Motor Drive (12 V / 24 V)
The IRFS3306TRLPBF suits 12 V and 24 V brushed DC motor half-bridge and H-bridge drives where 60 V VDS gives ample transient headroom for inductive kick-back. Continuous 120 A at Tc=25 °C handles motor inrush currents that exceed steady-state ratings by 3-5x. The D2PAK surface-mount package simplifies assembly on robotic and industrial motor-control boards where through-hole parts are inconvenient. For brushed DC motors above 500 W, two IRFS3306TRLPBF in H-bridge configuration with proper flyback diodes are typical.
Recommended
Battery Protection and Hot-Swap
In 24 V or 48 V battery packs, IRFS3306TRLPBF can serve as the hot-swap disconnect MOSFET, with its 4.2 mΩ RDS(on) minimizing steady-state loss. The 60 V VDS rating accommodates fully-charged 48 V lead-acid or Li-ion battery stacks with margin. The device's avalanche rating provides transient absorption when the hot-swap connector mates into a pre-charged bus. Designers typically drive the gate with a controlled rise-time circuit (RC + Zener clamp) to limit inrush during plug-in.
Recommended
Hard-Switched High-Frequency Circuits
Hard-switched circuits such as ZVS/ZCS bridge converters and class-D amplifiers benefit from the IRFS3306TRLPBF's combination of low Qg (85 nC), low RDS(on) (4.2 mΩ), and enhanced body diode dV/dt. In a 1 kW class-D amplifier operating at 250 kHz, two IRFS3306TRLPBF per phase deliver above 95% efficiency while the D2PAK package simplifies the mechanical layout. The device's avalanche rating absorbs the small amount of energy lost to non-ideal soft-switching during transients.
Recommended
Recommended Products Summary
Engineering reference data for IRFS3306TRLPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFS3306PBF | AUIRFS3306 | NTP5860NL | SUM110N06-3m9P |
|---|---|---|---|---|---|
| Package | D2PAK (TO-263) | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same | D2PAK (TO-263) - same |
| Brand | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Drain-to-Source Voltage (VDS) | 60 V | 60 V | 60 V | 60 V | 60 V |
Key Differentiators
- Same silicon across packaging variants - true drop-in flexibility (vs IRFS3306PBF (tube) vs IRFS3306TRLPBF (13-inch reel))
- Automotive-qualified sibling in identical footprint (vs AUIRFS3306 vs IRFS3306TRLPBF)
- Lower RDS(on) than legacy IRF3205 in same D2PAK footprint (vs IRF3205)
Design Notes
Estimated: at ID=80 A continuous and RDS(on)=4.2 mΩ (assuming 1.5x worst-case temperature de-rating to ~6.3 mΩ at 100 °C junction), conduction loss per FET is roughly 40 W. The D2PAK package has theta_JC ~0.6 °C/W, so junction-to-case temperature rise is only 24 °C above case - but theta_JA on a JEDEC 1 sq inch 1 oz copper pad is ~40 °C/W, producing ~1600 °C rise from 40 W ambient-mounted dissipation. Designers must use larger copper pours (>= 2 sq inch), forced airflow, or a clip-on heatsink to keep Tj below 150 °C.
The D2PAK drain tab is the primary thermal path. Solder the tab to a PCB copper pour covering at least 1 sq inch on top layer plus 2 oz copper (or thermal vias to an internal plane) to achieve the rated 230 W power dissipation. Use multiple thermal vias (>= 9 vias, 0.3 mm drill, 1 mm pitch) under the tab to spread heat to internal copper planes. Keep source copper minimal near the gate trace to avoid gate-bounce from high di/dt source inductance.
Do not exceed VDS=60 V even for transient spikes - inductive loads can ring above the supply rail at turn-off, so always include a snubber or TVS clamp sized to clamp below 48 V (20% margin). The 85 nC Qg requires a gate-driver capable of sourcing/sinking >= 1 A peak to switch the FET in <50 ns - standard logic-level GPIO cannot drive this FET directly. Use a dedicated gate-driver IC such as IRS2003 or IR2104 for half-bridge topologies.
Keep the gate-drive loop (gate-driver output -> FET gate -> FET source -> gate-driver ground) physically small (under 1 cm²) to minimize parasitic inductance that causes gate ringing and possible dv/dt-induced turn-on. Place a 10 Ω to 47 Ω gate-source resistor close to the FET pins to dampen resonance. For half-bridge topologies, use a bootstrap supply (e.g., IRS2003) or charge pump for the high-side gate drive.
Compliance Information
PbF (lead-free) finish and Halogen-Free per Infineon datasheet. RoHS compliant. The automotive variant AUIRFS3306 carries AEC-Q101 qualification; the standard IRFS3306TRLPBF is not AEC-Q qualified - use AUIRFS3306 for vehicle applications.
