K4S641632H-UC75 - 64Mb H-die SDRAM 1M x 16 x 4 Banks | Samsung
N.º da peça: K4S641632H-UC75 ✗ Fim de vida| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $4.5 | $4,50 |
| 10 | $4.05 | $40,50 |
| 100 | $3.6 | $360,00 |
| 500 | $3.15 | $1.575,00 |
| 1.000 | $2.85 | $2.850,00 |
K4S641632H-UC75 Visão geral
What is SDRAM? Synchronous DRAM is a dynamic random-access memory that synchronizes data transfers with the rising edge of a system clock, enabling higher throughput than asynchronous DRAM. Within the memory hierarchy, SDRAM sits above SRAM and below cache as the main system memory for embedded systems, networking equipment, and consumer electronics. SDRAM evolved into subsequent generations including DDR, DDR2, DDR3, DDR4, and DDR5 SDRAM; the K4S641632H is a first-generation SDR (Single Data Rate) SDRAM. It uses a four-bank architecture to improve throughput by allowing one bank to precharge while another is being accessed.
Key features of the K4S641632H-UC75 include a maximum operating current of 135 mA, commercial operating temperature range of 0C to +70C, full-page burst capability, and sequential/interleave burst modes. The 1M x 16 organization is well-suited for 16-bit data buses in legacy embedded designs, while the four-bank architecture supports concurrent activation of up to four rows for higher bandwidth. LVCMOS interface simplifies connection to standard logic-level controllers without level shifters.
In terms of architecture, the K4S641632H-UC75 uses a pipelined multi-bank internal structure that supports auto-refresh and self-refresh modes for data retention. The address bus is multiplexed into row and column addresses via RAS#, CAS#, and WE# control lines, reducing pin count and enabling high-density integration in the 54-pin TSOP-II form factor.
Typical applications include networking routers, set-top boxes, industrial control equipment, embedded computing platforms, legacy computer main memory, and graphics frame buffers. The 16-bit-wide data bus is a natural fit for embedded processors and DSPs that expect half-word memory accesses.
When designing with this device, ensure proper decoupling with 0.1 uF and 0.01 uF capacitors placed close to VDD/VSS pins, follow the standard SDRAM initialization sequence (PRECHARGE -> NOP -> MRS), and respect tRCD/tRP/tRFC timing parameters per the datasheet.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Alternativas drop-in para K4S641632H-UC75 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com K4S641632H-UC75 (mesmo formato e footprint) — diferindo em Address Multiplexing, Burst Length, Density, Interface, Memory Type.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
K4S641632H-UI75
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K4S641632H-UC750
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K4S641632N-UC75
✅ Drop-In ⚠️ Especificações não verificadas📋 Alternativa de referência (fora do catálogo)
IS42S16160C-7TL
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
AS4C1M16S-7TCN
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT48LC1M16A1P-7E
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
K4S641632H-UC75 Classificações máximas e características elétricas
| Density | 64 Mb (67,108,864 bits) |
| Organização da memória | 1M x 16 bits x 4 Banks |
| Tipo de memória | SDRAM (Synchronous DRAM) |
| Clock Frequency | 133 MHz |
| Supply Voltage (VDD/VDDQ) | 3.3 V |
| Interface | LVCMOS |
| Max Operating Current | 135 mA |
| Temperatura de operação | 0C to +70C (Commercial) |
| Package Type | 54-pin TSOP-II |
| Lead Finish | Pb-Free (RoHS compliant) |
| Bank Architecture | 4 Banks |
| Burst Length | 1, 2, 4, 8, Full Page |
| Burst Type | Sequential or Interleave |
| Address Multiplexing | Yes (RAS#, CAS# controlled) |
| Refresh | Auto-Refresh and Self-Refresh |
| Process Technology | Samsung high-performance CMOS |
| Data Width | 16 bits |
Configuração de pinos do K4S641632H-UC75
| Pino 1 | VDD — Power supply (3.3V) |
| Pino 2 | DQ0 — Data I/O line 0 |
| Pino 3 | VDDQ — DQ power supply |
| Pino 4 | DQ1 — Data I/O line 1 |
| Pino 5 | DQ2 — Data I/O line 2 |
| Pino 6 | VSSQ — DQ ground |
| Pino 7 | DQ3 — Data I/O line 3 |
| Pino 8 | DQ4 — Data I/O line 4 |
| Pino 9 | VDDQ — DQ power supply |
| Pino 10 | DQ5 — Data I/O line 5 |
| Pino 11 | DQ6 — Data I/O line 6 |
| Pino 12 | VSSQ — DQ ground |
| Pino 13 | DQ7 — Data I/O line 7 |
| Pino 14 | NC — Not connected |
| Pino 15 | VDD — Power supply (3.3V) |
| Pino 16 | LDQM — Lower DQ mask enable |
| Pino 17 | WE# — Write enable (active low) |
| Pino 18 | CAS# — Column address strobe (active low) |
| Pino 19 | RAS# — Row address strobe (active low) |
| Pino 20 | CS# — Chip select (active low) |
| Pino 21 | BA0 — Bank address 0 |
| Pino 22 | BA1 — Bank address 1 |
| Pino 23 | A11 — Address bit 11 |
| Pino 24 | A10 — Address bit 10 / auto-precharge |
| Pino 25 | A0 — Address bit 0 |
| Pino 26 | A1 — Address bit 1 |
| Pino 27 | A2 — Address bit 2 |
| Pino 28 | A3 — Address bit 3 |
| Pino 29 | VDD — Power supply (3.3V) |
| Pino 30 | VSS — Ground |
| Pino 31 | A4 — Address bit 4 |
| Pino 32 | A5 — Address bit 5 |
| Pino 33 | A6 — Address bit 6 |
| Pino 34 | A7 — Address bit 7 |
| Pino 35 | A8 — Address bit 8 |
| Pino 36 | A9 — Address bit 9 |
| Pino 37 | CKE — Clock enable |
| Pino 38 | CLK — System clock input |
| Pino 39 | UDQM — Upper DQ mask enable |
| Pino 40 | NC — Not connected |
| Pino 41 | VSS — Ground |
| Pino 42 | DQ15 — Data I/O line 15 |
| Pino 43 | VSSQ — DQ ground |
| Pino 44 | DQ14 — Data I/O line 14 |
| Pino 45 | DQ13 — Data I/O line 13 |
| Pino 46 | VDDQ — DQ power supply |
| Pino 47 | DQ12 — Data I/O line 12 |
| Pino 48 | DQ11 — Data I/O line 11 |
| Pino 49 | VSSQ — DQ ground |
| Pino 50 | DQ10 — Data I/O line 10 |
| Pino 51 | DQ9 — Data I/O line 9 |
| Pino 52 | VDDQ — DQ power supply |
| Pino 53 | DQ8 — Data I/O line 8 |
| Pino 54 | VSS — Ground |
Aplicações típicas
K4S641632H-UC75 é adequado para 6 aplicaçãos: Legacy Networking Router Main Memory, Set-Top Box Memory Subsystem, Industrial Control and HMI Equipment, Embedded Computing and Single-Board Computers, Legacy Printer and Imaging Controller Memory, Test and Measurement Instrumentation.
Legacy Networking Router Main Memory
The K4S641632H-UC75 fits legacy networking router designs as main working memory for packet buffering and routing tables. Its 1M x 16 organization provides 16-bit-wide access compatible with embedded network processors such as the Motorola MPC860 and Intel IXP family, while the 133 MHz clock rate keeps up with OC-3 to Fast Ethernet throughput. The four-bank architecture supports concurrent bank activation to improve memory throughput during burst packet processing. Its 135 mA maximum operating current is manageable for typical router power budgets, and the 54-pin TSOP-II footprint matches legacy PCB layouts from the late 1990s and early 2000s.
Recomendado
Set-Top Box Memory Subsystem
In set-top box (STB) designs, the K4S641632H-UC75 provides 64 Mb of working memory for MPEG-2 transport stream demux buffers, on-screen display frame buffers, and application code execution. Its 133 MHz clock rate and 16-bit data width pair well with STB MPEG decoders such as the STi5512 or Broadcom BCM7110, which expect 16-bit PC133 SDRAM. The four-bank architecture allows simultaneous demux and OSD rendering without bank conflicts. The 54-pin TSOP-II package simplifies PCB layout in space-constrained STB enclosures, and the commercial 0C to +70C temperature range matches indoor operating environments.
Recomendado
Industrial Control and HMI Equipment
Industrial control equipment and human-machine interface (HMI) panels use the K4S641632H-UC75 as main memory for embedded controllers running real-time operating systems such as VxWorks or embedded Linux. Its 64 Mb capacity supports Linux kernel + rootfs in single-chip configurations, while the 16-bit data width is compatible with ARM7/ARM9 SoCs such as the Samsung S3C2440 and Atmel AT91SAM9260 that boot from external SDRAM. The four-bank architecture improves real-time responsiveness by allowing concurrent memory accesses for display refresh and control loop execution. The commercial temperature grade suits factory-floor indoor installations.
Recomendado
Embedded Computing and Single-Board Computers
Embedded single-board computers (SBCs) and PC/104 platforms use the K4S641632H-UC75 as 64 MB of main memory for x86 or PowerPC CPU modules that require PC133 SDRAM. The 16-bit-wide configuration can be combined with a second K4S641632H-UC75 to form a 32-bit-wide memory bank with byte-lane parity, matching the data bus of x86 embedded CPUs such as the AMD Geode LX800 and Intel Atom E6xx. The 133 MHz clock rate and standard JEDEC PC133 SDRAM interface ensure compatibility with a wide range of legacy CPU chipsets without timing adjustments.
Recomendado
Legacy Printer and Imaging Controller Memory
Laser printers, multifunction devices, and image processing controllers use the K4S641632H-UC75 as page buffer memory between the print engine controller ASIC and the formatter board. Its 64 Mb capacity holds a full A4 page at 600 DPI grayscale without compression, and the 133 MHz bandwidth supports real-time raster image processing at print engine speeds up to 30 ppm. The 16-bit data width pairs with printer controller ASICs such as the TI TMS320C31x DSP family and the Sharp LH7 series. The four-bank architecture allows the print engine DMA and the formatter to access memory without excessive bus contention.
Recomendado
Test and Measurement Instrumentation
Bench-top oscilloscopes, logic analyzers, and signal generators use the K4S641632H-UC75 as waveform capture buffer memory. The 64 Mb capacity allows long acquisition windows at high sample rates, while the 133 MHz clock rate supports real-time sampling rates up to 100 MSPS with adequate memory depth. The four-bank architecture allows simultaneous waveform capture and display refresh without bus conflicts. The commercial 0C to +70C temperature range suits laboratory environments, and the 54-pin TSOP-II package simplifies PCB layout in compact instrument enclosures where vertical board-to-board stacking is required.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para K4S641632H-UC75 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | K4S641632H-UI75 | K4S641632H-UC750 | K4S641632N-UC75 | IS42S16160C-7TL | AS4C1M16S-7TCN | MT48LC1M16A1P-7E |
|---|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | ISSI | Alliance Memory | Micron Technology |
| Package | 54-pin TSOP-II | 54-pin TSOP-II - same | 54-pin TSOP-II - same | 54-pin TSOP-II - same | 54-pin TSOP-II - same | 54-pin TSOP-II - same | 54-pin TSOP-II - same |
| Density | 64 Mb | 64 Mb | 64 Mb | 64 Mb | 64 Mb | 64 Mb | 64 Mb |
| Organization | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks |
| Clock Frequency | 133 MHz | 133 MHz | 133 MHz | 133 MHz | 143 MHz (+8%) | 143 MHz (+8%) | 133 MHz |
| Supply Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Operating Temperature | 0C to +70C (Commercial) | -40C to +85C (Industrial) | 0C to +70C (Commercial) | 0C to +70C (Commercial) | 0C to +70C (Commercial) | 0C to +70C (Commercial) | 0C to +70C (Commercial) |
| RoHS Compliance | Yes (Pb-Free) | Yes (Pb-Free) | Yes (Pb-Free) | Yes (Pb-Free) | Yes | Yes | Yes |
Principais diferenciais
- Standardized JEDEC PC133 SDRAM interface (vs IS42S16160C-7TL (ISSI))
- Wide legacy design support (vs AS4C1M16S-7TCN (Alliance Memory))
- Commercial temperature grade as standard (vs K4S641632H-UI75 (Samsung industrial))
Notas de projeto
Place 0.1 uF and 0.01 uF decoupling capacitors as close as possible to each VDD/VDDQ pin and corresponding VSS/VSSQ pins. The K4S641632H-UC75 draws up to 135 mA during active read/write cycles at 133 MHz; bulk capacitance of at least 10 uF near the device helps maintain VDD within +/-5% tolerance during bank activation peaks. Use a low-impedance ground plane with VSS/VSSQ tied together at a single star point.
Route clock (CLK) and clock enable (CKE) traces as short as possible with matched impedance to the controller. Keep DQ lines matched in length within +/- 0.5 inches (12.5 mm) to avoid data skew at 133 MHz. Address lines A0-A11 should be routed together with minimal stubs. The 54-pin TSOP-II has a 0.8 mm pin pitch; use 0.4 mm-wide traces with 0.2 mm clearance to maintain signal integrity.
Do not skip the SDRAM initialization sequence: PRECHARGE ALL -> 8x AUTO REFRESH -> MRS to set CAS latency and burst length. Skipping initialization or insufficient 200 us power-on delay after stable VDD/CKE will cause undefined behavior on first access. For burst lengths greater than 1, configure LDQM and UDQM appropriately to terminate bursts early. Always issue a PRECHARGE before changing active row in a bank.
Informações de conformidade
RoHS compliant (Pb-Free lead finish) per Samsung datasheet description. REACH, halogen-free, and conflict minerals declarations are not in the verified web data; consult Samsung product environmental compliance documentation directly for authoritative statements.
