K4S641632H-UC75 - 64Mb H-die SDRAM 1M x 16 x 4 Banks | Samsung
부품 번호: K4S641632H-UC75 ✗ 단종| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $4.5 | $4.50 |
| 10 | $4.05 | $40.50 |
| 100 | $3.6 | $360.00 |
| 500 | $3.15 | $1,575.00 |
| 1,000 | $2.85 | $2,850.00 |
K4S641632H-UC75 개요
What is SDRAM? Synchronous DRAM is a dynamic random-access memory that synchronizes data transfers with the rising edge of a system clock, enabling higher throughput than asynchronous DRAM. Within the memory hierarchy, SDRAM sits above SRAM and below cache as the main system memory for embedded systems, networking equipment, and consumer electronics. SDRAM evolved into subsequent generations including DDR, DDR2, DDR3, DDR4, and DDR5 SDRAM; the K4S641632H is a first-generation SDR (Single Data Rate) SDRAM. It uses a four-bank architecture to improve throughput by allowing one bank to precharge while another is being accessed.
Key features of the K4S641632H-UC75 include a maximum operating current of 135 mA, commercial operating temperature range of 0C to +70C, full-page burst capability, and sequential/interleave burst modes. The 1M x 16 organization is well-suited for 16-bit data buses in legacy embedded designs, while the four-bank architecture supports concurrent activation of up to four rows for higher bandwidth. LVCMOS interface simplifies connection to standard logic-level controllers without level shifters.
In terms of architecture, the K4S641632H-UC75 uses a pipelined multi-bank internal structure that supports auto-refresh and self-refresh modes for data retention. The address bus is multiplexed into row and column addresses via RAS#, CAS#, and WE# control lines, reducing pin count and enabling high-density integration in the 54-pin TSOP-II form factor.
Typical applications include networking routers, set-top boxes, industrial control equipment, embedded computing platforms, legacy computer main memory, and graphics frame buffers. The 16-bit-wide data bus is a natural fit for embedded processors and DSPs that expect half-word memory accesses.
When designing with this device, ensure proper decoupling with 0.1 uF and 0.01 uF capacitors placed close to VDD/VSS pins, follow the standard SDRAM initialization sequence (PRECHARGE -> NOP -> MRS), and respect tRCD/tRP/tRFC timing parameters per the datasheet.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: K4S641632H-UC75 — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4S641632H-UC75 (동일 폼 팩터 및 풋프린트) — 차이점: Address Multiplexing, Burst Length, Density, Interface, Memory Type.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4S641632H-UI75
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4S641632H-UC750
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4S641632N-UC75
✅ 드롭인 ⚠️ 사양 미검증📋 참조 대체품 (카탈로그에 없음)
IS42S16160C-7TL
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
AS4C1M16S-7TCN
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
MT48LC1M16A1P-7E
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
K4S641632H-UC75 최대 정격 & 전기적 특성
| Density | 64 Mb (67,108,864 bits) |
| 메모리 구성 | 1M x 16 bits x 4 Banks |
| 메모리 유형 | SDRAM (Synchronous DRAM) |
| Clock Frequency | 133 MHz |
| Supply Voltage (VDD/VDDQ) | 3.3 V |
| 인터페이스 | LVCMOS |
| Max Operating Current | 135 mA |
| 동작 온도 | 0C to +70C (Commercial) |
| Package Type | 54-pin TSOP-II |
| Lead Finish | Pb-Free (RoHS compliant) |
| Bank Architecture | 4 Banks |
| Burst Length | 1, 2, 4, 8, Full Page |
| Burst Type | Sequential or Interleave |
| Address Multiplexing | Yes (RAS#, CAS# controlled) |
| Refresh | Auto-Refresh and Self-Refresh |
| Process Technology | Samsung high-performance CMOS |
| Data Width | 16 bits |
K4S641632H-UC75 핀 구성
| 핀 1 | VDD — Power supply (3.3V) |
| 핀 2 | DQ0 — Data I/O line 0 |
| 핀 3 | VDDQ — DQ power supply |
| 핀 4 | DQ1 — Data I/O line 1 |
| 핀 5 | DQ2 — Data I/O line 2 |
| 핀 6 | VSSQ — DQ ground |
| 핀 7 | DQ3 — Data I/O line 3 |
| 핀 8 | DQ4 — Data I/O line 4 |
| 핀 9 | VDDQ — DQ power supply |
| 핀 10 | DQ5 — Data I/O line 5 |
| 핀 11 | DQ6 — Data I/O line 6 |
| 핀 12 | VSSQ — DQ ground |
| 핀 13 | DQ7 — Data I/O line 7 |
| 핀 14 | NC — Not connected |
| 핀 15 | VDD — Power supply (3.3V) |
| 핀 16 | LDQM — Lower DQ mask enable |
| 핀 17 | WE# — Write enable (active low) |
| 핀 18 | CAS# — Column address strobe (active low) |
| 핀 19 | RAS# — Row address strobe (active low) |
| 핀 20 | CS# — Chip select (active low) |
| 핀 21 | BA0 — Bank address 0 |
| 핀 22 | BA1 — Bank address 1 |
| 핀 23 | A11 — Address bit 11 |
| 핀 24 | A10 — Address bit 10 / auto-precharge |
| 핀 25 | A0 — Address bit 0 |
| 핀 26 | A1 — Address bit 1 |
| 핀 27 | A2 — Address bit 2 |
| 핀 28 | A3 — Address bit 3 |
| 핀 29 | VDD — Power supply (3.3V) |
| 핀 30 | VSS — Ground |
| 핀 31 | A4 — Address bit 4 |
| 핀 32 | A5 — Address bit 5 |
| 핀 33 | A6 — Address bit 6 |
| 핀 34 | A7 — Address bit 7 |
| 핀 35 | A8 — Address bit 8 |
| 핀 36 | A9 — Address bit 9 |
| 핀 37 | CKE — Clock enable |
| 핀 38 | CLK — System clock input |
| 핀 39 | UDQM — Upper DQ mask enable |
| 핀 40 | NC — Not connected |
| 핀 41 | VSS — Ground |
| 핀 42 | DQ15 — Data I/O line 15 |
| 핀 43 | VSSQ — DQ ground |
| 핀 44 | DQ14 — Data I/O line 14 |
| 핀 45 | DQ13 — Data I/O line 13 |
| 핀 46 | VDDQ — DQ power supply |
| 핀 47 | DQ12 — Data I/O line 12 |
| 핀 48 | DQ11 — Data I/O line 11 |
| 핀 49 | VSSQ — DQ ground |
| 핀 50 | DQ10 — Data I/O line 10 |
| 핀 51 | DQ9 — Data I/O line 9 |
| 핀 52 | VDDQ — DQ power supply |
| 핀 53 | DQ8 — Data I/O line 8 |
| 핀 54 | VSS — Ground |
일반적인 애플리케이션
K4S641632H-UC75 적합 용도: 6 애플리케이션s: Legacy Networking Router Main Memory, Set-Top Box Memory Subsystem, Industrial Control and HMI Equipment, Embedded Computing and Single-Board Computers, Legacy Printer and Imaging Controller Memory, Test and Measurement Instrumentation.
Legacy Networking Router Main Memory
The K4S641632H-UC75 fits legacy networking router designs as main working memory for packet buffering and routing tables. Its 1M x 16 organization provides 16-bit-wide access compatible with embedded network processors such as the Motorola MPC860 and Intel IXP family, while the 133 MHz clock rate keeps up with OC-3 to Fast Ethernet throughput. The four-bank architecture supports concurrent bank activation to improve memory throughput during burst packet processing. Its 135 mA maximum operating current is manageable for typical router power budgets, and the 54-pin TSOP-II footprint matches legacy PCB layouts from the late 1990s and early 2000s.
추천
Set-Top Box Memory Subsystem
In set-top box (STB) designs, the K4S641632H-UC75 provides 64 Mb of working memory for MPEG-2 transport stream demux buffers, on-screen display frame buffers, and application code execution. Its 133 MHz clock rate and 16-bit data width pair well with STB MPEG decoders such as the STi5512 or Broadcom BCM7110, which expect 16-bit PC133 SDRAM. The four-bank architecture allows simultaneous demux and OSD rendering without bank conflicts. The 54-pin TSOP-II package simplifies PCB layout in space-constrained STB enclosures, and the commercial 0C to +70C temperature range matches indoor operating environments.
추천
Industrial Control and HMI Equipment
Industrial control equipment and human-machine interface (HMI) panels use the K4S641632H-UC75 as main memory for embedded controllers running real-time operating systems such as VxWorks or embedded Linux. Its 64 Mb capacity supports Linux kernel + rootfs in single-chip configurations, while the 16-bit data width is compatible with ARM7/ARM9 SoCs such as the Samsung S3C2440 and Atmel AT91SAM9260 that boot from external SDRAM. The four-bank architecture improves real-time responsiveness by allowing concurrent memory accesses for display refresh and control loop execution. The commercial temperature grade suits factory-floor indoor installations.
추천
Embedded Computing and Single-Board Computers
Embedded single-board computers (SBCs) and PC/104 platforms use the K4S641632H-UC75 as 64 MB of main memory for x86 or PowerPC CPU modules that require PC133 SDRAM. The 16-bit-wide configuration can be combined with a second K4S641632H-UC75 to form a 32-bit-wide memory bank with byte-lane parity, matching the data bus of x86 embedded CPUs such as the AMD Geode LX800 and Intel Atom E6xx. The 133 MHz clock rate and standard JEDEC PC133 SDRAM interface ensure compatibility with a wide range of legacy CPU chipsets without timing adjustments.
추천
Legacy Printer and Imaging Controller Memory
Laser printers, multifunction devices, and image processing controllers use the K4S641632H-UC75 as page buffer memory between the print engine controller ASIC and the formatter board. Its 64 Mb capacity holds a full A4 page at 600 DPI grayscale without compression, and the 133 MHz bandwidth supports real-time raster image processing at print engine speeds up to 30 ppm. The 16-bit data width pairs with printer controller ASICs such as the TI TMS320C31x DSP family and the Sharp LH7 series. The four-bank architecture allows the print engine DMA and the formatter to access memory without excessive bus contention.
추천
Test and Measurement Instrumentation
Bench-top oscilloscopes, logic analyzers, and signal generators use the K4S641632H-UC75 as waveform capture buffer memory. The 64 Mb capacity allows long acquisition windows at high sample rates, while the 133 MHz clock rate supports real-time sampling rates up to 100 MSPS with adequate memory depth. The four-bank architecture allows simultaneous waveform capture and display refresh without bus conflicts. The commercial 0C to +70C temperature range suits laboratory environments, and the 54-pin TSOP-II package simplifies PCB layout in compact instrument enclosures where vertical board-to-board stacking is required.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4S641632H-UC75 — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4S641632H-UI75 | K4S641632H-UC750 | K4S641632N-UC75 | IS42S16160C-7TL | AS4C1M16S-7TCN | MT48LC1M16A1P-7E |
|---|---|---|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | ISSI | Alliance Memory | Micron Technology |
| Package | 54-pin TSOP-II | 54-pin TSOP-II - same | 54-pin TSOP-II - same | 54-pin TSOP-II - same | 54-pin TSOP-II - same | 54-pin TSOP-II - same | 54-pin TSOP-II - same |
| Density | 64 Mb | 64 Mb | 64 Mb | 64 Mb | 64 Mb | 64 Mb | 64 Mb |
| Organization | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks | 1M x 16 x 4 Banks |
| Clock Frequency | 133 MHz | 133 MHz | 133 MHz | 133 MHz | 143 MHz (+8%) | 143 MHz (+8%) | 133 MHz |
| Supply Voltage | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| Operating Temperature | 0C to +70C (Commercial) | -40C to +85C (Industrial) | 0C to +70C (Commercial) | 0C to +70C (Commercial) | 0C to +70C (Commercial) | 0C to +70C (Commercial) | 0C to +70C (Commercial) |
| RoHS Compliance | Yes (Pb-Free) | Yes (Pb-Free) | Yes (Pb-Free) | Yes (Pb-Free) | Yes | Yes | Yes |
주요 차별점
- Standardized JEDEC PC133 SDRAM interface (vs IS42S16160C-7TL (ISSI))
- Wide legacy design support (vs AS4C1M16S-7TCN (Alliance Memory))
- Commercial temperature grade as standard (vs K4S641632H-UI75 (Samsung industrial))
설계 노트
Place 0.1 uF and 0.01 uF decoupling capacitors as close as possible to each VDD/VDDQ pin and corresponding VSS/VSSQ pins. The K4S641632H-UC75 draws up to 135 mA during active read/write cycles at 133 MHz; bulk capacitance of at least 10 uF near the device helps maintain VDD within +/-5% tolerance during bank activation peaks. Use a low-impedance ground plane with VSS/VSSQ tied together at a single star point.
Route clock (CLK) and clock enable (CKE) traces as short as possible with matched impedance to the controller. Keep DQ lines matched in length within +/- 0.5 inches (12.5 mm) to avoid data skew at 133 MHz. Address lines A0-A11 should be routed together with minimal stubs. The 54-pin TSOP-II has a 0.8 mm pin pitch; use 0.4 mm-wide traces with 0.2 mm clearance to maintain signal integrity.
Do not skip the SDRAM initialization sequence: PRECHARGE ALL -> 8x AUTO REFRESH -> MRS to set CAS latency and burst length. Skipping initialization or insufficient 200 us power-on delay after stable VDD/CKE will cause undefined behavior on first access. For burst lengths greater than 1, configure LDQM and UDQM appropriately to terminate bursts early. Always issue a PRECHARGE before changing active row in a bank.
규정 준수 정보
RoHS compliant (Pb-Free lead finish) per Samsung datasheet description. REACH, halogen-free, and conflict minerals declarations are not in the verified web data; consult Samsung product environmental compliance documentation directly for authoritative statements.
