MT53B256M32D1NP-062 - 8Gb LPDDR4 SDRAM 1.6GHz | Micron
N.º da peça: MT53B256M32D1NP-062 ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $12.5 | $12,50 |
| 10 | $11.6 | $116,00 |
| 100 | $10.4 | $1.040,00 |
| 500 | $9.6 | $4.800,00 |
| 1.000 | $8.9 | $8.900,00 |
MT53B256M32D1NP-062 Visão geral
LPDDR4 (Low Power Double Data Rate 4) is a type of synchronous DRAM standardized by JEDEC and optimized for mobile and embedded systems, offering higher bandwidth and lower power than standard DDR4. Within the memory hierarchy - LPDDR3, LPDDR4, LPDDR5 - the LPDDR4 generation balances performance and efficiency, making it the mainstream choice for smartphones, tablets, AI edge devices, and embedded computing modules that require fast access to large working sets.
Key features of the MT53B256M32D1NP-062 include a wide 32-bit data bus, dual supply rails of 1.1V (VDD1) and 1.8V (VDD2) with 1.1V I/O, and support for deep power-down and self-refresh modes that minimize standby current in battery-powered designs. Bank group architecture improves random-access performance, while on-die features and JEDEC LPDDR4 compliance ensure interoperability with a broad range of SoC memory controllers.
Technically, this device uses Micron's advanced DRAM process technology to achieve high data rates at low active power. The -062 speed grade supports 1.6 GHz operation. The device operates over a case temperature range of -30C to +85C (WT speed/temp variant), suiting both consumer and industrial environments. The 200-WFBGA package provides a compact, low-profile footprint that facilitates high-density PCB designs in space-constrained products.
Typical applications include flagship smartphone and tablet main memory, AI edge inference accelerators, automotive infotainment, industrial controllers, and embedded logging/computing modules where real-time video processing and machine learning workloads demand high memory bandwidth per watt.
When designing with this device, place decoupling capacitors close to the VDD1/VDD2 power balls and follow Micron's datasheet layout guidelines: length-match and route the high-speed CA and DQ buses with controlled impedance to preserve signal integrity at 3200 MT/s.
This page synthesizes distributor pricing, drop-in alternative analysis, and practical design notes not found in the manufacturer datasheet.
Alternativas drop-in para MT53B256M32D1NP-062 — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
MT53B256M32D1NP-062-AUT
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT53B256M32D1NP-062 AIT:C
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT53B256M32D1DS-062 AAT:C
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT53B256M32D1NP-062 WT ES:C
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT52L256M32D1PF-093 WT:B TR
✅ Drop-In📋 Alternativa de referência (fora do catálogo)
MT53B256M32D1NP-062 Especificações
| Tipo de memória | Mobile LPDDR4 SDRAM |
| Density | 8 Gbit |
| Organização da memória | 256M x 32 |
| Clock Frequency | 1.6 GHz |
| Taxa de dados | LPDDR4-3200 (3200 MT/s) |
| Largura do barramento de dados | 32 bit |
| Supply Voltage VDD1 | 1.1 V |
| Supply Voltage VDD2 | 1.8 V |
| I/O Voltage | 1.1 V |
| Encapsulamento | 200-WFBGA (10 x 14.5 mm) |
| Ball Pitch | 0.5 mm |
| Tipo de montagem | Surface Mount |
| Temperatura de operação | -30C to +85C (case) |
| Low Power Modes | Deep power-down, self-refresh |
| Standards Compliance | JEDEC LPDDR4 |
| Speed Grade Suffix | -062 |
Guia de Configuração de Pinos do MT53B256M32D1NP-062 200-wfbga (10 x 14.5 mm)
Configuração de pinos para MT53B256M32D1NP-062 (pacote 200-wfbga (10 x 14.5 mm)). A numeração dos pinos, funções e diagramas de conexão estão definidos no datasheet do fabricante. Consulte-o para o footprint exato e diretrizes de soldagem.
Nenhum dado detalhado de pinagem disponível para MT53B256M32D1NP-062.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
MT53B256M32D1NP-062 é adequado para 6 aplicaçãos: Smartphone and Tablet Main Memory, AI Edge Inference Accelerators, Automotive Infotainment, Industrial Controllers and Embedded Computing, Networking and Communication Equipment, Test, Measurement, and Data Logging.
Smartphone and Tablet Main Memory
The MT53B256M32D1NP-062's 8Gbit density on a 32-bit bus and LPDDR4-3200 data rate provide the bandwidth headroom that flagship smartphone SoCs demand for multitasking, 4K video, and gaming, while the 1.1V VDD1 core rail minimizes energy per bit transferred. In a typical design, one or two of these components are soldered alongside or stacked with the application processor (PoP or side-by-side on the same 200-WFBGA footprint), with the controller's PHY tuned to the -062 speed grade. Deep power-down and self-refresh modes let the memory drop to microamp-class standby current when the screen is off, directly extending battery life. The 10 x 14.5 mm WFBGA footprint with 0.5 mm pitch fits the tight board real estate of modern handsets.
Recomendado
AI Edge Inference Accelerators
Edge AI modules running CNN inference require fast streaming of activation maps and model weights; the MT53B256M32D1NP-062 delivers 8Gbit of working memory at LPDDR4-3200 bandwidth with the power efficiency needed for fanless, thermally constrained edge boxes. Its 32-bit bus keeps the SoC's memory controller simple, and JEDEC LPDDR4 compliance means it interoperates with common edge-AI SoCs (NPU-integrated processors) without custom PHY work. In these systems the part typically runs in a burst-interleaved access pattern; bank group architecture improves random-access efficiency for tensor workloads. The extended-temperature AIT:C variant of the same die suits industrial edge deployments from -40C-class environments without a PCB respin.
Recomendado
Automotive Infotainment
Automotive IVI head units require high-bandwidth graphics memory that survives extended cabin temperatures; the MT53B256M32D1NP-062-AUT variant listed in Micron's LPDDR4 catalog addresses exactly this use case with the same 8Gb, 256M x 32, 1.6 GHz architecture and identical 200-WFBGA footprint as the commercial part. Typical designs place two components beside the automotive SoC to feed GPU rendering of navigation and instrument clusters. The 1.1V core rail reduces the DRAM's contribution to the vehicle's thermal budget, and the AIT/AUT grading provides the screening expected in in-vehicle environments. Designers should confirm AEC qualification level and PPAP support with Micron for their specific program tier before design win.
Recomendado
Industrial Controllers and Embedded Computing
Industrial controllers, gateways, and embedded computing modules use the MT53B256M32D1NP-062 as main system memory where its -30C to +85C case temperature range and industrial availability cover factory-floor environments. Compared with DDR4 DIMM solutions, this LPDDR4 component saves board area (10 x 14.5 mm), lowers total power at 1.1V, and eliminates the need for high-speed DIMM connectors, improving reliability under vibration. The 8Gbit density accommodates real-time control stacks, protocol processing, and data logging buffers. The AIT:C extended-temperature variant of the same die offers a drop-in upgrade path for harsher enclosures, and JEDEC LPDDR4 compliance ensures broad compatibility with industrial SoCs and SOM module vendors.
Recomendado
Networking and Communication Equipment
Routers, switches, and 5G small-cell equipment need buffer memory that combines high throughput with low standby power for always-on operation; the MT53B256M32D1NP-062 provides 8Gbit of packet-buffer and working memory at LPDDR4-3200 rates on a 32-bit bus. Its bank group architecture improves random-access performance for irregular packet flows, while self-refresh minimizes idle draw in systems that must meet energy-efficiency targets. The 200-WFBGA footprint allows dense memory population on line cards and CPE boards. Designs requiring buffer resizing across product tiers can pair this 8Gb part with the half-density MT53B128M32D1NP-062 from the same family on a shared footprint strategy for BOM commonality.
Recomendado
Test, Measurement, and Data Logging
Test instruments, data-acquisition systems, and embedded logging equipment use the MT53B256M32D1NP-062 as high-speed capture memory: its 1.6 GHz operation sustains the sustained write bandwidth needed to ingest continuous ADC streams, and the 8Gbit depth provides seconds of buffer time at high sample rates. Compared with SRAM buffering, this LPDDR4 DRAM offers orders-of-magnitude more density per dollar at 1.1V operating power. The -30C to +85C case range covers bench and field environments, and JEDEC LPDDR4 controller availability in FPGA-adjacent SoCs simplifies integration. For logging systems that also store data locally, the component pairs naturally with Micron NAND such as the MT29F1G08ABAEAWP-IT:E as downstream non-volatile storage.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para MT53B256M32D1NP-062 — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | MT53B256M32D1NP-062-AUT | MT53B256M32D1NP-062 AIT:C | MT53B256M32D1DS-062 AAT:C | MT52L256M32D1PF-093 WT:B TR |
|---|---|---|---|---|---|
| Package | 200-WFBGA (10 x 14.5 mm) | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA (10 x 14.5 mm) - same | 200-WFBGA - same class |
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Micron Technology |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 256M x 32 | 256M x 32 | 256M x 32 | 256M x 32 | 256M x 32 |
| Clock Frequency | 1.6 GHz (LPDDR4-3200) | 1.6 GHz (LPDDR4-3200) | 1.6 GHz (LPDDR4-3200) | 1.6 GHz (LPDDR4-3200) | LPDDR4X, -093 speed grade |
| Temperature Grade | WT (-30C to +85C case) | Automotive (AUT) | Extended (AIT) | Extended (AAT) | WT |
| Generation / Core Voltage | LPDDR4, VDD1 1.1 V | LPDDR4, 1.1 V | LPDDR4, 1.1 V | LPDDR4, 1.1 V | LPDDR4X (lower VDD2) |
| Drop-in on Same Footprint | Reference | Yes - pin-to-pin | Yes - pin-to-pin | Yes - pin-to-pin | Verify ballmap + controller |
Principais diferenciais
- Full -062 speed grade (LPDDR4-3200) in standard temperature grade (vs MT52L256M32D1PF-093 WT:B TR)
- Automotive drop-in path without respin (vs MT53B256M32D1NP-062 AIT:C)
- Broad distribution base (vs MT53B256M32D1DS-062 AAT:C)
Notas de projeto
At LPDDR4-3200 (1.6 GHz), CA and DQ bus routing must follow Micron's LPDDR4 design guide: fly-by or point-to-point topology per the controller PHY spec, matched trace lengths within controller-specified skew windows, and controlled impedance (typically 40-50 ohm single-ended per Micron/OEM guidelines). Reference the Micron datasheet layout section for ball breakout and keepaway rules around the 0.5 mm pitch ball array. Estimated: at 3200 MT/s the unit interval is about 312 ps, so even 15 mm of unmatched trace (~90 ps on FR-4) consumes a significant timing budget - length matching is not optional.
The MT53B256M32D1NP-062 requires a clean 1.1V VDD1 rail and a separate 1.8V VDD2 rail. Place bulk and high-frequency decoupling close to the VDD balls; LPDDR4 VDD1 noise tolerance is tight, so use a dedicated PMIC LPDDR4 rail or LDO with fast transient response. Estimated: even modest core current swings of hundreds of milliamps during bank-to-bank transitions produce rail droop if decoupling is distant. Verify actual IDD currents and sequencing order (VDD2 before/with VDD1 per Micron power-up sequence) against the current datasheet revision.
Do not confuse suffix variants when ordering: WT:C (standard), AIT:C (extended temp), AUT (automotive), WT ES:C (engineering sample) all share the 200-WFBGA footprint but differ in screening and, for ES silicon, possibly AC timing. Designing production boards against ES datasheet parameters is a common error. Also confirm controller PHY training settings for the -062 speed grade; running a -093-validated controller profile on a -062 part, or vice versa, can cause marginal read/write eye failures at temperature extremes.
Informações de conformidade
Verified web data does not explicitly state RoHS/REACH status for this part. Micron environmental datasheets should be consulted; the -AUT variant follows Micron automotive program documentation.
