MT53B256M32D1NP-062 - 8Gb LPDDR4 SDRAM 1.6GHz | Micron
MPN: MT53B256M32D1NP-062 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.2 | $112.00 |
| 100 | $9.8 | $980.00 |
| 500 | $8.9 | $4,450.00 |
| 1,000 | $8.1 | $8,100.00 |
Drop-in alternatives for MT53B256M32D1NP-062 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
MT53B256M32D1NP-062 AIT:C
β Drop-Inπ Reference alternative (not in catalog)
MT53B256M32D1NP-062 AUT
β Drop-Inπ Reference alternative (not in catalog)
MT53B256M32D1NP-062 AAT:C
β Drop-Inπ Reference alternative (not in catalog)
K4UBE3D4AA-MGCL
β Drop-Inπ Reference alternative (not in catalog)
H9HCNNNBKMMLBR-NE
β Drop-Inπ Reference alternative (not in catalog)
MT53B256M32D1NP-062 WT:C
β Drop-Inπ Reference alternative (not in catalog)
MT53B256M32D1NP-062 Maximum Ratings & Electrical Characteristics
| Memory Type | Mobile LPDDR4 SDRAM |
| Density | 8 Gbit |
| Organization | 256M x 32 |
| Data Rate | 1.6 GHz (LPDDR4-3200) |
| Supply Voltage (VDD1) | 1.1 V |
| Supply Voltage (VDD2) | 1.8 V |
| I/O Voltage | 1.1 V |
| Package | 200-WFBGA (10x14.5 mm) |
| Operating Temperature | -30Β°C to +85Β°C |
| Data Bus Width | 32 bit |
| Number of Terminals | 200 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| JEDEC Standard | LPDDR4 |
| Minimum Voltage | 1.06 V |
| Maximum Voltage | 1.17 V |
MT53B256M32D1NP-062 Pin Configuration
| Pin A1 | VDD1 β Core power supply 1.1V |
| Pin A2 | DQ0 β Data input/output 0 |
| Pin A3 | DQ1 β Data input/output 1 |
| Pin B1 | VSS β Ground |
| Pin B2 | DQ2 β Data input/output 2 |
| Pin B3 | DQ3 β Data input/output 3 |
| Pin C1 | VDD2 β I/O power supply 1.8V |
| Pin C2 | DQS0_t β Data strobe 0 true |
| Pin C3 | DQS0_c β Data strobe 0 complement |
| Pin D1 | CK_t β Clock true |
| Pin D2 | CK_c β Clock complement |
| Pin D3 | CS β Chip select |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
MT53B256M32D1NP-062 is suitable for 6 applications: Smartphones, Tablets, AI Edge Devices, Automotive Infotainment, Embedded Computing Modules, High-End Consumer Electronics.
Smartphones
The MT53B256M32D1NP-062 provides high-bandwidth, low-power memory for flagship smartphones, enabling smooth multitasking, fast app launches, and efficient power consumption. Its 1.6 GHz data rate and 32-bit bus support demanding applications like 4K video recording and AI-based photography. The LPDDR4 interface ensures compatibility with mobile application processors, while the compact 200-WFBGA package saves PCB space. Power management features like deep power-down extend battery life, making it ideal for portable devices.
Recommended
Tablets
Tablets require a balance of performance and power efficiency. The MT53B256M32D1NP-062 delivers 8Gb capacity and 1.6 GHz speed, supporting high-resolution displays and smooth video playback. Its low-power LPDDR4 design extends battery life, crucial for portable devices. The 200-WFBGA package allows thin form factors. With support for self-refresh and deep power-down, it minimizes standby power, making it suitable for always-on tablets. The device's high bandwidth enables seamless multitasking and gaming experiences.
Recommended
AI Edge Devices
AI edge devices like smart speakers and cameras require fast memory access for neural network inference. The MT53B256M32D1NP-062's 1.6 GHz data rate and 32-bit bus provide the bandwidth needed for real-time processing. Its low power consumption is critical for always-on devices. The LPDDR4 interface supports efficient data transfer to AI accelerators. The compact package enables small form factors. With on-die ECC, it enhances reliability for continuous operation. This memory is ideal for edge AI applications where performance and power are balanced.
Recommended
Automotive Infotainment
Automotive infotainment systems demand high reliability and performance. The MT53B256M32D1NP-062 AIT:C variant is AEC-Q100 qualified, ensuring operation in harsh automotive environments. The standard version can be used in non-critical systems. With 8Gb capacity and 1.6 GHz speed, it supports navigation, multimedia, and connectivity features. The LPDDR4 interface is widely adopted in automotive SoCs. The 200-WFBGA package withstands vibration and temperature extremes. For automotive designs, the AIT:C variant is recommended for its extended temperature range and qualification.
Recommended
Embedded Computing Modules
Embedded computing modules for industrial and IoT applications benefit from the MT53B256M32D1NP-062's low power and high performance. Its 8Gb density supports complex applications like real-time data processing and edge analytics. The 1.6 GHz data rate enables fast communication with processors. The compact package is ideal for module designs. With support for low-power modes, it is suitable for battery-powered IoT devices. The device's reliability and long lifecycle make it a preferred choice for industrial embedded systems.
Recommended
High-End Consumer Electronics
High-end consumer electronics like smart TVs and gaming consoles require high memory bandwidth. The MT53B256M32D1NP-062 provides 8Gb capacity and 1.6 GHz speed, supporting 4K/8K video processing and gaming. Its low power consumption is beneficial for energy-efficient designs. The LPDDR4 interface is compatible with modern application processors. The compact package allows slim designs. With on-die ECC, it ensures data integrity for critical applications. This memory is ideal for premium consumer devices that demand performance and reliability.
Recommended
Recommended Products Summary
Engineering reference data for MT53B256M32D1NP-062 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | MT53B256M32D1NP-062 AIT:C | MT53B256M32D1NP-062 AUT | K4UBE3D4AA-MGCL | H9HCNNNBKMMLBR-NE |
|---|---|---|---|---|---|
| Package | 200-WFBGA (10x14.5) | 200-WFBGA (10x14.5) - same | 200-WFBGA (10x14.5) - same | 200-WFBGA (10x14.5) - same | 200-WFBGA (10x14.5) - same |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Data Rate | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz | 1.6 GHz |
| Operating Temperature | -30Β°C to +85Β°C | -40Β°C to +105Β°C | -40Β°C to +105Β°C | -30Β°C to +85Β°C | -30Β°C to +85Β°C |
| Automotive Grade | No | Yes (AEC-Q100) | Yes (AEC-Q100) | No | No |
| Supply Voltage (VDD1) | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant |
Key Differentiators
- Automotive-grade variants available (vs K4UBE3D4AA-MGCL)
- High data rate of 1.6 GHz (vs H9HCNNNBKMMLBR-NE)
- Multiple packaging options (vs MT53B256M32D1NP-062 WT:C)
Design Notes
For high-speed LPDDR4 signals, maintain controlled impedance of 50 ohms for single-ended and 100 ohms differential for DQS and CK pairs. Keep trace lengths matched within 0.5mm for data and strobe groups. Use ground planes beneath the memory to reduce noise and ensure signal integrity.
Decouple VDD1 and VDD2 with 0.1uF and 1uF capacitors placed as close as possible to the power pins. Use a 4.7uF bulk capacitor on the VDD1 rail. Ensure the power supply can handle transient currents during read/write operations, which can exceed 1A.
The MT53B256M32D1NP-062 dissipates up to 1.5W during heavy operation. Ensure adequate airflow or a thermal pad to the PCB to keep the case temperature below 85Β°C. For automotive variants, the temperature range is extended, but thermal management is still critical.
Compliance Information
RoHS compliant per distributor listings. AEC-Q100 not qualified for standard version; use AIT:C or AUT for automotive.
