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FM25CL64B-GTR - 64Kb SPI F-RAM Memory, 20MHz, 8-SOIC | Infineon
The Infineon FM25CL64B-GTR is a 64-Kbit (8K × 8) ferroelectric non-volatile RAM (F-RAM) with a high-speed SPI bus interface, housed in an 8-pin SOIC (G) package rated for industrial -40°C to +85°C operation. It supports 20 MHz maximum SPI clock frequency, 3.0 V to 3.6 V single supply operation, and delivers up to 10^14 read/write endurance cycles with NoDelay™ writes that complete in zero wait-states, eliminating the page-mode and write-cycle delays of serial EEPROM. What is F-RAM? Ferroelectric RAM (F-RAM, also called FeRAM) is a non-volatile memory technology that combines the fast, byte-level write capability and unlimited endurance of SRAM with the non-volatile data retention of flash or EEPROM. F-RAM stores data by polarizing a ferroelectric capacitor rather than trapping charge, which yields 10^14 endurance cycles (vs. ~1M for EEPROM) and writes that complete at bus speed without an erase-before-write cycle. In the broader taxonomy, F-RAM sits under non-volatile memory → random-access non-volatile memory → serial non-volatile memory (vs. EEPROM, MRAM, nvSRAM). Key features of the FM25CL64B-GTR include hardware/software drop-in compatibility with industry-standard 25xxx serial EEPROM footprints and command sets, low active current consumption, deep power-down mode via the /S pin, and a hardware write-protect (/WP) pin that protects the upper quadrant of the memory array. The device is also RoHS compliant and qualified to the Infineon/Cypress F-RAM reliability standards. Technically, the FM25CL64B-GTR uses a ferroelectric PZT (lead zirconate titanate) storage capacitor cell per bit and integrates a high-speed SPI slave controller with FIFO buffering. Because F-RAM cells do not need pre-conditioning before writing, the device delivers true byte-level writes at full bus speed, making it suitable for redundant data capture and high-write-rate logging applications. Typical applications include industrial metering (electricity, gas, water), data logging in factory automation, automotive subsystems, RAID storage write-cache, black-box recorders, and any system that requires EEPROM-like non-volatile storage but writes too frequently for conventional EEPROM endurance. The wide operating temperature range makes the part suitable for outdoor industrial equipment and automotive under-hood designs. When designing with this device, keep in mind that the FM25CL64B-GTR is a SPI-mode-only part. If the host bus is I²C, choose the FM24CL64B-GTR instead; if 5 V-only operation is required, consider the FM25640B-GTR family. The -G suffix denotes the 8-SOIC (208-mil) package, and -TR denotes tape-and-reel packaging. This page synthesizes distributor pricing, SPI pinout diagrams, and drop-in alternative guidance not found on the bare manufacturer datasheet, helping design engineers compare the FM25CL64B-GTR against EEPROM and other F-RAM options in a single view.
GS8642Z36GB-250I - 72Mb Sync ZBT SRAM 250MHz 119-FPBGA | GSI
The GSI Technology GS8642Z36GB-250I is a 72 Mbit synchronous pipelined/flow-through Zero Bus Turnaround (ZBT) SRAM organized as 2M x 36 bits, housed in a 119-ball Fine-pitch BGA (119-FPBGA, 22x14 mm) package. The part operates from a 2.5 V or 3.3 V supply and supports a 250 MHz parallel interface, delivering clock-to-data access times as fast as 6.5 ns (flow-through) and 2.5 ns (pipelined). The ZBT architecture eliminates the wasted bus cycles inherent to standard SRAMs and is targeted at networking infrastructure where deterministic read/write turnaround is required. A Zero Bus Turnaround (ZBT) SRAM is a synchronous static memory device that allows the data bus to switch direction between read and write operations without inserting idle (deselect) cycles, thereby utilizing 100% of the available bus bandwidth. ZBT sits within the broader family of synchronous SRAMs (sync SRAM) and is a subclass of network-optimized memories used in routers, switches, and base-station line cards where sustained throughput on packet buffers and look-up tables is critical. Key features of the GS8642Z36GB-250I include HSTL-compatible I/O, on-chip delay-line matching for clock and data edges, byte-write enable controls (BWa# through BWd#) for partial-word operations, an active-low chip enable (ZZ#) for low-power standby, and an industrial operating temperature grade (the suffix "I"). The 2Mx36 word width is well matched to 36-bit datapaths in ASICs, NPUs, and traffic-manager ICs, and the JTAG boundary-scan port supports board-level test. The device is fabricated in a CMOS process with a 6-transistor (6T) memory cell and uses a pipelined or flow-through internal architecture selected by mode pins, giving designers the ability to trade latency for operating frequency. The 119-FPBGA package is optimized for high-density SMT assembly and provides a low-inductance power/ground distribution that supports the 250 MHz clock rate without excessive SSO noise. Synchronous clocking, registered outputs, and ZBT hand-off together remove the one-cycle dead time that legacy async SRAMs impose on tightly-coupled CPU buses. Typical applications for the GS8642Z36GB-250I include network switch/router data-plane packet buffers, ATM/SONET/SDH line-card FIFOs, high-speed lookup-table memory for CAM co-processors, and ASIC/NPU scratch-pad buffers. Designers also deploy this part in high-end imaging and DSP engines where 36-bit pixel or coefficient words are common. The wide x36 organization is particularly useful when parallel arithmetic datapaths must be stored and retrieved without byte-stitching glue logic. When designing with this part, observe the 119-FPBGA land-pattern recommendations for solder paste and via-in-pad, provide a low-impedance 2.5 V/3.3 V plane with local 0.1 µF + 10 µF decoupling, and respect the derating curves on VDD vs cycle time. The "I" suffix confirms an industrial -40°C to +85°C operating range; choose the non-"I" variant only for commercial-temperature builds. JTAG should be enabled in production boundary-scan test fixtures but can be left NC for normal operation. This page synthesizes distributor pricing, same-brand drop-in alternatives, design notes, and a comparison matrix not consolidated in the GSI datasheet, helping sourcing engineers and hardware designers validate the GS8642Z36GB-250I for their ZBT SRAM socket.
H5AN4G6NBJR-PBC - 4Gb DDR4 SDRAM 256Mx16 FBGA-96 | SK hynix
The SK hynix H5AN4G6NBJR-PBC is a 4Gb DDR4 SDRAM organized as 268,435,456 words x 16 bits (256M x 16), operating from a 1.2V VDD supply in a 96-ball TFBGA (FBGA-96) package. DDR4 SDRAM (Double Data Rate IV Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR memory family. It transfers data on both rising and falling edges of the clock, and introduces bank groups, a lower 1.2V operating voltage, and dynamic on-chip termination compared to DDR3, delivering higher bandwidth per watt. Within the memory hierarchy, this component is the main-system-memory class of DRAM: DRAM -> DDR4 SDRAM -> volatile memory IC -> semiconductor memory. Key features of the H5AN4G6NBJR family, per the SK hynix datasheet, include fully synchronous operation referenced to both clock edges, internal bank groups for improved parallelism, dynamic on-chip termination (ODT), ZQ calibration, write leveling, CRC and CA parity related features, data mask function, asynchronous reset, and auto self-refresh. The x16 organization simplifies interfacing on 16-bit-wide memory buses common in embedded and industrial designs. Architecturally the device is a 4Gb CMOS DDR4 SDRAM that supports burst, interleaved transactions from a double-data-rate command interface, with programmable CAS latency and burst length per the JEDEC DDR4 specification set referenced in the family datasheet. The FBGA-96 surface-mount package supports automated assembly and high routing density. Typical applications include main memory in embedded systems, industrial controllers, networking equipment, computing modules, and data logging or firmware execution systems requiring large memory density and high bandwidth. Design consideration: DDR4 signal integrity demands length-matched traces, VTT termination, and careful ZQ resistor placement; verify the controller supports the programmed speed grade and CL before layout freeze. This page synthesizes distributor availability, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H5AN4G6NBJR-VKC - 4Gb DDR4 SDRAM 2666Mbps x16 | SK Hynix
The SK Hynix H5AN4G6NBJR-VKC is a 4Gb CMOS DDR4 SDRAM organized as 256M x 16, operating at data rates up to 2666 Mbps (1600 MHz clock), supplied at 1.2V nominal (1.14V to 1.26V range) in a 96-ball FBGA (TFBGA/PBGA96, 13 mm x 10 mm, 0.8 mm ball pitch) package. DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random access memory. As a class of volatile DRAM, DDR4 transfers data on both rising and falling edges of the clock, doubling effective bandwidth versus SDR technology, and occupies a hierarchy from a single memory chip, through DRAM in general, to system main-memory and power-management subsystems. DDR4 lowers operating voltage from the 1.5V of DDR3 to 1.2V, cutting dynamic power while raising density and speed. Key features of the H5AN4G6NBJR-VKC include fully synchronous operation referenced to both clock edges, automatic and self refresh supporting the -40C to +95C operating range, a data mask function, an asynchronous reset input, dynamic on-chip termination (ODT), ZQ calibration, write leveling, and CRC function for link integrity. Architecturally the device is a multi-bank CMOS DRAM using bank-group structure typical of DDR4, enabling fast interleaved accesses. The 16-bit I/O organization suits designs favoring fewer chips per rank and wider buses. The VKC speed grade maps to 2666 Mbps operation with typical supply current of 38 mA, balancing bandwidth and power for embedded platforms. Typical applications include industrial controllers and embedded boards, set-top boxes and networking equipment, and cost-sensitive consumer electronics requiring 4Gb main memory in a compact footprint. Design consideration: DDR4 routing demands length-matched fly-by command/address topology, careful ODT and ZQ resistor placement, and VTT termination supply design; signal integrity at 2666 Mbps is the dominant constraint. This page synthesizes verified distributor pricing, stock data, drop-in family alternatives, and practical design guidance not found in the manufacturer datasheet alone.
H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory
The SK hynix H5AN4G8NBJR-RDC is a 4Gb (512M x 8) CMOS Double Data Rate IV (DDR4) Synchronous DRAM in a 78-ball FBGA package, delivering the high density and bandwidth required for main memory subsystems. The -RDC suffix identifies the operating temperature and speed-grade bin within the H5AN4G4/8/6NBJR family. A DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both edges of the clock (double data rate) and communicates over a point-to-point or multi-drop command/address bus with the memory controller. Within the memory hierarchy, it sits as main system memory between CPU caches and mass storage, and is a member of the broader DRAM > synchronous DRAM > DDR SDRAM family tree, succeeding DDR3 with lower operating voltage, higher data rates, and bank-group architecture. Key features include a 4Gb density organized as 512M words x 8 bits, an internal 8-bank and bank-group (x4/x8: 4 bank groups) architecture that increases effective data rate utilization, and DDR4-class low supply voltage for reduced system power. The device supports the standard DDR4 SDRAM command set including bank-group activation management, making it suitable for memory controllers with DDR4 scheduling. Technical depth: the device uses a CMOS DRAM core with prefetch architecture per the JEDEC DDR4 specification, refreshed internally at standard intervals with self-refresh support for low-power standby. SSTL-12-style signaling on a separate VDD/VDDQ supply domain enables clean signal integrity at DDR4 data rates on the CA and DQ buses, controlled through on-die termination (ODT) and CA parity as defined by the DDR4 standard. Typical applications include desktop and notebook main memory DIMMs and solder-down memory, consumer electronics such as set-top boxes and smart TVs, industrial controllers requiring large memory density, and networking/communication equipment needing high bandwidth per DRAM. Design consideration: DDR4 signal integrity depends heavily on fly-by command/address routing, on-die termination settings, and ZQ calibration resistors; follow the memory controller layout guidelines and verify timing closure at the target data rate. This page synthesizes datasheet references, drop-in alternatives, pricing tiers, and practical design notes not found in a single manufacturer datasheet.
H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix
The SK Hynix H5AN4G8NBJR-UHC is a 4Gb (512M x 8) DDR4 SDRAM operating at 2400 Mbps data rate (PC2400) with a 1.2V supply, packaged in a 78-ball TFBGA (11 x 7.5 mm) lead-free, RoHS-compliant package. It is a consumer-class DDR4 DRAM component for main-memory applications requiring large density and high bandwidth. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family defined by the JEDEC DDR4 standard. It sits within the memory IC hierarchy: DRAM -> synchronous DRAM (SDRAM) -> DDR SDRAM -> DDR4 SDRAM. Compared with DDR3, DDR4 lowers operating voltage from 1.5V/1.35V to 1.2V, doubles bank groups to improve effective bandwidth, and raises data rates up to 3200 Mbps, making it the dominant main-memory technology for embedded and consumer computing platforms. Key features of the H5AN4G8NBJR-UHC include a 4Gb density organized as 512M x 8, DDR4-2400 speed grade operation, 1.2V core supply, and a compact 78-ball FBGA footprint that is pinout-standardized across the DRAM industry, simplifying second-sourcing. The device supports standard DDR4 features such as bank-group architecture, on-die termination, and DLL-based timing per the JEDEC DDR4 specification. Architecturally, the die uses SK Hynix CMOS DRAM process technology with an 8n-class bank structure delivering the 4Gb capacity in the x8 organization. The 78-ball TFBGA package minimizes signal-path length for improved signal integrity at 2400 Mbps, and the ball map follows the JEDEC-standard DDR4 x8 component footprint, which enables drop-in assembly on any DDR4 x8 DIMM or onboard-memory land pattern. Typical applications include consumer desktop and notebook main memory, set-top boxes, smart TVs, networking equipment, industrial control memory, and embedded x86/ARM platforms where 4Gb x8 DDR4 components are populated on-module or on-board. The device is well suited for memory modules and soldered-down memory subsystems alike. When designing this part into a DDR4 subsystem, ensure controller training covers write-leveling, VrefDQ calibration, and read training, and follow the recommended termination and routing rules (length-matched fly-by command/address routing, on-die termination enabled). Verify the exact -UHC speed-grade binning parameters in the manufacturer datasheet before timing closure. This page synthesizes distributor pricing from LCSC/JLCPCB, drop-in DDR4 alternatives across SK Hynix, Micron, and Samsung, and practical DDR4 design notes not found in a single datasheet, giving engineers a complete second-source and design-in reference.
H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix
The SK hynix H5AN4G8NBJR-UHCR is a 4Gb (512M x 8) CMOS DDR4 SDRAM operating at DDR4-2400 with a 1.2V core supply, housed in a 78-ball FBGA package measuring 11 mm x 7.5 mm. The -R suffix denotes tape-and-reel delivery of the same die as the commercial-temperature H5AN4G8NBJR-UHC. A DDR4 SDRAM (Double Data Rate Fourth-Generation Synchronous Dynamic Random Access Memory) is a type of volatile semiconductor memory that transfers data on both clock edges, doubling bandwidth relative to SDR memory at the same clock frequency. Within the memory hierarchy, it sits as main-memory DRAM below CPU caches and above storage, and belongs to the broader category of memory ICs and power-management-adjacent system components in embedded and computing platforms. Key features include 4Gb density organized as 512M x 8, an 8n internal prefetch architecture, industrial-grade temperature support with case temperature maintained from -40C to +85C (extended operation up to 95C case per the manufacturer datasheet), and lead-free, halogen-free RoHS-compliant construction. The UH speed grade targets PC2400-class bandwidth for cost-optimized computing platforms. Technically, the device uses SK hynix CMOS DRAM process technology with bank-group architecture that enables higher effective data rates per clock. Terminated IO (ODT) on-die termination and CA parity support preserve signal integrity at 2400 MT/s across the fly-by command/address topology used on DDR4 DIMMs and solder-down memory buses. Typical applications include industrial PCs and embedded controllers, networking and communication equipment main memory, and set-top box or smart-TV system memory where large density and proven DDR4 interoperability are required. Design consideration: DDR4 layout demands length-matched, fly-by-routed address/command lines and per-byte lane matching; verify controller ZQ calibration and VTT termination budgets before layout freeze. This page synthesizes distributor pricing, drop-in alternatives across SK hynix speed grades, and practical DDR4 design notes not found in the manufacturer datasheet.
H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix
The SK hynix H5AN4G8NBJR-VKIR is a 4Gb CMOS DDR4 Synchronous DRAM (SDRAM) organized as 512M x 8, operating at data rates up to 2666 Mbps per pin from a nominal 1.2V supply, housed in a 78-ball FBGA (Fine-Pitch Ball Grid Array) surface-mount package. The -VKI speed grade with the R suffix denotes tape-and-reel packing for automated assembly. A DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both the rising and falling edges of the clock (Double Data Rate). Within the memory hierarchy, DDR4 sits under the DRAM family, which sits under semiconductor memory, and serves as the high-bandwidth main-memory layer between the processor cache and non-volatile storage such as NAND flash. DDR4 introduced lower operating voltage (1.2V versus 1.5V for DDR3), bank groups, and higher data rates. Key features of the H5AN4G8NBJR-VKIR include 4Gb (gigabit) density in a single die, a wide x8 bus organization suited to 72-bit and 64-bit wide memory subsystems, 2666 Mbps operation for high-bandwidth main memory, and an industrial operating temperature range in which case temperature must be maintained between -40 and +85 degrees C, with extended operation permitted up to 95 degrees C case per the manufacturer datasheet. Architecturally, this part is a member of SK hynix's 4Gb DDR4 NBJR family (H5AN4G4/6/8NBJR series), a CMOS DRAM generation ideally suited for main memory applications requiring large density and high bandwidth. Internal bank-group parallelism enables efficient column access scheduling at DDR4-2666 speeds. Typical applications include server and networking main memory when populated into RDIMM or soldered-down embedded designs, industrial controllers and factory automation requiring -40 to +85 degrees C qualified DRAM, and embedded/telecom platforms needing stable long-life DDR4 sourcing. Design consideration: DDR4 routing requires length-matched address/command and DQ/DQS fly-by topology, 40-ohm on-die termination settings, and VPP (2.5V) and VDDQ (1.2V) rails with adequate decoupling; verify ZQ calibration resistor placement per the datasheet layout guidelines. This page synthesizes verified distributor stock data, drop-in same-family alternatives, and practical sourcing guidance not found in the manufacturer datasheet alone.
H5AN8G4NAFR-UHC - 8Gb DDR4 SDRAM 1.2V | SK Hynix
The SK Hynix H5AN8G4NAFR-UHC is an 8Gb CMOS DDR4 SDRAM organized as 2G x4, operating from a 1.2 V supply in a 78-ball FBGA package, and is supplied lead-free and halogen-free (RoHS compliant). DDR4 SDRAM is the fourth generation of Double Data Rate synchronous dynamic random-access memory, a family of volatile memory ICs that transfers data on both rising and falling edges of the clock. Within the memory hierarchy, DDR4 sits above DDR3 in the SDRAM lineage and serves as the main-memory workhorse for servers, workstations, PCs, and embedded controllers requiring large density and high bandwidth. Key features of this part include the large 8Gb monolithic density from the H5AN8G4NAFR-xxC family, a x4 organization suited to ECC-heavy server DIMMs, and full synchronization of all address and control inputs to a differential clock (CK_t/CK_c) for tightly timed operation. The UHC suffix denotes a SK hynix DDR4 speed-grade bin within the -xxC product family. Architecturally, the device is a CMOS DDR4 SDRAM with internal bank-group parallelism, on-die termination (ODT) and the DDR4 command/address timing discipline described in the SK hynix datasheet (Rev. 1.2, Jul. 2017). Fully synchronous operation referenced to both clock edges allows high sustained bandwidth per device, which is why x4 DDR4 components are the standard building blocks of registered and load-reduced server memory. Typical applications include server main memory modules (RDIMM/LRDIMM), high-density workstation and desktop DIMMs, networking and telecom line-card memory, and industrial systems requiring large, bandwidth-rich DRAM pools. Designers should confirm the exact UHC speed-grade timing parameters, IDD current table, and package ball map from the official SK hynix datasheet before layout, as DDR4 timing closure depends on the controller, topology, and thermal environment. This page synthesizes datasheet data, same-family drop-in speed-grade alternatives, distributor sourcing links, and practical design notes not consolidated in the manufacturer datasheet.
H5AN8G4NCJR-xxC - 8Gb DDR4 SDRAM | SK Hynix
The SK Hynix H5AN8G4NCJR-xxC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, ideally suited for main memory applications requiring large memory density and high bandwidth. It features fully synchronous operation referenced to both rising and falling edges of the clock, with internally pipelined and 8-bit prefetched data paths to achieve very high bandwidth. The device is available in a FBGA package and is lead-free and halogen-free, compliant with RoHS standards. DDR4 SDRAM is a type of synchronous dynamic random-access memory that doubles the data rate of its predecessor DDR3, operating at higher speeds and lower voltages (typically 1.2V). It is the industry standard for main memory in servers, desktops, laptops, and networking equipment, providing the high bandwidth and density required for modern computing workloads. DDR4 memory is part of the broader DRAM family, which includes DDR3, DDR4, and DDR5, and is essential for system performance in applications ranging from cloud computing to artificial intelligence. Key features of the H5AN8G4NCJR-xxC include a density of 8Gb, a data rate that supports high-speed operation (specific speed grade indicated by the xxC suffix), and a FBGA package that enables compact, high-density board designs. The device operates with a 1.2V power supply, reducing power consumption compared to earlier generations. It also supports on-die termination (ODT) and programmable read/write latencies, allowing system designers to optimize signal integrity and timing. Technically, the H5AN8G4NCJR-xxC uses a CMOS process and features an 8n-prefetch architecture, which allows it to transfer 8 data bits per clock cycle per pin, achieving high bandwidth. The device includes auto-refresh and self-refresh modes for low-power standby, and it supports a burst length of 8 (BL8) for efficient data transfer. The FBGA package provides excellent thermal and electrical performance, with a ball pitch that supports high-speed signaling. Typical applications include servers, data centers, networking equipment, and high-performance computing systems where large memory capacity and high bandwidth are critical. The device is also used in consumer electronics such as high-end desktops and gaming consoles, where DDR4 memory is the standard. Its low power consumption and high reliability make it suitable for enterprise storage and cloud infrastructure. When designing with this device, ensure proper signal integrity by following the manufacturer's layout guidelines, including controlled impedance traces and adequate decoupling. The device requires a stable 1.2V power supply and a reference voltage (VREF) for optimal operation. Consider using the on-die termination feature to match impedance and reduce reflections on the data bus.
H5AN8G6NAFR - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix
The H5AN8G6NAFR is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM from SK Hynix, organized as 512M x 16. It operates from a 1.2V supply and is available in a 96-ball FBGA package. This device is designed for main memory applications requiring high density and bandwidth, offering fully synchronous operations referenced to both rising and falling edges of the clock. All addresses and control inputs are latched on the rising edge of CK, and data is transferred on both edges, enabling data rates up to 2400 MT/s. DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It provides higher module density and lower voltage (1.2V vs 1.5V) while delivering increased bandwidth. DDR4 is a key component in modern computing systems, from servers and desktops to embedded and networking equipment, where it serves as the main system memory. The H5AN8G6NAFR is part of the DDR4 SDRAM family, which includes x4, x8, and x16 configurations, and is essential for high-performance computing. Key features include a 1.2V power supply, 8Gb density, 512M x 16 organization, and a 96-ball FBGA package. It supports data rates up to 2400 MT/s (PC4-19200) and includes features such as auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (ODT), ZQ calibration, CRC, and write leveling. The device is lead-free and halogen-free, RoHS compliant, and operates over a temperature range of 0°C to +85°C. Technically, the H5AN8G6NAFR uses a high-performance CMOS process and features a pseudo-open-drain interface for compatibility with DDR4 controllers. It incorporates a DLL (Delay-Locked Loop) to align data output with the clock, and supports on-die termination for improved signal integrity. The device also includes a temperature sensor for auto-refresh rate adjustment, enhancing reliability in varying thermal conditions. Typical applications include servers, data centers, networking equipment, and high-end consumer electronics such as gaming PCs and workstations. Its high density and bandwidth make it ideal for memory-intensive tasks like virtualization, big data analytics, and real-time signal processing. The 1.2V operation reduces power consumption, making it suitable for energy-efficient designs. When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the pins. Follow the DDR4 layout guidelines for impedance matching and signal integrity, and use the ZQ calibration resistor (240 ohm) as specified in the datasheet.
H5AN8G6NAFR-RDC - 8Gb DDR4 SDRAM 512Mx16 | SK Hynix
The SK Hynix H5AN8G6NAFR-RDC is an 8Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 512M x 16, operating from a 1.2V supply in a 96-ball TFBGA (FBGA-96) rectangular package. It delivers the large memory density and high bandwidth required for main-memory applications, with lead-free and halogen-free construction that is RoHS compliant. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in servers, workstations, desktop PCs, and embedded systems. As a memory IC within the DRAM hierarchy, it synchronizes all operations to a clock and transfers data on both clock edges, doubling effective bandwidth versus SDR DRAM. DDR4 raised the bank-group architecture, lowered operating voltage from 1.5V (DDR3) to 1.2V, and increased prefetched data per access to 8n. Key features of this device include 8Gb density in a single die, a 16-bit wide data bus, multi-bank page burst access mode, and DDR4 bank-group architecture that improves effective bandwidth at a given clock rate. The 1.2V core supply significantly reduces memory-subsystem power compared with DDR3 solutions, which matters in density-critical modules and battery-operated equipment. Architecturally, the H5AN8G6NAFR family uses CMOS DRAM core technology with DDR4 signaling, on-die termination support, and a JEDEC-standard DDR4 interface. The -RDC speed grade suffix identifies the speed bin and temperature-range configuration of this variant; consult the SK Hynix datasheet for the exact clock-rate and timing parameters of the -RDC bin. Typical applications include main memory for industrial PCs and embedded controllers, DRAM memory modules (SO-DIMM/DIMM component population), networking equipment buffers, and high-capacity storage caching systems. The x16 organization suits designs that need moderate bus widths with high per-device density. Design consideration: DDR4 routing requires length-matched, impedance-controlled fly-by or tree topologies; verify the controller supports x16 devices and the -RDC speed grade before layout. This page synthesizes datasheet data, distributor listings, and verified drop-in alternatives not consolidated in the manufacturer datasheet.
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix
The SK Hynix H5AN8G6NAFR-UHC is an 8Gbit CMOS DDR4 SDRAM organized as 512M x 16, operating at 1.2V and 2400MT/s data rate, housed in a 96-ball FBGA (TFBGA) surface-mount package. It is ideally suited for main-memory applications requiring large memory density and high bandwidth. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR memory hierarchy, succeeding DDR3. A DRAM stores each bit in a capacitor-based cell and requires periodic refresh; DDR4 doubles bank-group parallelism versus DDR3, lowers operating voltage to 1.2V, and transfers data on both rising and falling clock edges referenced to a differential clock (CK_t/CK_c). Key features of this device include fully synchronous operation referenced to both edges of the differential clock, an asynchronous reset function, auto self-refresh and auto precharge, a data mask (DM) function for byte-wise write masking, dynamic on-chip termination (ODT), ZQ calibration, CRC function, and write leveling. Per LCSC product data, the device operates from 0C to +85C. Architecturally, all address and control input signals are sampled on the crossing of the positive edge of CK_t and negative edge of CK_c, while data is captured relative to data strobes (DQS_t/DQS_c) supporting source-synchronous timing. The 512M x 16 organization provides a 16-bit data width suited to embedded CPUs, industrial controllers, and memory-down designs that avoid DIMM connectors. Typical applications include main memory for embedded and industrial systems, networking equipment, set-top boxes, and high-bandwidth buffer memory in storage and imaging systems where large density and high bandwidth are required. A key design consideration is DDR4 signal integrity: routing length matching of DQ to DQS, ZQ resistor placement, and proper VDDQ termination planning are essential; the dynamic ODT and write-leveling features of this part help manage fly-by command routing on multi-device buses. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 512Mx16 | SK hynix
The H5AN8G6NAFR-UHC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM from SK hynix, organized as 512M x 16 bits. It operates from a 1.2V supply and is available in a 96-ball FBGA package. This device is designed for main memory applications requiring high density and bandwidth, supporting data rates up to 2400 MT/s (PC4-19200). DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both rising and falling edges of the clock, doubling the data rate compared to single-data-rate SDRAM. It is the fourth generation of DDR memory, offering higher speed, lower voltage (1.2V vs 1.5V for DDR3), and improved power efficiency. DDR4 is widely used in servers, desktops, laptops, and embedded systems where high memory bandwidth and capacity are critical. Key features include fully synchronous operation referenced to both clock edges, programmable CAS latency, burst lengths of 8 and 4 (with burst chop), on-die termination (ODT) for signal integrity, and ZQ calibration for improved timing. The device supports auto self-refresh, auto precharge, data mask, write leveling, and CRC error detection, enhancing reliability in high-speed systems. It is lead-free and halogen-free, compliant with RoHS. Architecturally, the H5AN8G6NAFR-UHC uses a 20nm-class process technology, enabling high density with low power consumption. The 512M x 16 organization is ideal for memory modules and embedded applications requiring a 16-bit data bus. The FBGA-96 package provides excellent thermal and electrical performance, with a maximum operating temperature of 85°C. Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), servers, networking equipment, and high-performance computing systems. Its high bandwidth and low latency make it suitable for data-intensive workloads. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 2400 MT/s. The device requires a 1.2V VDD and 2.5V VPP supply for wordline boost.
H5AN8G6NCJR-PBC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK hynix
The SK hynix H5AN8G6NCJR-PBC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as x16, operating at data rates up to 2666 Mbps per pin and housed in a 96-ball FBGA package. It operates from a 1.2V core supply, supports temperatures from 0C to +95C, and is intended for main-memory applications that require large density and high bandwidth. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology in computing systems. A DDR4 DRAM stores data in capacitor-based cells addressed by row and column, synchronizing all operations to a differential clock so data is transferred on both rising and falling clock edges. Within the memory hierarchy, the DRAM sits between CPU caches and storage, forming the working memory of servers, PCs, and embedded controllers. Key features include fully synchronous operation referenced to both clock edges, auto self-refresh and auto precharge, an asynchronous reset function, data mask for partial writes, write leveling for fly-by topology signal integrity, CRC and CA parity protection, dynamic on-die termination (ODT), and ZQ calibration for output impedance matching. These functions enable reliable high-speed operation on multi-drop DDR4 memory buses. The device uses SK hynix advanced CMOS DRAM process technology in a monolithic 8Gb die. Bank-group architecture with per-bank-group activation allows back-to-back data access with reduced turnaround overhead, sustaining the effective bandwidth needed by 64-bit multi-DIMM or soldered-down memory subsystems. Internal bank interleaving and programmable CAS latency let system controllers optimize for either latency or throughput. Typical applications include embedded PC main memory, industrial computing and gateways, networking equipment line cards, set-top boxes and smart TV platforms, and test-and-measurement systems that use soldered-down DDR4. Design consideration: DDR4 fly-by routing requires careful length matching of the clock/address/command bus, per-byte ODT and drive-strength tuning through mode registers, and a clean 1.2V rail with adequate decoupling to support simultaneous switching output noise. This page adds value beyond the datasheet by compiling verified distributor stock, drop-in alternatives from the same footprint, and practical layout and selection guidance for the H5AN8G6NCJR-PBC.
H5AN8G6NCJR-RDC - 8Gb DDR4 SDRAM 512Mx16 TFBGA-96 | SK hynix
The SK hynix H5AN8G6NCJR-RDC is an 8Gb (512Mx16) CMOS Double Data Rate 4 (DDR4) Synchronous DRAM in a 96-ball TFBGA (PBGA96) rectangular package. It delivers DDR4-class bandwidth with fully synchronous operation referenced to both rising and falling edges of the clock, and is ideally suited for main-memory applications that require large memory density and high bandwidth. DDR4 SDRAM is a type of dynamic random-access memory that replaced DDR3 in the DRAM hierarchy. As a member of the broader semiconductor memory family (DRAM -> synchronous DRAM -> DDR SDRAM -> DDR4 SDRAM), it transfers data on both clock edges, uses a lower operating voltage than DDR3, and integrates bank-group architectures to boost effective bandwidth in embedded and compute systems. Key features of the H5AN8G6NCJR family include auto self-refresh, auto precharge, asynchronous reset, data mask (DM), write leveling, CRC, dynamic on-chip termination (ODT), and ZQ calibration, per SK hynix product data. The 512Mx16 organization allows a single 8Gb device to populate a 16-bit-wide memory bus, reducing component count in cost-sensitive designs. Architecturally, the device offers fully synchronous operation referenced to both edges of the differential clock, internal bank-group parallelism, and programmable termination for signal integrity at DDR4 data rates. The CMOS process supports industrial-grade main memory subsystems with high bandwidth density per square centimeter of PCB area. Typical applications include embedded main memory for industrial controllers, networking equipment line cards, set-top boxes, and memory modules or soldered-down memory in x86/ARM compute platforms where a x16 DDR4 device is required. When designing this part in, observe DDR4 fly-by termination topology, route address/command with matched lengths, and verify ZQ calibration resistor placement per JEDEC DDR4 layout practice for best signal integrity. This page synthesizes distributor pricing, drop-in same-package alternatives, practical design notes, and comparison data not found in the SK hynix datasheet, giving engineers a single decision-ready reference for the H5AN8G6NCJR-RDC.
H5AN8G6NCJR-VKC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
The SK Hynix H5AN8G6NCJR-VKC is a high-performance 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, organized as 512M x 16, operating at a data rate of 2666 Mbps (PC4-2133). It is designed for main memory applications requiring large memory density and high bandwidth, such as servers, networking equipment, and high-end computing systems. The device operates from a 1.2V supply (VDD) with a range of 1.14V to 1.26V, and features a 96-ball FBGA package (FBGA-96) for compact, high-density board layouts. DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It offers higher speed, lower operating voltage (1.2V vs 1.5V for DDR3), and improved signal integrity through on-die termination (ODT) and data bus inversion (DBI). DDR4 is the industry standard for main memory in servers, desktops, laptops, and embedded systems, providing the bandwidth and capacity required for modern computing workloads. Key features include a burst length of 8 (BL8) with burst chop (BC4), programmable CAS latency, write leveling, dynamic on-chip termination (Dynamic ODT), ZQ calibration, and CRC (cyclic redundancy check) for data integrity. The device supports auto self-refresh, auto precharge, asynchronous reset, and data mask functions, ensuring reliable operation in demanding environments. It operates over a temperature range of 0°C to +95°C (TC), making it suitable for commercial and industrial applications. The H5AN8G6NCJR-VKC utilizes advanced CMOS process technology, achieving low power consumption with a typical operating current of 28mA (IDD2N) and 45mA (IDD4R). The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm, enabling high-speed signal routing. The device is lead-free and halogen-free, complying with RoHS and REACH regulations. Typical applications include server main memory, networking switches and routers, high-performance computing (HPC), and embedded systems requiring high-density, high-bandwidth memory. The 2666 Mbps data rate and 8Gb density make it ideal for memory modules (DIMMs) and system-on-module (SoM) designs. When designing with this device, ensure proper decoupling of the VDD and VDDQ supplies with 0.1uF and 1uF capacitors placed close to the balls. Follow the DDR4 JEDEC standard (JESD79-4) for signal integrity and layout guidelines, including controlled impedance traces and matched lengths for the data, address, and command buses.
H5AN8G6NCJR-xxC - 8Gb DDR4 SDRAM 2666Mbps | SK Hynix
The H5AN8G6NCJR-xxC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM from SK Hynix, designed for main memory applications requiring high storage density and high bandwidth. It operates with fully synchronous timing referenced to both rising and falling edges of the clock, with all address and control inputs latched on the rising edge of CK, while data, data strobe, and write data are synchronized to both edges. This device is part of the H5AN8G4NCJR-xxC, H5AN8G8NCJR-xxC, and H5AN8G6NCJR-xxC family, all sharing the same 8Gb density and DDR4 architecture. DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, doubling the data rate compared to single-data-rate SDRAM. It is the industry standard for main memory in servers, desktops, laptops, and high-performance computing systems, offering higher bandwidth and lower power consumption than its predecessor DDR3. DDR4 operates at lower voltages (1.2V typical) and supports higher densities, making it essential for modern computing platforms. Key features of the H5AN8G6NCJR-xxC include a data rate of 2666 Mbps (as indicated by the 'VKC' speed grade), a 1.2V power supply, and a x16 organization (8Gb density organized as 512M x 16). The device supports standard DDR4 features such as on-die termination (ODT), programmable read/write latencies, and burst lengths of 8 and 4 with burst chop. It is available in a 96-ball FBGA package, which is the standard for DDR4 memory components. The H5AN8G6NCJR-xxC utilizes advanced CMOS process technology, enabling high-speed operation with low power consumption. The device includes a temperature-compensated self-refresh (TCSR) feature to reduce power in idle states, and supports a wide operating temperature range from 0°C to 95°C (TC) for standard operation. The memory is organized into 8 banks, providing efficient access patterns for high-bandwidth applications. Typical applications include server main memory, desktop and laptop RAM modules, networking equipment, and high-performance embedded systems. The high density and bandwidth make it suitable for data-intensive workloads such as cloud computing, virtualization, and real-time analytics. The device is also used in memory modules (DIMMs/SO-DIMMs) for consumer and enterprise computing. When designing with this component, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.2V supply and a separate VPP supply of 2.5V for wordline boost. Refer to the SK Hynix datasheet for detailed timing parameters and AC/DC operating conditions.
H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
The SK hynix H5AN8G6NDJR is a 8Gb CMOS Double Data Rate 4 (DDR4) Synchronous DRAM organized as 512M x 16, operating at 3200 Mbps (DDR4-3200) with a 1.2V supply. It is housed in a 96-ball FBGA package (13mm x 7.5mm) and is designed for high-density, high-bandwidth main memory applications in computing, networking, and industrial systems. DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing. Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments. The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations. Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators. When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix
The SK Hynix H5AN8G6NDJR-UHC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM, organized as 512M x 16, ideally suited for main memory applications requiring large memory density and high bandwidth. It operates at a speed grade of 3200Mbps (PC4-25600) and is supplied in a 96-ball FBGA package (13x7.5mm). DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3 with higher density, lower operating voltage (1.2V vs 1.5V), and improved signal integrity through on-die termination (ODT) and data bus inversion. As a volatile memory type, it stores data in capacitors that require periodic refreshing, and it transfers data on both edges of the clock signal, doubling throughput. DDR4 is the industry standard for main memory in servers, desktops, laptops, and high-performance embedded systems. Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, power efficiency, and reliability in high-speed systems. The device supports a maximum operating temperature of 85°C and is lead-free and halogen-free, compliant with RoHS. Architecturally, the H5AN8G6NDJR-UHC uses a 1x-nm class process technology, achieving high density with low power consumption. The 16-bit I/O configuration (x16) is ideal for applications requiring moderate bus width with high capacity per chip, reducing the number of devices needed on a memory module. The 96-ball FBGA package with a rectangular shape (JESD-30 code R-PBGA-B96) provides excellent thermal and electrical performance. Typical applications include DDR4 memory modules (UDIMM, SODIMM, RDIMM), embedded computing systems, networking equipment, industrial PCs, and high-performance computing platforms. The 3200Mbps speed grade supports demanding workloads such as data analytics, virtualization, and real-time signal processing. When designing with this device, ensure proper VDD (1.2V) and VDDQ decoupling with 0.1uF and 1uF capacitors placed close to the balls. Follow the JEDEC DDR4 layout guidelines for impedance matching and signal integrity, and use the ZQ pin with a 240-ohm resistor to ground for calibration.
H5AN8G6NDJR-XNC - 8Gb DDR4-3200 x16 DRAM | SK Hynix
The SK Hynix H5AN8G6NDJR-XNC is an 8Gb CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as 512M x16, operating at a data rate of 3200 Mbps (DDR4-3200). It is housed in a 96-ball FBGA package (13x7.5 mm) and is designed for main memory applications requiring high density and bandwidth. The device supports a supply voltage of 1.2V (VDD) with a maximum of 1.26V, and features auto self-refresh, auto precharge, data mask, dynamic on-chip termination (DTC), ZQ calibration, CRC, write leveling, and asynchronous reset functions. DDR4 SDRAM is a type of volatile random-access memory that transfers data on both edges of the clock, doubling the data rate compared to DDR3. It operates at lower voltages (1.2V) and higher speeds, making it essential for modern computing systems, servers, and embedded applications. As a memory IC, it falls under the hierarchy of DRAM -> SDRAM -> DDR4 -> memory IC -> semiconductor, and is a critical component for data storage and processing. Key features include a 512M x16 organization, 3200 Mbps data rate, 1.2V supply, and a 96-ball FBGA package. The device supports various functions such as auto self-refresh and ZQ calibration, which enhance reliability and signal integrity. The x16 interface allows for high bandwidth per chip, making it suitable for applications requiring wide data paths. Technically, the H5AN8G6NDJR-XNC uses a CMOS process and is fully synchronous, with a differential clock (CK_t/CK_c) and on-die termination for improved signal quality. It supports burst lengths of 8 and 4, and includes a programmable read latency (RL) and write latency (WL) for system optimization. The device also features a temperature-compensated self-refresh (TCSR) to reduce power consumption. Typical applications include laptop and desktop memory upgrades, industrial controllers, networking equipment, and embedded systems. Its high density and speed make it ideal for applications requiring large memory capacity and fast data access, such as AI edge devices and high-performance computing. When designing with this component, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines for DDR4 routing to maintain signal integrity. The device is RoHS compliant and lead-free, making it suitable for environmentally conscious designs.
H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix
The SK Hynix H5AN8G8NCJR-RDC is an 8Gb (1GB) CMOS Double Data Rate IV (DDR4) Synchronous DRAM organized as x8, operating at 1.2V with data rates up to 2666 Mbps, housed in a 78-ball FBGA package. DDR4 SDRAM is the fourth generation of double-data-rate synchronous dynamic random-access memory, the dominant main-memory technology for servers, workstations, and high-end computing platforms. Within the memory hierarchy, DDR4 sits between the CPU cache and storage, providing the large density and high bandwidth that modern processors demand. DDR4 improved on DDR3 by lowering operating voltage from 1.5V to 1.2V, doubling bank groups to eight, and raising maximum data rates, which reduces system power while increasing effective bandwidth. The H5AN8G8NCJR family offers fully synchronous operation referenced to both rising and falling edges of the clock, with all addresses and control inputs registered on the rising edge of CK. Key features include 8Gb density in a single die, x8 organization, on-die termination (ODT), data mask (DM) support, and JEDEC-standard DDR4 command set. The -RDC suffix denotes the 2666 Mbps speed grade with a commercial operating temperature range. Architecturally, the device uses internal bank groups to allow interleave-friendly access patterns, and a PLL-free design with DLL for output timing alignment. Burst lengths of 8 (BL8) with sequential and interleave options, plus programmable CAS latency, let memory controllers optimize latency versus throughput. The 78-ball FBGA surface-mount package minimizes parasitic inductance, supporting high-speed signal integrity on fly-by-terminated DDR4 channels. Typical applications include server DIMMs and memory-down designs, workstations, industrial computing, networking equipment, and embedded systems requiring large memory density with high bandwidth. The x8 organization suits ECC-based server designs using x8-based chipkill implementations. Design consideration: DDR4 fly-by routing requires length-matched traces, VTT termination, and careful controller training; always validate the speed-grade suffix (-RDC versus -XNC or -VKC) against your controller's supported data rate. This page synthesizes distributor availability, drop-in alternatives within the SK Hynix 8Gb DDR4 family, and JEDEC-compatible cross-brand equivalents, plus practical design notes not found in the raw datasheet.
H5AN8G8NCJR-VKI - DDR4 8Gb 2666Mbps DRAM | SK hynix
The SK hynix H5AN8G8NCJR-VKI is an 8Gb DDR4 SDRAM DRAM chip organized as 1G x8, operating at 2666 Mbps data rate from a 1.2 V supply, housed in a 78-ball FBGA package. It is an industrial-grade ("I" temperature suffix) volatile memory component for main memory and embedded storage designs. DDR4 SDRAM is a synchronous dynamic random-access memory that transfers data on both clock edges (double data rate), providing high bandwidth for processors and SoCs. Within the memory hierarchy it sits as volatile main memory, below non-volatile flash storage and above cache, and is a core building block of power management and memory subsystem design in computing platforms. Key features of the H5AN8G8NCJR-VKI include the 8Gb (1G x8) density, a 2666 Mbps data rate (PC4-21300 class), a 1.2 V core supply that reduces power versus DDR3's 1.5 V, and the compact 78-ball FBGA surface-mount package suited to dense memory layouts. The industrial operating range supports extended-temperature designs where commercial-only DRAM is unsuitable. Technically, the part belongs to the H5AN8G8NCJR-xxC/xI DDR4 SDRAM family, which SK hynix documentation describes as an 8Gb CMOS Double Data Rate IV synchronous DRAM ideally suited for main memory applications requiring large memory density and high bandwidth. The x8 organization allows 78-ball packaging with fewer data lines per device, simplifying layout for 64-bit or ECC-enabled memory controllers. Typical applications include industrial controllers, computing modules, networking equipment, servers, and embedded systems where stable DDR4 sourcing still matters. The industrial grade supports factory automation and edge-computing platforms exposed to harsher thermal environments. When designing with this device, verify controller speed-grade compatibility (2666 Mbps), budget termination and VTT power for the DDR4 bus, and follow SK hynix layout guidance for fly-by clock routing and decoupling on the 1.2 V rail. This page synthesizes distributor stock and pricing data, same-family and cross-brand drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
H5AN8G8NCJR-XNC - 8Gb DDR4-3200 SDRAM, x8, FBGA-78 | SK hynix
The SK hynix H5AN8G8NCJR-XNC is an 8 Gbit DDR4 SDRAM memory IC organized as 1 Gb x 8, rated at the DDR4-3200 speed grade (3200 Mbps data rate, 1.6 GHz clock), operating from a 1.14 V to 1.26 V supply (1.2 V nominal) over a 0 C to +85 C commercial temperature range in a 78-ball FBGA package measuring 7.5 mm x 11 mm. DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the JEDEC DDR memory family. It transfers data on both rising and falling clock edges and introduces a bank-group architecture with multiple internal banks per group, allowing higher effective bandwidth than DDR3 at lower operating voltage. In the system hierarchy, it sits as main-system memory below CPU cache and above storage such as NAND flash and eMMC. Key features of this device include fully synchronous operation referenced to both clock edges, auto self-refresh, auto precharge, an asynchronous reset function, dynamic on-chip termination (ODT), ZQ calibration, write leveling, CRC and CA parity support, and a data mask function. These capabilities simplify high-speed board design and maintain signal integrity at 3200 Mbps rates. The XNC speed grade and its bank-group architecture allow the memory controller to issue commands to different bank groups back-to-back, maximizing effective bandwidth in mainstream DDR4-3200 channels. Low 1.2 V operation reduces power versus DDR3 at equivalent bandwidth, while per-ball power figures of approximately 30 mA and 39 mA (per LCSC/JLCPCB listing) reflect efficient dynamic and standby behavior. Typical applications include desktop and embedded computing main memory, networking equipment line-card memory, industrial controllers, data-storage and logging subsystems, and replacement sourcing for end-of-life DRAM lines in servers and telecom platforms. Design considerations: at DDR4-3200, fly-by routing with per-DIMM or per-component ODT calibration is essential; verify ZQ resistor placement and controller ODT settings, and confirm that the operating temperature stays within the 0 C to +85 C range or enable auto self-refresh derating above 85 C. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.