H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix
Артикул: H5AN8G6NDJR ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $45.11 | $45,11 |
| 10 | $42.5 | $425,00 |
| 100 | $39.8 | $3.980,00 |
| 500 | $37.2 | $18.600,00 |
| 1.000 | $35 | $35.000,00 |
H5AN8G6NDJR Обзор
DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, succeeding DDR3. It achieves higher speed and lower power consumption through a prefetch of 8n, on-die termination (ODT), and a lower operating voltage of 1.2V compared to DDR3's 1.5V. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in servers, PCs, and embedded computing.
Key features include auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic on-chip termination (Dynamic ODT), ZQ calibration, CRC (cyclic redundancy check), and write leveling. These features enhance signal integrity, reliability, and power efficiency, making the device suitable for high-speed data transmission and robust operation in demanding environments.
The device supports a burst length of 8 and a burst chop of 4, with a CAS latency of 22 cycles at 3200 Mbps. It operates over a temperature range of 0°C to 85°C (TC) and is RoHS compliant. The 96-ball FBGA package with a 0.8mm ball pitch enables compact PCB layouts, while the 1.2V supply reduces power consumption compared to previous generations.
Typical applications include main memory for servers, high-performance computing, networking equipment, and industrial control systems. The high density and bandwidth make it ideal for applications requiring large memory capacity and fast data throughput, such as data centers and AI accelerators.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to maintain signal integrity at 3200 Mbps. The ZQ calibration pin requires a 240-ohm resistor to ground for correct impedance calibration.
Аналоги без доработки для H5AN8G6NDJR — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с H5AN8G6NDJR (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Operating Temperature, Memory Size, Burst Length.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
H5AN8G6NDJR-XNC
✅ Прямая замена✓ В наличии
$55.6818 / шт.
Открыть даташит →H5AN8G6NCJR-xxC
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$6.5 / шт.
Открыть даташит →K4A8G165WB-BCTD
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$37 / шт.
Открыть даташит →MT40A512M16TB-062E:R
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$60 / шт.
Открыть даташит →K4A8G165WB-BCRC
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$12.57 / шт.
Открыть даташит →MT40A512M16TB-062E:IT
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
H5AN8G6NDJR Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Density | 8 Gb |
| Организация памяти | 512M x 16 |
| Скорость передачи данных | 3200 Mbps (DDR4-3200) |
| Напряжение питания | 1.2 V |
| Корпус | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | 96 |
| Maximum Supply Voltage (Vsup) | 1.26 V |
| Maximum Operating Temperature | 85 °C |
| Burst Length | 8 (BL8), 4 (BC4) |
| Задержка CAS | 22 cycles (at 3200 Mbps) |
| Access Mode | Multi Bank Page Burst |
| JESD-30 Code | R-PBGA-B96 |
| RoHS | Compliant |
| Особенности | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |
Конфигурация выводов H5AN8G6NDJR
| Контакт A1 | VDD — Power supply (1.2V) |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт A4 | VSS — Ground |
| Контакт A5 | DQ2 — Data input/output 2 |
| Контакт A6 | DQ3 — Data input/output 3 |
| Контакт A7 | VDD — Power supply (1.2V) |
| Контакт A8 | DQ4 — Data input/output 4 |
| Контакт A9 | DQ5 — Data input/output 5 |
| Контакт A10 | VSS — Ground |
| Контакт A11 | DQ6 — Data input/output 6 |
| Контакт A12 | DQ7 — Data input/output 7 |
| Контакт B1 | VSS — Ground |
| Контакт B2 | DQ8 — Data input/output 8 |
| Контакт B3 | DQ9 — Data input/output 9 |
| Контакт B4 | VDD — Power supply (1.2V) |
| Контакт B5 | DQ10 — Data input/output 10 |
| Контакт B6 | DQ11 — Data input/output 11 |
| Контакт B7 | VSS — Ground |
| Контакт B8 | DQ12 — Data input/output 12 |
| Контакт B9 | DQ13 — Data input/output 13 |
| Контакт B10 | VDD — Power supply (1.2V) |
| Контакт B11 | DQ14 — Data input/output 14 |
| Контакт B12 | DQ15 — Data input/output 15 |
| Контакт C1 | VDD — Power supply (1.2V) |
| Контакт C2 | DQS0 — Data strobe 0 |
| Контакт C3 | DQS0# — Data strobe 0 complement |
| Контакт C4 | VSS — Ground |
| Контакт C5 | DQS1 — Data strobe 1 |
| Контакт C6 | DQS1# — Data strobe 1 complement |
| Контакт C7 | VDD — Power supply (1.2V) |
| Контакт C8 | DQS2 — Data strobe 2 |
| Контакт C9 | DQS2# — Data strobe 2 complement |
| Контакт C10 | VSS — Ground |
| Контакт C11 | DQS3 — Data strobe 3 |
| Контакт C12 | DQS3# — Data strobe 3 complement |
| Контакт D1 | VSS — Ground |
| Контакт D2 | DM0 — Data mask 0 |
| Контакт D3 | DM1 — Data mask 1 |
| Контакт D4 | VDD — Power supply (1.2V) |
| Контакт D5 | DM2 — Data mask 2 |
| Контакт D6 | DM3 — Data mask 3 |
| Контакт D7 | VSS — Ground |
| Контакт D8 | A0 — Address input 0 |
| Контакт D9 | A1 — Address input 1 |
| Контакт D10 | VDD — Power supply (1.2V) |
| Контакт D11 | A2 — Address input 2 |
| Контакт D12 | A3 — Address input 3 |
| Контакт E1 | VDD — Power supply (1.2V) |
| Контакт E2 | A4 — Address input 4 |
| Контакт E3 | A5 — Address input 5 |
| Контакт E4 | VSS — Ground |
| Контакт E5 | A6 — Address input 6 |
| Контакт E6 | A7 — Address input 7 |
| Контакт E7 | VDD — Power supply (1.2V) |
| Контакт E8 | A8 — Address input 8 |
| Контакт E9 | A9 — Address input 9 |
| Контакт E10 | VSS — Ground |
| Контакт E11 | A10/AP — Address input 10 / auto precharge |
| Контакт E12 | A11 — Address input 11 |
| Контакт F1 | VSS — Ground |
| Контакт F2 | A12 — Address input 12 |
| Контакт F3 | A13 — Address input 13 |
| Контакт F4 | VDD — Power supply (1.2V) |
| Контакт F5 | A14 — Address input 14 |
| Контакт F6 | A15 — Address input 15 |
| Контакт F7 | VSS — Ground |
| Контакт F8 | BA0 — Bank address 0 |
| Контакт F9 | BA1 — Bank address 1 |
| Контакт F10 | VDD — Power supply (1.2V) |
| Контакт F11 | BA2 — Bank address 2 |
| Контакт F12 | BG0 — Bank group 0 |
| Контакт G1 | VDD — Power supply (1.2V) |
| Контакт G2 | BG1 — Bank group 1 |
| Контакт G3 | CK — Clock input |
| Контакт G4 | CK# — Clock input complement |
| Контакт G5 | VSS — Ground |
| Контакт G6 | CKE — Clock enable |
| Контакт G7 | VDD — Power supply (1.2V) |
| Контакт G8 | CS# — Chip select |
| Контакт G9 | RAS# — Row address strobe |
| Контакт G10 | VSS — Ground |
| Контакт G11 | CAS# — Column address strobe |
| Контакт G12 | WE# — Write enable |
| Контакт H1 | VSS — Ground |
| Контакт H2 | ODT0 — On-die termination 0 |
| Контакт H3 | ODT1 — On-die termination 1 |
| Контакт H4 | VDD — Power supply (1.2V) |
| Контакт H5 | RESET# — Asynchronous reset |
| Контакт H6 | VSS — Ground |
| Контакт H7 | VDD — Power supply (1.2V) |
| Контакт H8 | ZQ — ZQ calibration |
| Контакт H9 | VSS — Ground |
| Контакт H10 | VDD — Power supply (1.2V) |
| Контакт H11 | VSS — Ground |
| Контакт H12 | VDD — Power supply (1.2V) |
Типичное применение
H5AN8G6NDJR подходит для 6 применениеs: Server Main Memory, Networking Equipment, Industrial Control Systems, High-Performance Computing, Embedded Systems, Data Center Storage.
Server Main Memory
The H5AN8G6NDJR provides 8Gb density and 3200 Mbps bandwidth, making it ideal for server main memory. Its high speed and low power (1.2V) enhance server performance and energy efficiency. In a server DIMM, multiple devices are combined to achieve the desired capacity and ECC support. The x16 organization allows for high bandwidth per chip, reducing the number of devices needed for a given capacity. The device's auto self-refresh and dynamic ODT features improve signal integrity and reliability in multi-rank configurations. When designing server memory, ensure proper termination and layout to maintain signal integrity at 3200 Mbps.
Рекомендуется
Networking Equipment
In networking equipment such as routers and switches, the H5AN8G6NDJR provides high-bandwidth memory for packet buffering and forwarding tables. Its 3200 Mbps data rate ensures fast processing of network traffic, while the 1.2V supply reduces power consumption in always-on equipment. The device's CRC feature enhances data integrity, critical for network reliability. The compact FBGA-96 package allows for dense PCB layouts, saving board space. When used in networking designs, consider the thermal environment and ensure adequate cooling to maintain the 0°C to 85°C operating range.
Рекомендуется
Industrial Control Systems
The H5AN8G6NDJR is suitable for industrial control systems requiring reliable, high-density memory. Its wide operating temperature range (0°C to 85°C) and features like auto self-refresh and write leveling ensure stable operation in harsh environments. The device's low power consumption is beneficial for systems with limited power budgets. In industrial applications, the memory is often used for data logging, real-time control, and HMI interfaces. The FBGA-96 package is robust and suitable for vibration-prone environments. Designers should ensure proper power decoupling and follow layout guidelines to minimize noise.
Рекомендуется
High-Performance Computing
In HPC systems, the H5AN8G6NDJR delivers the high bandwidth and capacity needed for complex simulations and data analysis. Its 3200 Mbps data rate and 8Gb density enable large memory pools with fast access times. The device's low latency and high throughput are critical for parallel processing workloads. The x16 organization allows for efficient memory channel utilization. When designing HPC memory subsystems, consider the total memory bandwidth and capacity requirements, and ensure the memory controller supports the device's timing parameters.
Рекомендуется
Embedded Systems
The H5AN8G6NDJR is used in embedded systems requiring high-density memory with low power consumption. Its 1.2V supply and auto self-refresh feature help extend battery life in portable devices. The compact FBGA-96 package is ideal for space-constrained designs. The device's features like data mask and write leveling support reliable operation in embedded applications. When integrating this memory, ensure the host processor's memory controller is compatible with DDR4-3200 and the x16 organization.
Рекомендуется
Data Center Storage
In data center storage systems, the H5AN8G6NDJR provides high-speed memory for caching and metadata management. Its high bandwidth and low latency improve storage performance, while the 1.2V supply reduces power consumption in large-scale deployments. The device's CRC feature ensures data integrity, critical for storage reliability. The FBGA-96 package allows for high-density memory modules, maximizing storage capacity per server. When designing storage systems, consider the memory requirements for caching algorithms and ensure adequate cooling.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для H5AN8G6NDJR — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | H5AN8G6NDJR-XNC | K4A8G165WB-BCTD | MT40A512M16TB-062E:R |
|---|---|---|---|---|
| Package | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) | 96-ball FBGA (13x7.5mm) |
| Brand | SK hynix | SK hynix | Samsung | Micron |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps | 3200 Mbps | 3200 Mbps | 3200 Mbps |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- High density and bandwidth (против K4A8G165WB-BCTD)
- Advanced features (против MT40A512M16TB-062E:R)
- Low power consumption (против K4A8G165WB-BCTD)
Заметки по проектированию
For DDR4-3200 operation, maintain controlled impedance of 40-50 ohms for DQ/DQS signals and 50-60 ohms for address/control signals. Use ground planes beneath the memory device to minimize noise. Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin. Follow the layout guidelines in the SK hynix datasheet for signal integrity.
The H5AN8G6NDJR operates up to 85°C. In high-density systems, ensure adequate airflow or heatsinking to keep the junction temperature within limits. The FBGA-96 package has a thermal resistance that should be considered; refer to the datasheet for theta_JA values. For high-power applications, consider thermal vias under the package.
Ensure the ZQ pin is connected to a 240-ohm resistor to ground for correct impedance calibration. Do not leave the RESET# pin floating; tie it high during normal operation. Verify that the memory controller supports DDR4-3200 and the x16 organization. Incorrect termination or missing ZQ resistor can cause signal integrity issues.
Информация о соответствии
RoHS compliant per LCSC and JLCPCB listings. Other compliance data not specified in verified sources.
