H5AN4G8NBJR-UHC - 4Gb DDR4 SDRAM 2400, 1.2V | SK Hynix
Артикул: H5AN4G8NBJR-UHC ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $5.9 | $5,90 |
| 10 | $5.31 | $53,10 |
| 100 | $4.75 | $475,00 |
| 500 | $4.02 | $2.010,00 |
| 1.000 | $3.18 | $3.180,00 |
H5AN4G8NBJR-UHC Обзор
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random Access Memory) is the fourth generation of the DDR DRAM family defined by the JEDEC DDR4 standard. It sits within the memory IC hierarchy: DRAM -> synchronous DRAM (SDRAM) -> DDR SDRAM -> DDR4 SDRAM. Compared with DDR3, DDR4 lowers operating voltage from 1.5V/1.35V to 1.2V, doubles bank groups to improve effective bandwidth, and raises data rates up to 3200 Mbps, making it the dominant main-memory technology for embedded and consumer computing platforms.
Key features of the H5AN4G8NBJR-UHC include a 4Gb density organized as 512M x 8, DDR4-2400 speed grade operation, 1.2V core supply, and a compact 78-ball FBGA footprint that is pinout-standardized across the DRAM industry, simplifying second-sourcing. The device supports standard DDR4 features such as bank-group architecture, on-die termination, and DLL-based timing per the JEDEC DDR4 specification.
Architecturally, the die uses SK Hynix CMOS DRAM process technology with an 8n-class bank structure delivering the 4Gb capacity in the x8 organization. The 78-ball TFBGA package minimizes signal-path length for improved signal integrity at 2400 Mbps, and the ball map follows the JEDEC-standard DDR4 x8 component footprint, which enables drop-in assembly on any DDR4 x8 DIMM or onboard-memory land pattern.
Typical applications include consumer desktop and notebook main memory, set-top boxes, smart TVs, networking equipment, industrial control memory, and embedded x86/ARM platforms where 4Gb x8 DDR4 components are populated on-module or on-board. The device is well suited for memory modules and soldered-down memory subsystems alike.
When designing this part into a DDR4 subsystem, ensure controller training covers write-leveling, VrefDQ calibration, and read training, and follow the recommended termination and routing rules (length-matched fly-by command/address routing, on-die termination enabled). Verify the exact -UHC speed-grade binning parameters in the manufacturer datasheet before timing closure.
This page synthesizes distributor pricing from LCSC/JLCPCB, drop-in DDR4 alternatives across SK Hynix, Micron, and Samsung, and practical DDR4 design notes not found in a single datasheet, giving engineers a complete second-source and design-in reference.
Аналоги без доработки для H5AN4G8NBJR-UHC — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с H5AN4G8NBJR-UHC (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Interface, Organization, RoHS Status.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
H5AN4G8NBJR-RDC
✅ Прямая замена✓ В наличии
$2.95 / шт.
Открыть даташит →H5AN4G8NBJR-PBC
✅ Прямая замена✓ В наличии
$2.2 / шт.
Открыть даташит →H5AN4G8NBJR-XNI
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
MT40A512M8RH-083E
✅ Прямая замена✓ В наличии
$3.3 / шт.
Открыть даташит →K4A4G085WD-BCTD
✅ Прямая замена✓ В наличии
$2.05 / шт.
Открыть даташит →MT40A1G8AG-062E
✅ Прямая замена✓ В наличии
$3.1 / шт.
Открыть даташит →K4A8G085WC-BCRC
✅ Прямая замена✓ В наличии
$4.3 / шт.
Открыть даташит →H5AN4G8NBJR-UHC Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Density | 4 Gbit |
| Организация памяти | 512M x 8 |
| Скорость передачи данных | 2400 Mbps (PC2400) |
| Напряжение питания | 1.2 V |
| Интерфейс | DDR4 (JEDEC) |
| Корпус | TFBGA-78 (11 x 7.5 mm) |
| Тип монтажа | Surface Mount |
| Technology | CMOS DRAM |
| Lifecycle Code | Active |
| Статус RoHS | Compliant (Rohs Code: Yes) |
| REACH Compliance | Compliant |
| Manufacturer | SK Hynix Inc. |
Руководство по цоколевке H5AN4G8NBJR-UHC в корпусе tfbga-78 (11 x 7.5 mm)
Цоколевка для H5AN4G8NBJR-UHC (корпус tfbga-78 (11 x 7.5 mm)). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для H5AN4G8NBJR-UHC.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
H5AN4G8NBJR-UHC подходит для 6 применениеs: Consumer Main Memory (Desktop/Notebook), Smart TV and Set-Top Box, Networking and Communications Equipment, Embedded x86 and ARM Computing, Gaming and Consumer Electronics Consoles, Industrial Control and IoT Gateways.
Consumer Main Memory (Desktop/Notebook)
The H5AN4G8NBJR-UHC is designed primarily for main-memory applications requiring large density and high bandwidth, per the H5AN4GxNBJR series datasheet. As a 4Gb 512M x 8 DDR4 running at 2400 Mbps on a 1.2V rail, eight devices in parallel form a 4GB-wide x64 module channel delivering 19.2 GB/s theoretical bandwidth at PC2400. The JEDEC-standard 78-ball FBGA footprint means module PCBs qualified for one vendor's x8 DDR4 accept this part without layout change. Write leveling, VrefDQ training, and fly-by CA routing per DDR4 design rules are required during board bring-up.
Рекомендуется
Smart TV and Set-Top Box
Smart TVs and set-top boxes use 4Gb DDR4 x8 components like the H5AN4G8NBJR-UHC as the main working memory for SoC-based video decoding. Its 2400 Mbps data rate provides sufficient bandwidth for 4K video buffering while the 1.2V supply keeps DRAM power within the tight consumer thermal budget of sealed enclosures. The 78-ball TFBGA (11 x 7.5 mm) fits the compact two- or four-chip onboard memory configurations typical of these platforms. The JEDEC-standard x8 ball map allows easy substitution with SK Hynix sibling bins or Micron/Samsung equivalents during cost-down cycles without PCB respin.
Рекомендуется
Networking and Communications Equipment
Edge routers, switches, and access points populate 4Gb DDR4 x8 devices such as the H5AN4G8NBJR-UHC as packet-buffer and control-plane memory. The DDR4-2400 interface provides the low-latency, high-bandwidth access that network processors require for deep packet buffering, and multiple x8 devices are ganged to form wider buses matching 32-bit or 64-bit NP/memory-controller data paths. Designers should follow fly-by clock/address routing with on-die termination to preserve signal integrity at 2400 Mbps, and should verify that the selected suffix bin meets the industrial or commercial temperature range required by the enclosure environment.
Рекомендуется
Embedded x86 and ARM Computing
Embedded computing platforms - industrial PCs, digital signage players, and ARM server blades - solder down DDR4 x8 components like the H5AN4G8NBJR-UHC directly on the CPU board, avoiding SO-DIMM connectors for reliability and cost. Four devices provide 2 GB of 64-bit DDR4-2400 memory, adequate for lightweight Linux and Windows IoT workloads. Because the 78-ball FBGA ball map is JEDEC-standardized, BOM optimization between SK Hynix, Micron, and Samsung 4Gb x8 parts is possible over the product lifecycle. Memory-controller training parameters (zq calibration, write leveling) should be re-profiled per vendor for margin.
Рекомендуется
Gaming and Consumer Electronics Consoles
Game consoles, streaming media players, and arcade systems rely on DDR4 components in the 4Gb x8 class for main system memory where the H5AN4G8NBJR-UHC's 2400 Mbps rate and 512M x 8 organization match the memory-controller configurations of mainstream SoCs. The consumer suffix bin offers attractive cost versus industrial bins, appropriate for climate-controlled consumer environments. Designers exploiting the JEDEC 78-ball footprint can dual-source with Micron MT40A512M8RH-083E or Samsung K4A4G085WD devices to mitigate commodity DRAM allocation cycles without changing the assembly stencil or reflow profile.
Рекомендуется
Industrial Control and IoT Gateways
Industrial gateways and control systems use the H5AN4G8NBJR-UHC or its industrial-temperature siblings as main memory for edge-analytics and protocol-conversion workloads. Where ambient temperatures exceed the consumer bin's range, the same-family H5AN4G8NBJR-XNI industrial suffix provides extended temperature capability on the identical 78-ball TFBGA footprint, so one PCB supports both commercial and industrial SKUs. The 1.2V DDR4 rail simplifies power-tree design from 5V or 24V industrial supplies through a single buck converter plus VTT termination regulator. Rerun controller training when interchanging vendors or suffix bins.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для H5AN4G8NBJR-UHC — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | H5AN4G8NBJR-RDC | H5AN4G8NBJR-XNI | MT40A512M8RH-083E | K4A4G085WD-BCTD | MT40A1G8AG-062E |
|---|---|---|---|---|---|---|
| Package | TFBGA-78 (11 x 7.5 mm) | TFBGA-78 - same | TFBGA-78 - same | FBGA-78 - same JEDEC footprint | FBGA-78 - same JEDEC footprint | FBGA-78 - same JEDEC footprint |
| Brand | SK Hynix | SK Hynix | SK Hynix | Micron Technology | Samsung Electronics | Micron Technology |
| Density | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit | 8 Gbit (2x) |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 1G x 8 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| RoHS Compliance | Compliant | Compliant | Compliant | Compliant | Compliant | Compliant |
Ключевые отличия
- Cost-optimized consumer bin for high-volume builds (против H5AN4G8NBJR-XNI)
- Cross-brand second-source availability (против MT40A512M8RH-083E)
- Balanced density-bandwidth point (против MT40A1G8AG-062E)
Заметки по проектированию
For DDR4-2400 operation with the H5AN4G8NBJR-UHC, route command/address/control lines in fly-by topology with on-die termination (RTT_NOM/RTT_WR) enabled, and length-match data groups per byte lane to within +/-25 mil skew (estimated; follow your controller's layout guideline, e.g., Intel/AMD DDR4 routing rules). Use ODT settings from the controller training algorithm rather than fixed values. Keep DQ/DM/DQS traces on an unbroken reference plane; the 78-ball TFBGA breakout typically requires 4 or more layers with dedicated VDDQ (1.2V) and VTT planes.
The device operates from a 1.2V VDD/VDDQ supply; VTT termination (roughly 0.6V, half of VDDQ) requires a dedicated sinking/sourcing LDO such as a VTT terminator sized for termination currents during bus turnaround. Estimated: an 8-device x8 DDR4-2400 bus can demand several amps of transient VTT current, so select the VTT regulator for peak, not average, load. Decouple each ball-group with at least one 0.1 uF ceramic capacitor plus bulk 22-47 uF per device, placed close to the VDD balls.
Do not interchange suffix bins (-UHC vs -PBC vs -RDC) without verifying the speed-bin timing table in the H5AN4GxNBJR series datasheet: CAS Latency, tRCD, tRP, and supported data rates differ by suffix. After any vendor or bin substitution (e.g., swapping in Micron MT40A512M8RH-083E), rerun full memory training - write leveling, read training, VrefDQ - because per-vendor DQ timing skews differ. Also confirm the address mapping (512M x 8) matches controller row/column/bank configuration; a denser 8Gb drop-in changes row addresses.
Информация о соответствии
Rohs Code: Yes and REACH compliance reported by Worldway distributor data; JLCPCB lists the part as ROHS. AEC-Q100 qualification not stated - this is a consumer DDR4 series.
