H5AN4G8NBJR-VKIR - 4Gb DDR4 2666Mbps DRAM | SK hynix
Артикул: H5AN4G8NBJR-VKIR ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $2.95 | $2,95 |
| 10 | $2.72 | $27,20 |
| 100 | $2.45 | $245,00 |
| 500 | $2.2 | $1.100,00 |
| 1.000 | $1.98 | $1.980,00 |
H5AN4G8NBJR-VKIR Обзор
A DDR4 SDRAM is a type of synchronous dynamic random-access memory that transfers data on both the rising and falling edges of the clock (Double Data Rate). Within the memory hierarchy, DDR4 sits under the DRAM family, which sits under semiconductor memory, and serves as the high-bandwidth main-memory layer between the processor cache and non-volatile storage such as NAND flash. DDR4 introduced lower operating voltage (1.2V versus 1.5V for DDR3), bank groups, and higher data rates.
Key features of the H5AN4G8NBJR-VKIR include 4Gb (gigabit) density in a single die, a wide x8 bus organization suited to 72-bit and 64-bit wide memory subsystems, 2666 Mbps operation for high-bandwidth main memory, and an industrial operating temperature range in which case temperature must be maintained between -40 and +85 degrees C, with extended operation permitted up to 95 degrees C case per the manufacturer datasheet.
Architecturally, this part is a member of SK hynix's 4Gb DDR4 NBJR family (H5AN4G4/6/8NBJR series), a CMOS DRAM generation ideally suited for main memory applications requiring large density and high bandwidth. Internal bank-group parallelism enables efficient column access scheduling at DDR4-2666 speeds.
Typical applications include server and networking main memory when populated into RDIMM or soldered-down embedded designs, industrial controllers and factory automation requiring -40 to +85 degrees C qualified DRAM, and embedded/telecom platforms needing stable long-life DDR4 sourcing.
Design consideration: DDR4 routing requires length-matched address/command and DQ/DQS fly-by topology, 40-ohm on-die termination settings, and VPP (2.5V) and VDDQ (1.2V) rails with adequate decoupling; verify ZQ calibration resistor placement per the datasheet layout guidelines.
This page synthesizes verified distributor stock data, drop-in same-family alternatives, and practical sourcing guidance not found in the manufacturer datasheet alone.
Аналоги без доработки для H5AN4G8NBJR-VKIR — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с H5AN4G8NBJR-VKIR (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Interface, Refresh, RoHS Status.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
H5AN4G8NBJR-VKI
✅ Прямая замена✓ В наличии
$1.98 / шт.
Открыть даташит →H5AN4G8NBJR-VKC
✅ Прямая замена✓ В наличии
$2.4 / шт.
Открыть даташит →H5AN4G8NBJR-UHI
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$2.25 / шт.
Открыть даташит →H5AN4G8NBJR-UHC
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$3.18 / шт.
Открыть даташит →H5AN4G8NBJR-RDC
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$2.95 / шт.
Открыть даташит →H5AN4G8NBJR-PBC
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$2.2 / шт.
Открыть даташит →H5AN4G8NBJR-VKIR Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Density | 4 Gb |
| Организация памяти | 512M x 8 |
| Скорость передачи данных | 2666 Mbps per pin |
| Supply Voltage (VDD) | 1.2 V |
| Корпус | 78-ball FBGA |
| Тип монтажа | Surface Mount |
| Operating Temperature (Industrial) | -40C to +85C (case) |
| Extended Temperature Range | +85C to +95C (case, per datasheet conditions) |
| Technology | CMOS DRAM |
| Product Family | H5AN4G4/6/8NBJR series |
| Speed Grade Code | -VKI |
| Packing Suffix | R (Tape & Reel) |
Руководство по цоколевке H5AN4G8NBJR-VKIR в корпусе 78-ball fbga
Цоколевка для H5AN4G8NBJR-VKIR (корпус 78-ball fbga). Эта цифровая ИС включает выводы GPIO, интерфейсы связи (UART, SPI, I2C) и выводы питания. Обратитесь к техническому описанию производителя для альтернативных функций выводов и вариантов конфигурации. Необходимо для проектирования встраиваемых систем и трассировки печатных плат.
Нет подробных данных о распиновке для H5AN4G8NBJR-VKIR.
Обратитесь к даташиту для полной конфигурации выводов.
Типичное применение
H5AN4G8NBJR-VKIR подходит для 6 применениеs: Server Main Memory, Industrial Control and Factory Automation, Networking and Telecom Equipment, Embedded and Edge Computing, Test and Measurement Instrumentation, Automotive-Adjacent and Rugged Systems.
Server Main Memory
The H5AN4G8NBJR-VKIR provides 4Gb of DDR4 bandwidth at 2666 Mbps per pin, making it a workhorse component for server main memory when soldered into RDIMM/LRDIMM module PCBs or used in blade and storage controllers. Its x8 organization allows 72-bit ECC subsystems to be built from 8 or 9 devices per rank, and the DDR4-2666 rate supports multi-channel memory controllers without becoming the bandwidth bottleneck. Because DRAM bandwidth is shared, placing 2666 Mbps-class devices behind a fly-by address/command topology with proper termination ensures signal integrity at full speed. Thermal design should keep case temperature below +85 degrees C per the industrial datasheet specification, using airflow per JEDEC module practice.
Рекомендуется
Industrial Control and Factory Automation
Industrial PLCs, motion controllers, and machine-vision systems operate in environments where ambient temperature swings demand memory qualified from -40 to +85 degrees C case temperature, exactly the industrial range of the H5AN4G8NBJR-VKIR. The 2666 Mbps data rate gives headroom for real-time data logging and vision frame buffers, while the 4Gb (512 MB) density supports modern RTOS and Linux-based control stacks. Designers should derate for the extended +85 to +95 degrees C window only under the datasheet's permitted conditions and ensure the 1.2V VDDQ rail is generated by a wide-input industrial DC-DC converter with low ripple. DDR4 write leveling and ZQ calibration run automatically at boot.
Рекомендуется
Networking and Telecom Equipment
Routers, switches, and 5G small-cell platforms need high-bandwidth packet buffering and control-plane memory; the H5AN4G8NBJR-VKIR's 2666 Mbps rate and 4Gb density fit 64-bit and 72-bit ECC memory buses typical of network processors and communication SoCs. Its 1.2V operation reduces memory subsystem power, important for fanless telecom hardware, while the industrial temperature rating suits outdoor cabinets. Layout should follow fly-by routing with per-byte length matching, and the x8 bus allows graceful ECC implementation. Memory-controller training at 2666 Mbps requires quality power delivery; use bulk plus high-frequency ceramic decoupling close to each VDDQ ball group.
Рекомендуется
Embedded and Edge Computing
Edge AI gateways, industrial PCs, and embedded x86/ARM compute modules use soldered-down DDR4 like the H5AN4G8NBJR-VKIR for 512 MB of low-power main memory per device. Compared with DDR3L, the 1.2V DDR4 rail cuts memory power roughly 20 percent, extending thermal budgets in sealed enclosures, while 2666 Mbps operation feeds modern SoC memory controllers. The FBGA-78 footprint supports automated assembly via the tape-and-reel (R suffix) packing. Designers must implement DDR4 write-leveling training in firmware and maintain case temperature within the -40 to +85 degrees C industrial window for guaranteed timing specifications.
Рекомендуется
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators need deep capture buffers; the H5AN4G8NBJR-VKIR supplies 4Gb per device at 2666 Mbps, enabling multi-gigabyte acquisition memory when devices are banked across wide buses. Its x8 organization simplifies byte-lane mapping to ADC acquisition engines, and the industrial rating tolerates bench-to-factory-floor relocation. Acquisition throughput benefits directly from the DDR4-2666 rate: an eight-device 64-bit bus delivers over 20 GB/s of streaming bandwidth. Bench designs should verify timing closure with IBIS models from the manufacturer and keep VREF traces short and matched.
Рекомендуется
Automotive-Adjacent and Rugged Systems
While this specific part is not AEC-Q100 qualified, its industrial -40 to +85 degrees C case range makes it usable in rugged non-safety non-infotainment systems such as telematics gateways, off-highway equipment displays, and rugged data recorders. The 4Gb density supports map caches, video ring buffers, and logging, while the 2666 Mbps rate keeps frame-buffer and logging transactions off the critical path. For such deployments, designers should add conformal-coating-friendly layout spacing around the FBGA, verify vibration-related ball integrity through solder-joint qualification, and derase the extended temperature window strictly per the manufacturer datasheet conditions.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для H5AN4G8NBJR-VKIR — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | H5AN4G8NBJR-VKI | H5AN4G8NBJR-VKC | H5AN4G8NBJR-UHI | H5AN4G8NBJR-PBC |
|---|---|---|---|---|---|
| Package | 78-ball FBGA | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same | 78-ball FBGA - same |
| Brand | SK hynix | SK hynix | SK hynix | SK hynix | SK hynix |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 | 512M x 8 |
| Data Rate | 2666 Mbps | 2666 Mbps | 2666 Mbps | 2400 Mbps class | 1866 Mbps class |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Temperature Grade | Industrial (-40 to +85C case) | Industrial | Commercial (0 to +85C) | Industrial | Commercial |
| Packing | Tape & Reel (R) | Tray | Tray | Tray | Tray |
Ключевые отличия
- Industrial temperature qualification (против H5AN4G8NBJR-VKC)
- Highest speed grade in the NBJR family (против H5AN4G8NBJR-UHI)
- Tape-and-reel packing for automated assembly (против H5AN4G8NBJR-VKI)
Заметки по проектированию
DDR4 at 2666 Mbps requires fly-by routing for address/command with termination to VTT (0.6V) at the end of the chain, and per-byte length matching of DQ to its DQS pair within roughly +/-25 mils class tolerances. Keep the ZQ calibration resistor (240 ohm, 1 percent) on a short isolated trace to ground with no adjacent switching signals. Place 0.1 uF ceramic decoupling at each VDDQ ball group plus bulk capacitance near the regulator. Follow the manufacturer datasheet layout guidelines and the memory controller's design guide.
The industrial rating guarantees specifications only while case temperature stays between -40 and +85 degrees C. Estimated: a DDR4 device dissipating roughly 0.5 W in still air inside a sealed enclosure can rise 15-25 C above ambient, so in a +70 C ambient environment airflow or copper pour under the FBGA is often required. The datasheet permits extended operation from +85 to +95 degrees C case only under its stated extended-temperature conditions (typically with refresh rate doubled) - confirm exact requirements before relying on this window.
Do not substitute commercial-grade (-C suffix) parts for the industrial VKIR in systems that can see sub-zero temperatures: the VKC carries a 0 to +85 degrees C rating and will exceed its specification below freezing. Also note the VKIR is tape-and-reel packed while VKI is tray - MSL handling and reel shelf life must be observed per JEDEC moisture-sensitivity practice. When swapping speed grades (VKI to UH or RD), update controller timing tables and re-run DRAM training; a 2666 Mbps-trained bootloader may fail to initialize a 2400 Mbps device.
Информация о соответствии
Compliance data was not present in the provided web sources; request RoHS/REACH certificates from SK hynix or the distributor with your RFQ.