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MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP
The NXP MW4IC001NR4 is a wideband integrated power amplifier IC designed for distortion-signature generation in analog predistortion (APD) feedback paths of cellular base-station transmitter lineups. It operates across 800 MHz to 2170 MHz, delivers 900 mW (29.5 dBm) of P1dB-style output power, runs from a 26 V supply, and is housed in a PLD-1.5 over-molded plastic package. The part's primary role is providing a controlled, repeatable nonlinear signature that the APD controller learns and cancels from the main PA's output, enabling multi-carrier W-CDMA, GSM/EDGE, TDMA, and CDMA systems to meet spectral regrowth and ACLR masks at the antenna connector. An RF power amplifier (RF PA) is a nonlinear active device that boosts low-level RF input signals up to transmission levels while adding gain, distortion, and noise. In cellular infrastructure, the main PA drives the antenna; an APD feedback amplifier such as the MW4IC001NR4 is tapped from the coupler path so that the digital predistortion engine can model and pre-invert the main amplifier's AM-AM and AM-PM curves. Wideband LDMOS technology (Laterally Diffused Metal-Oxide Semiconductor) is the standard silicon process for sub-3 GHz high-power base-station PAs because it combines high breakdown voltage, good thermal conductivity, and acceptable RF efficiency at frequencies up to roughly 2.7 GHz. Key specifications include 13 dB small-signal gain, 12 mA quiescent supply current at 26 V, and frequency coverage suitable for GSM 900, DCS 1800, UMTS 2100, and 850/900/1900/2100 MHz W-CDMA bands. Internally matched 50 ohm input and output networks simplify board layout and remove the need for external matching components. The LDMOS die is biased class-AB for linear operation, and the part is rated for continuous duty over the -40 C to +85 C ambient range. The wideband response removes the need for band-specific feedback amplifiers in multiband radio designs. The architecture integrates two amplification stages with on-chip inter-stage matching, a quiescent-current bias setting resistor pin, and a regulated drain bias network. Compared with a discrete two-stage LDMOS PA, the MW4IC001NR4 reduces PCB area by eliminating external matching passives and improves repeatability unit-to-unit. The device is designed to sit in a low-power sampled path, not the main transmit chain, so absolute efficiency is less critical than predictable distortion characteristics. Typical applications include W-CDMA analog predistortion feedback paths, GSM/EDGE linearizer reference amplifiers, multi-standard (GSM/UMTS) base-station transmitter subsystems, and instrumentation amplifiers used in PA characterization test beds. It is equally usable as a small-signal driver when its 13 dB gain and broadband flatness are needed ahead of a downstream power block. Designers should observe NXP's recommended evaluation board layout for the PLD-1.5 package, including flange-mount screw-down for thermal dissipation, and should ensure the device is biased within the 26 V data-sheet envelope. Lead-free reflow profiles (260 C peak) are supported on the N-suffix part, but flange-mounting to a heatsink is mandatory at continuous 900 mW output. This page consolidates verified distributor pricing, drop-in alternatives, and engineering design notes not found in the manufacturer datasheet alone.
MW4IC2230MBR5 - 30W RF LDMOS Power Amp 1.6-2.4GHz | NXP
The NXP MW4IC2230MBR5 is a 30 W RF LDMOS wideband integrated power amplifier designed for the 1.6 GHz to 2.4 GHz frequency range, supplied in a TO-272 WB-16 over-molded plastic package with flat leads. It targets cellular base station and wireless infrastructure transmitter chains, including CDMA, GSM, EDGE, TDMA and W-CDMA air interfaces, where a single device can replace multi-stage discrete line-ups. An RF power amplifier is the final active stage in a transmitter chain that boosts a low-level modulated IF/baseband signal up to the watt-level RF output required to drive the antenna. Wideband integrated designs such as MW4IC2230MBR5 collapse multiple gain stages, matching networks and bias circuitry into one die, reducing board area, BOM count and tune time versus a discrete implementation. As an LDMOS device it belongs to the laterally-diffused MOSFET family - a power transistor technology standard in base-station transmitters because of its high power density, high gain, and good efficiency at RF frequencies. The MW4IC2230MBR5 sits inside the broader hierarchy: RF power transistor -> LDMOS RF power amplifier -> base-station PA -> RF & wireless subsystem. Key features include 31 dB typical power gain across the 1.6-2.4 GHz band, 26 V nominal drain supply, 60 mA quiescent supply current, integrated ESD protection, and a wideband input matching network that allows one part to cover multiple cellular bands. The TO-272 WB-16 over-molded plastic package provides low thermal resistance and is compatible with standard base-station heatsink assemblies. The amplifier uses two integrated LDMOS gain stages with on-chip matching, internal bias sequencing and a robust thermally-stable plastic over-mold. The internal design trades absolute peak efficiency for broad bandwidth and ease of use, simplifying multi-band radio design. Typical applications include W-CDMA/EDGE driver stages, GSM 1800/1900 MHz base-station PAs, 2.4 GHz ISM-band power amplifiers, RFID readers and other wireless infrastructure equipment operating in the 1.6-2.4 GHz window. Designers should provide an adequate PCB copper thermal pad and a properly rated heatsink - the 30 W CW power level demands careful thermal management. Bias sequencing and supply decoupling per the NXP reference design are required to meet the linearity and gain specifications. This page consolidates distributor stock, drop-in alternatives and practical design guidance not bundled in the NXP datasheet, helping RF engineers select and source the MW4IC2230MBR5 with confidence.
MW4IC2230NBR1 - 30W W-CDMA RF Power Amplifier, 1.6-2.4 GHz | NXP
The NXP MW4IC2230NBR1 is a 30 W, 28 V single W-CDMA RF LDMOS wideband integrated power amplifier covering 2110-2170 MHz (usable from 1600-2400 MHz), housed in a TO-272 WB-16 over-molded plastic package. Per the manufacturer datasheet, it integrates a multi-stage amplifier chain with on-chip input matching, delivers approximately 31 dB small-signal gain, and is designed primarily for cellular base station driver and final-stage applications. What is an integrated RF power amplifier? An integrated RF power amplifier (PA) is a multi-stage amplifier in which the input/output matching networks, bias circuits, and sometimes output harmonics filters are combined onto a single semiconductor die and packaged in a flange or over-molded carrier. RF PAs sit at the transmitter chain end, downstream of the modulator/upconverter and upstream of the antenna duplexer; they convert low-power modulated RF signals into high-power RF suitable for radiation. ICs like the MW4IC2230N family use LDMOS (Laterally-Diffused Metal-Oxide Semiconductor) at high breakdown voltage (26-28 V) to deliver tens of watts of RF power while maintaining acceptable linearity for spectrally-efficient cellular standards. Key features include a 31 dB typical gain at 2.14 GHz, P1dB compression near 30 W saturated output, high linearity suitable for 3GPP W-CDMA, EDGE, GSM, TDMA and CDMA modulations, integrated ESD protection, and internally matched 50 ohm input. The TO-272 WB-16 over-molded plastic package provides a low thermal-resistance flange for direct PCB or heatsink mounting, and the wideband on-chip design eliminates the need for band-specific matching boards. The MW4IC2230NBR1 uses Freescale/NXP high-voltage (HV) LDMOS IC technology on a multi-stage topology. Two driver stages feed a final LDMOS FET output; integrated matching networks provide 50 ohm at the input while the output is matched for the 1.6-2.4 GHz cellular bands. The part is specified for 26-28 V drain supply operation, with bias generated by on-chip active bias that maintains quiescent current over temperature. The wideband response makes one part cover several cellular bands, reducing SKU count in multi-band BTS designs. Typical applications include W-CDMA/3G cellular base-station driver and final PAs, EDGE multi-slot PA modules, TDMA and CDMA base-station transmitters, and driver amplifiers for higher-power outdoor units. The integrated matching and wideband response simplify OEM BTS radio designs and reduce tuneable-component count. When designing in this part, observe the 28 V maximum drain supply and use a sequenced bias controller (such as NXP's MML Series or compatible) to prevent thermal runaway. Decouple the drain and gate supplies aggressively at the lead with ceramic and bulk capacitors to suppress envelope-frequency ripple that would otherwise degrade ACLR. The TO-272 flange must be soldered to a continuous copper pour or bolted to a heatsink to maintain junction temperature below 200 C at full output. This page synthesizes distributor availability, NXP/Freescale datasheet parameters, and pin/package data not consolidated on Mouser or DigiKey product pages.
MW4IC915MBR1 - 900MHz 15W RF LDMOS Power Amplifier | NXP
The NXP MW4IC915MBR1 is a 15 W, 26 V RF LDMOS wideband integrated power amplifier designed for 860-960 MHz GSM, GSM EDGE, N-CDMA and W-CDMA base station applications, housed in a TO-272 WB-16 overmolded plastic package. It delivers up to 15 W CW output power across 750 MHz to 1 GHz with high gain and integrated two-stage matching, reducing external component count on the base-station PCB. An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) integrated power amplifier is a type of RF power transistor built on a silicon LDMOS process, internally matched to 50 ohms at input and output and integrated with bias networks to simplify RF front-end design. In the broader RF component taxonomy, the MW4IC915MBR1 sits within: RF power amplifier -> RF amplifier IC -> amplifier -> RF & wireless IC -> semiconductor device. Key features include 15 W CW Pout at 26 V, broadband coverage from 750 MHz to 1 GHz covering all 900 MHz cellular bands, on-chip input and interstage matching networks, high gain suitable for driver or final-stage use, and built-in ESD protection. The TO-272 WB-16 overmolded plastic package provides a low thermal-resistance path, enabling compact base-station amplifier board designs. Internally the device uses a two-stage LDMOS architecture with on-chip matching; the gates are biased through internal networks, which simplifies the external application circuit to DC blocking caps at RF ports, drain-supply RF chokes, and a regulated gate bias supply. Compared with discrete transistor implementations, the integrated matching reduces tuning effort and improves unit-to-unit gain flatness across production lots. Typical applications include GSM/GSM EDGE base-station power amplifiers, N-CDMA and W-CDMA 900 MHz cellular infrastructure, and general 860-960 MHz industrial RF transmitters. The broadband response also makes it usable as a driver for higher-power LDMOS final stages in macro-cell base stations. When designing with this part, ensure the heatsink thermal design keeps the case temperature below the manufacturer's maximum rating under worst-case CW load. Adequate RF decoupling and harmonic filtering at the output are essential to meet spectral mask requirements in cellular systems. This page synthesizes distributor pricing, parametric drop-in alternatives, and application notes not found in the manufacturer datasheet alone, with current market data as of 2026-10-16 to support engineering sourcing decisions.
MW4IC915NBR1 - 15W RF LDMOS PA 860-960MHz | NXP TO-272WB-16
The NXP Semiconductors MW4IC915NBR1 is a 15 W RF LDMOS wideband integrated power amplifier designed for GSM and GSM EDGE cellular base station applications in the 860-960 MHz band. Housed in a TO-272 WB-16 over-molded plastic package, it operates from a high-voltage 26 V supply and uses Freescale/NXP's High Voltage LDMOS IC technology with a multi-stage, on-chip matched structure usable from 750 MHz to 1000 MHz. The amplifier delivers roughly 4 W average output for GSM and supports the linearity required for EDGE, TDMA, N-CDMA, and W-CDMA modulations per the manufacturer's data sheet. An RF power amplifier is the final active stage in a base-station transmitter that boosts a low-level modulated RF signal up to the multi-watt levels required to drive the antenna feed network. Within the transmitter chain, this block sits after the up-converter and channel-filter stages, and it must provide adequate gain, efficiency, and linearity so the modulated signal is reproduced at the antenna without distortion or spectral regrowth. LDMOS (Laterally Diffused Metal Oxide Semiconductor) has become the dominant technology for cellular base-station PAs in the sub-3 GHz bands because it combines high power density, high breakdown voltage, and good thermal performance with relatively low cost compared to GaAs. Key specifications include a frequency range of 860-960 MHz (broadband usable from 750-1000 MHz), a 26 V typical supply (with operation up to 28 V), 15 W pulsed output power capability, multi-stage on-chip input matching, and integrated ESD protection. The two variants in the family - MW4IC915NBR1 with the internal input match optimised for the 860-960 MHz band and MW4IC915GNBR1 covering 728-803 MHz - share the same package and pinout, allowing PCB reuse across regional cellular bands. According to the manufacturer data sheet, the device is designed for use as the final stage in a base-station power amplifier module. The MW4IC915NBR1 uses a multi-stage LDMOS transistor architecture in which the input, inter-stage, and output matching networks are absorbed onto the silicon die. This integration simplifies board-level design by eliminating dozens of external discrete components that a discrete-transistor PA would otherwise require, while the high-voltage (26-28 V) operation reduces DC current and improves power-added efficiency relative to lower-voltage parts at the same RF power level. The device is rated to operate case temperatures within published limits and is qualified for the demanding reliability expectations of outdoor cellular infrastructure. Typical applications include GSM 900 MHz and GSM EDGE base-station transmit chains, cellular repeaters and boosters, TDMA/N-CDMA/W-CDMA driver or final amplifiers in the 900 MHz band, and industrial/scientific/medical (ISM) transmitters near 915 MHz. Designers typically pair it with circulators, isolators, and bandpass filters downstream to meet regulatory emission masks. When designing with this amplifier, thermal management is critical - the on-chip LDMOS transistors dissipate substantial heat at multi-watt CW or average output, so adequate PCB copper area or an external heatsink must be provided. Designers should also follow the manufacturer's reference PCB layout and bias sequencing to avoid device stress during turn-on and turn-off transients. This page synthesises real distributor pricing, drop-in alternatives from the same NXP MW4IC915 family, and practical design notes for cellular base-station PA applications not all collected in one place in the manufacturer's data sheet.
MW5IC2030MBR1 - 30W RF LDMOS Power Amplifier 1.93-1.99GHz | NXP
The NXP MW5IC2030MBR1 is a 30 W RF LDMOS wideband integrated power amplifier designed for cellular base station applications in the 1930-1990 MHz band, housed in a TO-272 WB-16 overmolded plastic package. It delivers 30 W CW output power at 26 V supply, supports GSM/GSM EDGE, W-CDMA, and PHS modulation formats, and provides a typical gain of 23 dB across the operating band. The part is internally matched to 50 ohms at input and output, eliminating the need for external matching networks and simplifying PCB layout. A RF LDMOS integrated power amplifier (IPA) is a multi-stage transistor amplifier built on a laterally-diffused metal-oxide-semiconductor process and integrated with on-chip input/output matching networks. IPAs sit at the output stage of a base-station transmitter, immediately before the antenna filter and duplexer, converting milliwatt-level driver signals into tens of watts of RF power while maintaining linearity and efficiency. They belong to the broader family of RF power transistors (LDMOS -> RF power transistor -> discrete semiconductor -> RF amplifier IC) and are preferred for cellular infrastructure because LDMOS offers a superior gain-linearity-cost trade-off compared to GaAs and GaN alternatives at sub-3 GHz frequencies. Key features include 23 dB typical gain, 26 V nominal supply operation (range 26-28 V), 160 mA typical quiescent supply current, and integrated ESD protection on the gate. The multi-stage structure includes on-chip matching that makes it drop-in usable from 1930 to 1990 MHz, reducing board footprint and RF tuning time. The TO-272 WB-16 overmolded plastic package provides low thermal resistance for reliable CW and pulsed operation. The MW5IC2030MBR1 uses a multi-stage LDMOS architecture with on-chip matching. The first stage is a Class AB driver providing roughly 15 dB of gain, followed by a final-stage Class AB output that supplies the additional 8 dB to reach the typ 23 dB total. The LDMOS process gives high drain efficiency and good ruggedness into mismatched loads (VSWR), and the 26 V rail improves power density versus legacy 12-15 V parts. Typical applications include GSM/EDGE 1900 MHz base-station PA stages, W-CDMA Node B transmit amplifiers, PHS (Personal Handy-phone System) micro-cell transmitters, and general 1930-1990 MHz industrial ISM-band RF power generation. When designing with this part, ensure the PCB thermal layout connects the package flange to a sufficient copper area for heat removal; CW 30 W operation can push the junction temperature well above safe limits without proper thermal via stitching.
MW6IC2240NBR1 - 2.11-2.17 GHz 4.5W RF LDMOS Amplifier | NXP
The NXP MW6IC2240NBR1 is a dual-path RF LDMOS wideband integrated power amplifier delivering 4.5 W average output power across 2110-2170 MHz with 28 dB power gain from a 28 V rail, housed in a TO-272 WB-16 over-molded plastic package. Designed for cellular base-station driver stages, it covers W-CDMA, TD-SCDMA and other 2.1 GHz band modulation formats with on-chip input matching that eliminates external baluns and simplifies PCB layout. An RF power amplifier (PA) is the final active stage that boosts a low-level RF signal from a transceiver or up-converter to the transmit power required to reach the base station antenna. Within the transmitter chain, the PA sits after the up-converter and before the duplexer/filter; LDMOS (Laterally Diffused Metal-Oxide Semiconductor) technology has dominated cellular base-station PAs since the late 1990s because of its high RF power density, high efficiency at 28-32 V, and proven reliability in continuous-wave and modulated service. The MW6IC2240N sits in the driver tier - it pre-amplifies the signal ahead of a higher-power final stage, or, with its 4.5 W average rating, can serve directly as a small-cell or picocell final stage. Key specifications include 29 dB power gain in the typical 2-carrier W-CDMA operating point (VDD = 28 V, Pout = 25 dBm average, full 2110-2170 MHz band, channel bandwidth 3.84 MHz, PAR 8.5 dB @ 0.01% CCDF). Linearity is characterized by IM3 of -59 dBc at 10 MHz offset and ACPR of -62 dBc at 5 MHz offset - the metrics that determine whether a PA meets 3GPP spectral-emission masks. Quiescent bias is set externally at IDQ1 = 300 mA and IDQ2 = 320 mA for the two integrated stages, and the device tolerates a 3:1 VSWR load mismatch at 28 Vdc / 2170 MHz / 20 W CW without damage, simplifying the system protection design. The IC integrates two cascaded gain stages on a single die with 50 Ω single-ended RF ports on each path, internal matching networks, and ESD protection on the gate terminals. Operation from 26 V to 32 V lets designers trade off efficiency versus headroom; lower VDD improves efficiency at the cost of gain and linearity, higher VDD does the reverse. Thermal resistance from junction to case supports the 4.5 W average rating when mounted to a properly heatsunk PCB copper pad. Typical applications include W-CDMA/TD-SCDMA driver stages in macro and micro base stations, picocell and femtocell final stages, and driver amplification for higher-power booster amplifiers in the 2.1 GHz band. The integrated matching makes it usable in any 2110-2170 MHz system without per-board RF tuning, which reduces both design time and production variation. When designing with this part, prioritize thermal performance: at 4.5 W average output and class-AB bias the device dissipates on the order of 10-15 W, so the TO-272 WB-16 package must be soldered to a copper ground pad of at least several square centimeters with thermal vias to the inner plane. DC blocking capacitors on RF input and output must be rated for the full supply rail and the W-CDMA peak voltage; an external bias sequencing circuit is recommended to prevent thermal overstress during turn-on. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet. All specifications are quoted from the NXP MW6IC2240N datasheet; verification timestamps are shown in the data_sources block.
MW6IC2420NBR1 - 2.45GHz 20W RF LDMOS Power Amplifier | NXP
The NXP MW6IC2420NBR1 is a 20 W CW RF LDMOS integrated power amplifier designed with on-chip matching for the 2450 MHz industrial-scientific-medical (ISM) band, housed in a 17-pin TO-272 WB-16 package with flat leads and supplied on tape-and-reel. It delivers 19.5 dB small-signal gain, 20 W P1dB-class output power at 28 V supply, and covers 2110–2170 MHz while remaining usable up to 2450 MHz, making it a drop-in RF power stage for microwave links, Wi-Fi amplification front-ends and industrial heating applications. A power amplifier (PA) is the final active stage of a transmitter signal chain that converts a low-level RF input into a high-power signal delivered to the antenna. The MW6IC2420NBR1 belongs to the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family of RF power transistors, integrated as a multi-stage MMIC inside a single plastic over-molded package. Its on-chip input and output matching networks eliminate external microstrip matching components, reducing PCB complexity and shrinking board area in 2.4 GHz transmitters. Key features include 19.5 dB typical gain at 2.17 GHz, 20 W CW output capability at 28 V, integrated bias networks, ESD protection on all ports, and broadband matched operation across 2110–2450 MHz. The 50 Ω nominal input/output impedance simplifies PCB layout, and the TO-272 WB-16 ceramic-plastic package offers a thermal resistance suitable for continuous-wave duty with proper heatsinking. Architecturally, the device is a two-stage cascade of LDMOS FET cells biased in Class AB for linear amplification, with internal inter-stage matching and a harmonic termination network optimized for CW operation. Compared to a discrete FET-plus-matching design, the integrated approach reduces part count and improves unit-to-unit gain consistency. Typical applications include 2.4–2.5 GHz ISM transmitters, microwave oven driver stages, Wi-Fi 802.11b/g power amplifiers, RF heating systems, and digital video broadcast uplink equipment. When designing with the MW6IC2420NBR1, ensure the heatsink keeps the flange temperature below the datasheet maximum and provide a 28 V regulated supply with adequate decoupling to suppress low-frequency oscillation.
MW7IC18100GNR1 - 100W 1990MHz RF LDMOS Power Amplifier | NXP
The NXP MW7IC18100GNR1 is a 100 W RF LDMOS wideband integrated power amplifier designed for cellular base-station transmitters operating from 1805 to 2050 MHz, packaged in the TO-270 WB-14 GULL (flanged ceramic/air-cavity) outline. The multi-stage IC delivers 27 dB typical power gain, 48% power-added efficiency at 100 W CW, and on-chip input matching that allows direct drop-in use across the entire 1.805–2.05 GHz cellular band. It is rated for 24 V to 32 V (28 V typical) operation and supports GSM, GSM EDGE, and CDMA modulations. An RF power amplifier is the final active stage of a base-station transmitter that boosts a low-level modulated RF signal up to the multi-watt or hundred-watt power level required to drive the antenna over the airlink. It is part of the RF front-end hierarchy (modulator → driver amplifier → power amplifier → filter/duplexer → antenna) and is typically implemented in LDMOS, GaN HEMT, or GaAs pHEMT technology. LDMOS parts such as the MW7IC18100GNR1 are favored in sub-3 GHz cellular infrastructure because they combine high power density, low cost-per-watt, and excellent linearity with mature, high-volume silicon manufacturing. Key features include on-chip matching for 50 Ω systems, integrated ESD protection, integrated temperature-compensated bias networks, and a thermally efficient flanged ceramic package suited to bolted-down heatsink mounting. The TO-270 WB-14 GULL outline exposes the flange as the RF ground and thermal path, enabling direct attachment to the system heat-sink without additional insulators. The IC supports multiband base-station architectures when paired with a companion driver and DPD pre-distortion. Technically, the MW7IC18100GNR1 is a two-stage LDMOS amplifier. The first stage operates in class AB and provides the bulk of the gain; the second stage delivers the output power and is optimized for high efficiency. Built-in matching reduces the bill of materials and simplifies board layout, allowing engineers to realize a complete 100 W PA stage with only a handful of external bias, decoupling, and harmonic-filter components. Typical applications include GSM/EDGE base-station power amplifiers, CDMA2000 1X/EV-DO PA modules, multicarrier cellular infrastructure, and WLL (Wireless Local Loop) transmitters. The wideband on-chip matching also makes it usable for adjacent bands such as DCS-1800 and PCS-1900 with minimal re-tuning. When designing with this device, ensure the heatsink is properly bolted down and the flange surface is clean to maintain low thermal resistance. The quiescent currents IDQ1 = 180 mA and IDQ2 = 1000 mA must be set carefully to balance linearity against efficiency, and digital pre-distortion is strongly recommended for non-constant-envelope waveforms. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
MW7IC18100NR1 - 100W RF LDMOS 1.8-2.05GHz PA TO-270 | NXP
The NXP Semiconductors MW7IC18100NR1 is a 100 W RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) wideband integrated power amplifier designed for 1805-2050 MHz operation in a TO-270 WB-14 plastic package. According to the manufacturer datasheet, this multi-stage IC delivers 30 dB typical power gain, 100 W CW output, and operates from a 24 V to 32 V supply rail, with on-chip matching that eliminates external input/output networks for ease of design-in across cellular base station modulations including GSM, GSM EDGE, and CDMA. An RF LDMOS Integrated Power Amplifier (IPA) is a single-package semiconductor module that combines a driver stage and a final power stage on a monolithic die, eliminating the discrete matching network and interstage combining required by hybrid PAs. IPAs sit at the top of the cellular base-station transmitter hierarchy (transceiver -> exciter -> upconverter -> driver amp -> IPA -> duplexer -> antenna) and are the dominant discrete-output stage technology for sub-6 GHz macro-cell and small-cell base stations because of their high power density, broad instantaneous bandwidth, and excellent ruggedness into mismatched loads. Key features include stable operation into a 5:1 VSWR, all spurs below -60 dBc at 100 mW to 5 W CW, 25 W CW typical P1dB, 100% PAR-tested guaranteed output power capability, on-chip matching for 50 ohm interfaces, characterizations for series-equivalent large-signal impedance parameters, and ESD protection. The TO-270 WB-14 plastic overmold package with flat leads is compatible with high-throughput surface-mount reflow or epoxy-attach PCB assembly and provides a small PCB footprint compared to ceramic flange parts. The MW7IC18100N family uses NXP's sixth-generation LDMOS process with on-chip input and interstage matching networks, allowing it to be used as a drop-in final stage across multiple cellular bands without external tuning. A reference design with the companion analog pre-distortion controller MMG1520 and the NXP Airfast gate-driver ICs simplifies multi-carrier GSM/EDGE and W-CDMA amplifier line-ups. Typical applications include GSM/EDGE cellular base station final stages, W-CDMA/UMTS driver or final stages, LTE small-cell power amplifiers, and industrial 2 GHz RF heaters or plasma drivers. The wideband nature also makes it useful in commercial pulsed-RF and test-instrumentation amplifiers. When designing with this part, ensure the PCB uses RF-grade laminate (Rogers RO4350 or equivalent) and follow NXP's AN1908 application note for thermal layout. The exposed pad must be soldered to a large copper pour, and a 28 V / 1.18 A typical quiescent operating point (IDQ1 = 90 mA, IDQ2 = 430 mA for EDGE) should be programmed via the gate bias pins. This page synthesizes distributor pricing, drop-in NXP alternatives, and practical design notes not found in the standalone datasheet.
MW7IC2040GNR1 - 4W RF LDMOS PA, 1.8-1.99 GHz | NXP
The NXP MW7IC2040GNR1 is a 4 W RF LDMOS wideband integrated power amplifier covering 1805 MHz to 1990 MHz with on-chip matching, supplied in a TO-270-16 gull-wing package. Designed for cellular base station applications, it supports W-CDMA, GSM/EDGE, and other 2G/3G cellular modulation formats from a 24 V to 32 V supply rail. The device is part of the MW7IC2040 family (also sold as MW7IC2040NR1 and MW7IC2040NBR1), differing primarily in tape-and-reel orientation and supply-voltage characterization. An RF power amplifier (RF PA) is the final active stage in a wireless transmitter that boosts a low-level modulated RF signal to a transmission power level suitable for radiation by an antenna. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant transistor technology for sub-3 GHz high-power applications because it offers a compelling trade-off of gain, efficiency, ruggedness, and thermal performance versus GaAs or SiGe alternatives. Within the cellular base-station signal chain, the RF PA sits between the driver amplifier / predistortion block and the duplexer/filter network. Key specifications include 4 W CW output power (P1dB class), 23.5 dB small-signal gain at 1.99 GHz, 50 ohm nominal input/output impedance, and on-chip matching that eliminates the need for external baluns or complex matching networks. The MW7IC2040GNR1 also features integrated bias sequencing support and ESD protection. Typical gain flatness across the 1805-1990 MHz cellular bands is well-suited for multi-band W-CDMA and GSM/EDGE base-station lineups. The MW7IC2040 family uses a two-stage LDMOS architecture on a single die, with on-chip input matching networks optimized for the 1.8-2.0 GHz bands. Internal stabilization networks and bias circuits simplify PCB design, while the plastic overmold TO-270 package provides low thermal resistance suitable for base-station air-cooled environments with adequate heatsinking. Typical applications include W-CDMA and GSM/EDGE cellular base-station driver and final-stage PAs, multi-carrier power amplifier lineups, and broadband RF transmitters in the 1805-1990 MHz cellular bands. The wideband on-chip matching allows a single part to cover both the 1805-1880 MHz DCS/EDGE band and the 1930-1990 MHz W-CDMA band with no external tuning. When designing with this device, provide adequate copper area or an external heatsink because the device dissipates 15-20 W of heat at 4 W RF output. Decouple the supply with low-ESR ceramic and bulk capacitors near the drain leads, and keep RF traces short and isolated from the supply rails. This page synthesizes distributor pricing, drop-in family variants (MW7IC2040NR1, MW7IC2040NBR1), and practical base-station PA design notes not aggregated in the manufacturer datasheet alone.
MW7IC2040NBR1 - 4W RF LDMOS Wideband Power Amplifier | NXP Semiconductors
The NXP MW7IC2040NBR1 is a 4 W RF LDMOS wideband integrated power amplifier covering 1930-1990 MHz and 1805-1880 MHz in a TO-272-16 Variant (Flat Leads) package. It operates from a 24 V to 32 V supply rail, delivers 23.5 dB power gain at 1990 MHz, and is built on NXP's later-generation laterally diffused metal-oxide semiconductor (LDMOS) process with on-chip matching, eliminating the need for external RF matching components in the main signal path. An RF power amplifier (PA) is the final active stage in a wireless transmitter chain that boosts the modulated RF signal from milliwatt-level driver stages up to watts of output power for the antenna. Integrated PAs such as the MW7IC2040NBR1 combine the input/output matching networks and bias circuitry on the same silicon die, allowing cellular base-station and repeater designers to shorten the bill of materials and reduce PCB tuning time compared with discrete LDMOS designs. Key features include 23.5 dB typical small-signal gain, a 32 V maximum supply voltage rating, 75 mA quiescent supply current, on-chip input and inter-stage matching, and built-in ESD protection. The TO-272-16 over-molded plastic package provides a low thermal-resistance path to the system heatsink, suitable for continuous-wave (CW) and W-CDMA/GSM/EDGE cellular modulation formats. Architecturally, the MW7IC2040NBR1 is a multi-stage cascaded amplifier: a low-power driver stage feeds an intermediate stage that drives the final LDMOS output device. Each stage uses on-chip transmission-line matching, which keeps the part drop-in usable across the 1805-1990 MHz band without any customer-applied external matching. The wide-bandgap LDMOS technology gives high drain efficiency and ruggedness into a high VSWR load. Typical applications include W-CDMA, GSM and EDGE cellular base-station driver and final PAs, 1800 MHz DCS and 1900 MHz PCS band amplifiers, and wireless-infrastructure repeaters. It is also useful as a generic 1.8 to 2.0 GHz RF block for industrial and aerospace transmitter designs. When designing in this part, heatsink the exposed pad to a copper area on the PCB rated for the worst-case continuous dissipation. Avoid running the device below 24 V on the drain, since linearity and efficiency degrade; for lower-voltage applications, evaluate the MW7IC2040NR1/2040GNR1 family variants. This page synthesizes distributor pricing, drop-in alternatives and practical design notes not found in the manufacturer datasheet alone.
MW7IC2040NR1 - 4W RF LDMOS Wideband PA | NXP | Cellular BTS
The NXP MW7IC2040NR1 is a 4 W RF LDMOS wideband integrated power amplifier IC designed with on-chip matching that makes it usable from 1805 MHz to 1990 MHz, packaged in a TO-270 WBL-16 (TO-270-16 Variant, Flat Leads) plastic over-mold surface-mount module. The multi-stage structure is rated for 24 V to 32 V operation and covers typical cellular base-station modulation formats including W-CDMA, GSM/EDGE, and LTE in the 1805-1880 MHz (DCS/PCS uplink) and 1930-1990 MHz (UMTS downlink) bands. What is an RF LDMOS integrated power amplifier? An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) integrated power amplifier is a high-linearity RF transistor-amplifier IC optimized for high-power transmission in wireless infrastructure. LDMOS is the dominant technology for cellular base-station power amplifiers because it combines high gain, excellent linearity (critical for W-CDMA/LTE modulation), and ruggedness under mismatch at full rated output power. The 'integrated' aspect means two or more amplifier stages plus on-chip matching networks are co-packaged inside one module, reducing board space and simplifying design versus a discrete transistor-plus-balun approach. Key features include 23.5 dB of small-signal gain, 32 V maximum supply, 75 mA quiescent-supply current, and 100 MHz to 1 GHz broadband capability (the device is characterized at the cellular bands but is usable across this broader range). The WBL-16 over-mold plastic package provides a low-inductance ground path to the application PCB, allowing consistent RF performance, repeatability in production, and the typical RF power amplifier mount with flanged leads. The MW7IC2040NR1 architecture is a two-stage class-AB LDMOS pair optimized for Doherty and driver-stage use in base-station PAs. Typical typical performance targets 4 W average W-CDMA output power with adjacent-channel leakage ratio meeting 3GPP release-99/4/5/6/7/8/9 masks. The IC is intended to be preceded by a smaller driver or to be used as a final-stage driver in macro/micro base stations. The breakdown voltage supports nominal 28 V operation with margin to 32 V for peak envelope conditions common in LTE uplink bursts. Typical applications include W-CDMA cellular base stations, GSM/EDGE base transceiver stations, LTE small-cell and micro-cell power amplifiers, and high-linearity driver stages for higher-power LDMOS finals. The on-chip matching allows the device to drop into a 50 ohm reference design with minimal external components. When designing with this device, ensure adequate DC-feed decoupling directly at the drain leads using a low-ESR ceramic capacitor in parallel with a tantalum or electrolytic bulk capacitor; the gate bias lines must be RF-decoupled to prevent low-frequency oscillation. The plastic over-mold requires that the PCB land pattern provide a full bottom-side ground drain connection through plated vias; failure to do so will degrade output power and efficiency. This page synthesizes distributor pricing, drop-in same-package family variants (GNR1, NBR1, 930NR1, 2240GNR1, 2750NR1), and practical design notes not found in the manufacturer datasheet.
MW7IC2220GNR1 - 2W W-CDMA RF LDMOS PA 2.11-2.17 GHz | NXP
The NXP MW7IC2220GNR1 is a single W-CDMA RF LDMOS wideband integrated power amplifier covering 2110 to 2170 MHz, rated for 2 W average output power from a 28 V supply, and packaged in a TO-270 WBL-16 Gull-Wing (16-pin) outline. The part belongs to the legacy Freescale Airfast RF power family now carried by NXP, and it is specified to deliver 31 dB typical gain in the 2 GHz cellular band with on-chip input and output matching. An RF power amplifier is a semiconductor device that boosts a low-level modulated RF signal to a high transmission power level while preserving spectral mask compliance and adjacent-channel leakage ratio. Within the cellular base-station signal chain the PA sits immediately before the duplexer and antenna, and it must simultaneously deliver high efficiency, adequate linearity for W-CDMA/LTE modulation, and robustness under VSWR mismatch. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) has historically dominated macro-cell transmitter outputs because it combines high RF power density, low cost per watt, and easier broadband matching than GaAs alternatives. Key features of the MW7IC2220GNR1 include 2 W average W-CDMA output at P1dB-class compression, a wide operating voltage range from 24 V to 32 V, on-chip 50 ohm matching for both stages, integrated ESD protection on the RF pins, and a thermally enhanced TO-270 plastic overmold package with a gull-wing lead form suitable for high-volume reflow and large copper ground planes. The device is characterized for single-carrier W-CDMA with 7.5 dB PAR and supports TD-SCDMA, WiMAX, and 4G LTE signal formats within its 2000-2200 MHz usable bandwidth. The MW7IC2220GNR1 uses a two-stage LDMOS architecture with on-chip input matching, inter-stage matching, and output matching. Quiescent bias is set externally with a gate reference network; quiescent currents of IDQ1 = 80 mA and IDQ2 = 300 mA at 28 V are recommended for W-CDMA linearity. ACPR is measured in 3.84 MHz channel bandwidth at +/-5 MHz offset per the NXP datasheet. Typical applications include W-CDMA/LTE driver stages in macro base stations, 2.1 GHz repeater and small-cell transmitters, TD-SCDMA infrastructure, and general-purpose 2000-2200 MHz linear amplification where 2 W average is required. The integrated matching reduces external component count and simplifies PCB layout. When designing with this device, ensure the heatsink and PCB copper area keep the junction temperature below 200 C at the worst-case Pdiss, and follow the NXP reference design bias network to maintain ACPR margin across temperature. Decouple VDD with low-ESR ceramic plus bulk electrolytic capacitors placed within 5 mm of the leads.
MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP
The NXP MW7IC2220NBR1 is a single W-CDMA RF LDMOS wideband integrated power amplifier operating from 2110 to 2170 MHz with 2 W average output power and 28 V supply. Housed in a TO-272WB-16 over-molded plastic package, the device integrates a two-stage LDMOS power amplifier with on-chip input and output matching networks that allow instant deployment from 2000 to 2200 MHz without external matching. An RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) power amplifier is a specialized transistor structure used in wireless infrastructure where high RF output power, high efficiency, and ruggedness against mismatch are required. It belongs to the LDMOS family of power transistors, which sit in the broader hierarchy of RF power devices -> RF amplifiers -> wireless infrastructure ICs -> semiconductor. LDMOS technology dominates cellular base station power amplifier design because it offers high breakdown voltage, excellent thermal performance, and stable operation under VSWR stress conditions. The MW7IC2220NBR1 features approximately 31 dB small-signal gain, 28 V drain bias with 24 to 32 V operating range, and built-in ESD protection. The integrated quiescent current setting reduces external component count, and the TO-272WB-16 over-molded plastic package provides a low thermal resistance path to the system heatsink. The device supports all major cellular modulation formats including TD-SCDMA, W-CDMA, and LTE when operated within the 2.11-2.17 GHz downlink band. Typical applications include W-CDMA/LTE base station driver stages, TD-SCDMA repeater amplifiers, and 2 GHz band RF power blocks for small-cell infrastructure. Designers value the part for its multi-stage architecture that delivers high gain in a single footprint, eliminating the need for separate driver and final-stage components. The on-chip matching reduces PCB complexity and BOM cost while maintaining broadband flatness. When designing with this part, attention to thermal management is critical: at 2 W average output and 28 V supply, the device dissipates significant DC power, and the TO-272WB-16 package requires a properly mounted heatsink or cold plate. Input and output 50 ohm interfaces are already matched on-die, so the external PCB only needs standard transmission-line routing and DC blocking/bias feed networks per the manufacturer datasheet.
MW7IC2220NR1 - 2W W-CDMA RF LDMOS PA, 2110-2170 MHz, 28V | NXP
The NXP MW7IC2220NR1 is a wideband integrated RF power amplifier built on LDMOS technology, designed for single-carrier W-CDMA base-station transmitters in the 2110-2170 MHz band and factory-characterized to 2 W average output power at 28 V. The part is housed in a TO-270WB-16 over-mold plastic package with on-chip input and output matching, so the external matching network is minimized and 50 ohm system integration is simplified for designers. An RF power amplifier (RF PA) is the final amplification stage in a wireless transmitter chain, boosting low-level radio signals from the transceiver up to the watt-level power required to drive the antenna, and it directly determines cellular base-station range, linearity, and link budget. Within the transmitter hierarchy, the RF PA sits after the up-conversion mixer and before the duplexer/filter, and it belongs to the LDMOS (Laterally Diffused Metal-Oxide Semiconductor) family of high-frequency power transistors that dominate cellular infrastructure below ~3 GHz because of their high gain, high efficiency, and excellent ruggedness. The MW7IC2220NR1 specifically targets the cellular downlink band 2110-2170 MHz, supports W-CDMA, TD-SCDMA and similar modulation formats, and integrates a two-stage amplifier structure in a single die. Key specifications include 31 dB small-signal gain, 28 V typical drain supply, 300 mA quiescent current (IDQ2), and an operational frequency range from 2000 MHz to 2200 MHz per the manufacturer's wideband test fixture characterization. The on-chip matching allows the part to be used directly in 50 ohm reference designs without external impedance transformation networks, simplifying both the schematic and PCB layout. Architecturally, the device is a two-stage LDMOS amplifier with internal inter-stage matching and bias networks optimized for W-CDMA linearity. The NXP datasheet specifies ACPR (Adjacent Channel Power Ratio) performance measured under 3.84 MHz channel bandwidth and +/-5 MHz offset in the Freescale 2110-2170 MHz test fixture, with the input signal at 7.5 dB PAR, providing a realistic worst-case linearity reference for system designers. Typical applications include W-CDMA/TD-SCDMA base-station driver or output stages, 2.1 GHz band pico-cell and femto-cell power amplifiers, repeater and small-cell transmit chains, and general-purpose 2000-2200 MHz RF amplification where high gain and rugged LDMOS performance are required. When designing with this part, allocate enough PCB copper area under the exposed flange for thermal dissipation and follow the NXP reference layout and bias sequence recommendations. Designers should also respect the absolute maximum drain voltage of 32 V and provide proper sequencing on VGG to prevent device damage during power-up. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, and practical design guidance not aggregated on standard catalog listings, helping engineers shorten the BOM-selection cycle for cellular PA designs.
MW7IC2240NBR1 - 4W W-CDMA RF LDMOS Power Amplifier | NXP
The NXP MW7IC2240NBR1 is a single W-CDMA RF LDMOS wideband integrated power amplifier delivering 4 W average output power across 2110-2170 MHz from a 28 V supply in a TO-272 WB-16 over-molded plastic package. The device achieves a minimum gain of 30 dB with on-chip input and output matching to 50 ohms, and supports typical cellular base-station modulation formats including TD-SCDMA, W-CDMA and LTE. Functional testing conditions are VDD = 28 Vdc, IDQ1 = 90 mA, IDQ2 = 420 mA, Pout = 4 W Avg., f = 2112.5 MHz, single-carrier W-CDMA with IQ magnitude clipping, PAR = 7.5 dB at 0.01% probability on CCDF, and ACPR measured in a 3.84 MHz channel bandwidth at +/-5 MHz offset. A radio-frequency power amplifier (RF PA) is the final active stage of a wireless transmitter chain, responsible for boosting a low-power modulated signal from the transceiver/exciter to a level suitable for the antenna and over-the-air transmission. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant technology for sub-6 GHz base-station PAs because it offers high power density, excellent linearity under digital modulation, robust VSWR tolerance, and cost-effective 28-32 V operation. The MW7IC2240NBR1 sits within the hierarchy: RF power amplifier -> power amplifier -> amplifier IC -> RF & wireless -> semiconductor. The MW7IC2240NBR1 features 50 ohm on-chip matching, which removes the need for external input/output matching networks and simplifies PCB layout. Two quiescent-current bias pins (IDQ1 = 90 mA, IDQ2 = 420 mA) allow independent bias setting for the driver and final stages to optimize gain, linearity, and efficiency. The device is 100% PAR-tested for guaranteed output power capability under W-CDMA-like signals and is characterized with series equivalent large-signal impedance parameters and common-source S-parameters for accurate system-level simulation. This page synthesizes distributor stock, pricing tiers, and same-package drop-in alternatives sourced from the manufacturer datasheet and cross-reference tools - information not aggregated on a single distributor page.
MW7IC2240NR1 - 4W W-CDMA RF LDMOS PA, 2110-2170 MHz | NXP
The NXP MW7IC2240NR1 is a single W-CDMA RF LDMOS wideband integrated power amplifier delivering 4 W average output power across the 2110-2170 MHz band from a 28 V supply. It is housed in a 16-pin TO-270 WBL-16 (TO-270WB16) ceramic package with on-chip input matching (50 ohm, DC-blocked) and partial output matching (>3 ohm). According to the NXP datasheet, the multi-stage structure is rated for 24 V to 32 V operation and covers all typical cellular base-station modulation formats including TD-SCDMA, W-CDMA, and LTE-FDD. An RF power amplifier (RF PA) is the final active stage in a wireless transmitter that boosts a low-level modulated RF signal to a transmission power level suitable for radiation by the antenna. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) has historically been the dominant PA technology for sub-3.5 GHz macro-cell base stations because of its high power density, mature supply chain, excellent ruggedness into high VSWR loads, and good linearity at reasonable cost. Within the transmitter chain, an RF PA sits between the driver amplifier and the duplexer/filter, feeding the antenna through the radio's front-end module. Key specifications include 4 W average output power (W-CDMA), 15 dB minimum power gain, 28 V typical drain supply, and stable operation into a 5:1 VSWR load. The device integrates quiescent-current temperature compensation and an enable function, simplifying bias sequencing across the radio's temperature range. All spurs are specified below -60 dBc from 100 mW to 10 W CW Pout, and the part is characterized with series equivalent large-signal impedance parameters and common-source S-parameters for accurate circuit-level simulation. The MW7IC2240NR1 uses NXP's 7th-generation LDMOS process with on-chip matching networks that eliminate the external inter-stage match required by discrete PA designs. This integration reduces board area and BOM count while improving unit-to-unit gain and phase repeatability, both of which are critical for Doherty and other efficiency-boosting architectures in modern base-station line-ups. Typical applications include W-CDMA/LTE base-station driver stages, TD-SCDMA power amplifiers, multi-carrier GSM/EDGE linear amplifiers, and general-purpose 2.11-2.17 GHz RF transmitters. The wide 2000-2200 MHz usable bandwidth also makes it useful for industrial ISM-band links adjacent to the cellular band. When designing with this part, ensure the PCB uses the recommended land pattern with a continuous ground pad under the ceramic body for thermal dissipation, and respect the 32 V maximum drain supply to avoid exceeding the LDMOS breakdown voltage under load transients. A proper heatsink or cold plate is required at full Pout to keep the die within its 200 C maximum junction temperature rating. This page synthesizes distributor pricing, drop-in same-package alternatives from the MW7IC2240 family, and practical design notes not found in the manufacturer datasheet.
MW7IC2425GNR1 - 25W 2.45GHz RF Power MOSFET | NXP Semiconductors
The NXP Semiconductors MW7IC2425GNR1 is a lateral N-channel enhancement-mode RF power MOSFET designed primarily for CW large-signal output and driver stages at 2450 MHz, delivering 25 W CW output power from a 28 V supply in a TO-270 WBL-16 gull-wing package. The part integrates two stages (driver + final) on a single die to simplify PCB layout at industrial-scientific-medical (ISM) bands. The device is specified for a nominal 27.7 dB power gain at 2.45 GHz with a quiescent supply current of approximately 195 mA. An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor optimized to deliver measurable radio-frequency power into a matched load, typically a transmission line and antenna. Within the RF semiconductor hierarchy, the MW7IC2425GNR1 sits between small-signal RF transistors (<1 W) and high-power pulsed radar discretes (hundreds of watts). Lateral N-channel enhancement-mode construction places the gate, drain, and source laterally on the silicon, which reduces parasitic capacitances and improves high-frequency gain compared to vertical DMOS structures. Key features include a 28 V supply rating, 25 W CW output, 27.7 dB small-signal gain at 2.45 GHz, integrated two-stage design, and a TO-270 WBL-16 over-molded plastic package with gull-wing leads for surface-mount reflow. The device is characterized for CW operation, simplifying thermal design compared with pulsed-only parts because the average dissipation equals the peak dissipation at full duty cycle. Architecturally, the die combines an input driver FET and a larger output final FET matched through internal inter-stage networks. The enhancement-mode gate threshold means the part is off at zero VGS, eliminating the need for a negative bias supply that depletion-mode parts require. The two-stage integration removes a DC blocking cap and a matching section from the PCB, reducing board area at 2.4 GHz where quarter-wave traces are short. Typical applications include 2.45 GHz ISM band industrial heating, microwave oven solid-state replacement modules, RF energy delivery for medical hyperthermia and ablation, and scientific plasma generation. The 27.7 dB gain supports driver-final chains where a single upstream gain block reaches rated output without an additional PA stage. When designing with this device, maintain drain-source voltage below 28 V and ensure the load-pull impedance at the output is presented with low-loss matching networks; PCB trace losses at 2.45 GHz are non-negligible and degrade both gain and efficiency. Adequate thermal copper under the exposed pad of the TO-270 package is essential for CW operation. This page synthesizes distributor pricing, drop-in same-package alternatives (TO-270 WBL-16), and practical RF thermal design notes not collected in the manufacturer datasheet.
MW7IC2750GNR1 - 8W 2.3-2.7GHz WiMAX RF Power Amplifier | NXP
The NXP MW7IC2750GNR1 is an RF LDMOS wideband integrated power amplifier designed for 2300-2700 MHz WiMAX base-station applications, delivering 8 W average output power at 28 V supply in a TO-270 WB-14 gull-wing surface-mount package. The multi-stage structure is rated for 26 V to 32 V operation and integrates on-chip input and output matching networks that simplify board-level implementation. Typical gain is 26 dB across the operating band with 50 ohm characteristic impedance, and the device draws approximately 550 mA quiescent current at the nominal 28 V supply rail. An RF power amplifier (RF PA) is the final active stage in a wireless transmitter chain that boosts low-level modulated RF energy up to a level suitable for radiation by an antenna. RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a transistor technology optimized for high-power, high-frequency operation in base-station and broadcast transmitters; it sits within the broader hierarchy of power amplifier technologies (LDMOS -> RF power transistor -> power semiconductor -> discrete semiconductor). For OFDM-based systems such as WiMAX, WiBro, and broadband wireless access, the RF PA must simultaneously deliver high linearity and high efficiency while dissipating tens of watts of DC power. Key differentiating features of the MW7IC2750GNR1 include on-chip matching that eliminates external baluns and matching components, integrated two-stage topology that simplifies driver chain design, and broadband operation across the full 2300-2700 MHz band without band-specific tuning. The TO-270 WB-14 package provides a high thermal-conductivity flange on the back side of the device for direct solder attachment to the PCB ground plane, enabling efficient heat extraction from the active die. This device is fabricated using NXP's high-voltage LDMOS process, which provides high breakdown voltage (>65 V drain-source rating per the package marking referenced in the AiPCBA listing), excellent thermal stability, and proven long-term reliability in continuous-wave and modulated service. The integrated matching networks present a nominal 50 ohm interface at both RF ports, allowing the amplifier to be used as a drop-in gain block with standard test equipment and PCB transmission-line structures. Typical applications include 2.3-2.7 GHz WiMAX and WiBro base-station power amplifiers, broadband wireless access (BWA) infrastructure, OFDM multicarrier Class AB and Class C amplifier stages, and driver or output stages for higher-power cascaded transmitter chains. The device is qualified for cellular base-station modulation formats including WiMAX, LTE (in legacy 2.6 GHz deployments), and similar OFDM waveforms. When designing with this part, ensure the PCB provides a continuous ground plane and thermal via array directly under the package flange to keep junction temperature within rated limits. Decouple the VDD supply with a low-ESR bulk capacitor located close to the device leads, and follow the manufacturer evaluation-board layout to preserve the on-chip matching network's intended 50 ohm environment. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
MW7IC2750NBR1 - 50W WiMAX RF LDMOS Power Amplifier | NXP
The NXP MW7IC2750NBR1 is a multi-stage RF LDMOS wideband integrated power amplifier designed for WiMAX and cellular base station applications in the 2.3 GHz to 2.7 GHz band. It delivers 8 W average output power (50 W P1dB) from a 28 V supply, with 26 dB power gain and on-chip input/output matching that eliminates external tuning networks. Housed in a TO-272 WB-14 overmolded plastic package with flat leads, the device uses NXP's high-voltage 26 V to 32 V LDMOS IC technology and integrates bias networks, ESD protection, and input pre-matching on a single die. A wideband integrated power amplifier is a multi-stage RF amplifier whose internal matching networks, bias sequencing, and gain blocks are co-integrated so that the designer places a single component on the PCB rather than building a discrete chain of driver and final-stage transistors. Within the RF power device hierarchy, this part sits above discrete LDMOS transistors and below multi-chip power amplifier modules; it belongs to the larger family of base-station power amplifiers that includes the LDMOS, GaN, and GaAs lineages. The MW7IC2750NBR1's on-chip matching is what makes the part usable across the full 400 MHz WiMAX band without tuning. Key features include 26 dB typical gain across the band, 47 dBm (50 W) P1dB output, approximately 55% drain efficiency at 8 W average, integrated ESD protection, and Pb-free NiPdAu lead finish compatible with reflow profiles above 260 C peak. The TO-272 package provides low thermal resistance and is designed for direct solder attachment to a copper-clad PCB heatsink. The device is implemented as a two-stage LDMOS amplifier with integrated bypass capacitors and matching. The 28 V nominal supply is the same bias used in cellular base stations, which lets the part share power supply rails with the rest of the BTS RF chain. The wideband on-chip matching achieves the full 2.3 to 2.7 GHz band without external tuning, simplifying multi-standard base station design. Typical applications include 2.3 to 2.7 GHz WiMAX base station final stage, cellular BTS driver amplifiers operating in the 2.5 GHz band, public safety radio repeaters, and broadband RF test instrumentation where 8 W average CW or pulsed power is required. When designing with this part, provide adequate copper heatsinking for the TO-272 package lead frame to manage thermal rise at 50 W output. Maintain Vds below the 32 V maximum and ensure the gate bias sequencing follows NXP's recommended ramp profile to prevent forward-biasing the gate. This page synthesizes distributor pricing from fifteen sources, drop-in LDMOS alternatives, and practical base-station design notes not assembled in the manufacturer datasheet alone.
MW7IC3825GNR1 - 3.4-3.6GHz, 5W LDMOS RF Power Amplifier | NXP
The NXP MW7IC3825GNR1 is a multi-stage RF LDMOS wideband integrated power amplifier designed for 3400-3600 MHz WiMax and cellular base station applications, delivering 5 W average output power in a TO-270 WBL-16 gull-wing surface-mount package. It supports 26-32 V supply operation, draws approximately 230 mA of supply current, and provides a typical power gain of 25 dB with on-chip input and output matching that eliminates the need for external matching networks across the operating band. An RF power amplifier (RF PA) is the final active stage in a wireless transmitter chain that boosts a low-level modulated RF signal up to the watt-level power required to drive an antenna. RF PAs are evaluated against three critical figures of merit - efficiency (DC-to-RF conversion), linearity (fidelity of amplified modulation), and gain (signal amplification magnitude in dB) - and they are categorized by device technology including LDMOS (Laterally Diffused Metal-Oxide Semiconductor), GaN (Gallium Nitride), and GaAs (Gallium Arsenide). RF power amplifiers sit within the broader hierarchy of RF and microwave components > discrete semiconductors > power transistors. LDMOS technology remains the workhorse for sub-3.8 GHz cellular infrastructure because of its high efficiency, easy broadband matching, and low cost per watt compared to GaN. Key features of the MW7IC3825GNR1 include integrated on-chip matching for the entire 3400-3600 MHz band, multi-stage internal topology that delivers high gain in a single IC, and high power added efficiency (PAE) typical for class-AB operation. The device is rated for 26 V to 32 V supply operation and includes built-in protection circuitry against high VSWR (Voltage Standing Wave Ratio) conditions up to 10:1, making it rugged for base station environments where antenna mismatches are common. The MW7IC3825N family uses NXP's seventh-generation LDMOS process with a multi-stage cascade that combines a driver stage and a final power stage on a single die. Internal matching networks use bond-wire inductors and integrated capacitors to present 50 ohm interfaces at input and output, which simplifies board layout and reduces the BOM (Bill of Materials) compared to discrete PA solutions requiring external baluns and combiners. Typical applications include WiMax base station final-stage amplifiers, 3.5 GHz fixed-wireless CPE (Customer Premises Equipment) transmitters, LTE small-cell / picocell infrastructure operating in the 3.4-3.6 GHz band, and military or industrial RF communication links in the same band. When designing with this part, ensure that the PCB uses a copper-flanged backside mount with sufficient thermal vias to keep the junction temperature under the datasheet maximum. Because the device is designed for 50 ohm systems, antenna mismatches above 10:1 VSWR require an external isolator or circulator to protect the output stage. This page synthesizes distributor pricing, package-level pinout analysis, and application guidance that complement (and do not replace) the NXP manufacturer datasheet for the MW7IC3825GNR1.
MW7IC915NT1 - 1.6W W-CDMA RF LDMOS PA, 728-960 MHz | NXP
The NXP MW7IC915NT1 is a 1.6 W average output, 28 V RF LDMOS wideband integrated power amplifier covering 728 MHz to 960 MHz in a 24-PQFN (8x8 mm) over-molded plastic package. Designed for W-CDMA and multi-carrier cellular base station applications, it integrates two amplifier stages with on-chip input and inter-stage matching, allowing immediate drop-in use across the full 698-960 MHz band. An RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-level modulated RF signal to the high power level required to drive an antenna. Within the transmitter signal chain, the PA sits between the transceiver/upconverter and the duplexer/filter, and it is the dominant contributor to DC power consumption at the base station. RF LDMOS (Laterally Diffused Metal-Oxide Semiconductor) technology, on a high-resistivity silicon substrate, has been the industry workhorse for sub-3 GHz cellular base station PAs since the 1990s because of its high power density, excellent gain linearity, and cost-effective volume manufacturing. The MW7IC915N family belongs to this lineage as a multi-stage integrated PA module rather than a discrete transistor. Key features include 38 dB typical gain, 1.6 W average output power for W-CDMA at 28 V, multi-stage on-chip matching that eliminates external RF tuning, integrated bias networks for simplified gate biasing, and an operating supply range of 26 V to 32 V. The 24-PQFN over-molded plastic package provides a low thermal-resistance path and is compatible with automated surface-mount assembly, reducing both board space and manufacturing cost versus ceramic flanged packages. Typical applications include 700/800/900 MHz cellular base station power amplifiers, W-CDMA and LTE driver/final stages, repeaters and small-cell infrastructure, and industrial/scientific/medical (ISM) band transmitters that share the 902-928 MHz range. The wideband on-chip matching makes a single SKU usable across multiple regional cellular bands. When designing with this part, follow the manufacturer's recommended PCB layout exactly: keep RF input/output traces 50 ohm controlled-impedance, place the device on a board with sufficient copper thermal mass, and decouple the drain supply with the value and type of bypass capacitor specified in the reference design. The on-chip matching assumes the standard evaluation board stack-up; deviation degrades gain, efficiency, and stability.
MWE6IC9080NBR1 - 80W 865-960MHz RF LDMOS PA | NXP
The NXP MWE6IC9080NBR1 is an RF LDMOS wideband integrated power amplifier designed for the 865-960 MHz cellular band, delivering 80 W CW output power from a 28 V supply in a TO-272 WB-14 over-molded plastic package. It is one of three variants in the MWE6IC9080N family (NR1/GNR1/NBR1) sharing the same die and on-chip matching network, with the NBR1 suffix denoting the tape-and-reel packaging option. The part is targeted at GSM and GSM EDGE base-station infrastructure and other broadband industrial applications where a multi-stage, internally matched PA in the 900 MHz band is required. Background: A RF power amplifier (PA) is the final active stage in a wireless transmitter that boosts a low-power modulated RF signal up to a level suitable for radiation by the antenna. LDMOS (Laterally Diffused Metal Oxide Semiconductor) is a planar MOS transistor technology that has dominated cellular base-station PAs since the 1990s because it offers a good compromise of gain, efficiency, ruggedness, and cost at HF/VHF/UHF frequencies below ~3 GHz. Wideband integrated PAs like the MWE6IC9080NBR1 integrate the input/output matching networks, biasing, and multiple gain stages on a single die, eliminating external RF tuning and simplifying the host PCB. The family hierarchy is: power amplifier → RF amplifier IC → wideband integrated PA → LDMOS PA → RF semiconductor. Key features of the MWE6IC9080NBR1 include 80 W CW (continuous-wave) output power, operation across the full 865-960 MHz band, 26-32 V supply voltage, integrated on-chip matching for both input and output, multi-stage gain structure, and high gain (around 27 dB per published listings). The amplifier is designed to cover all typical cellular base-station modulations including GSM, GSM EDGE, and similar constant-envelope or linear formats within its frequency range. Architecture: The MWE6IC9080NBR1 uses a multi-stage LDMOS common-source topology with on-chip input and output matching. This eliminates the PCB-level RF tuning work that discrete PA designs require and reduces BOM count. The 26-32 V drain bias range provides headroom for either standard 28 V rails or higher-efficiency envelopes. Because the matching is internal, the part is usable across the entire 865-960 MHz range without component changes. Typical applications include GSM/EDGE cellular base-station power amplifiers, 900 MHz industrial/scientific/medical (ISM) transmitters, UHF RFID readers, two-way radio repeaters in the 900 MHz band, and broadband commercial RF amplification where a single part can replace narrowband tuned designs. Design consideration: Adequate heatsinking is mandatory at 80 W CW. With ~27 dB gain and 80 W output, dissipation in the matching network and device can easily exceed tens of watts, so the TO-272 WB-14 flange must be mounted to a substantial copper heat spreader or chassis. This page synthesizes distributor pricing, verified same-family drop-in alternatives, and practical RF design notes not found in the bare manufacturer datasheet.