2EDN7434RXTMA1 vs 1EDN7136GXTMA1 Сравнение
Подробное сравнение бок о бок 2EDN7434RXTMA1 от Infineon и 1EDN7136GXTMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | 2EDN7434RXTMA1 | 1EDN7136GXTMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,34 | $1,02 |
| Manufacturer | Infineon Technologies | — |
| Part Family | EiceDRIVER 2EDN | — |
| Driver Configuration | Dual-channel low-side | — |
| Number of Drivers | 2 | — |
| Peak Output Current | 5 A (source/sink) | — |
| Rated Output Current | 4 A | — |
| Output Resistance (Low) | [DATA_NEEDED: output resistance Ron low] | — |
| Output Resistance (High) | [DATA_NEEDED: output resistance Ron high] | — |
| Propagation Delay (Typ.) | 19 ns | — |
| Input Logic Compatibility | LV-TTL, non-inverting | — |
| Absolute Max Input Voltage | -12 V to +22 V | — |
| Supply Voltage Range | [DATA_NEEDED: VDD range] | — |
| Корпус | PG-TSSOP-8 (3.0 x 3.0 mm) | PG-VSON-10-4 (leadless, thermal pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | [DATA_NEEDED: operating temperature] | — |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Active Output Voltage Clamping | Yes | — |
| Product Type | — | Low-side gate driver IC |
| Configuration | — | Single channel, non-inverting |
| Peak Source Current | — | 4 A |
| Peak Sink Current | — | 8 A |
| Target Switch | — | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | — | TTL/CMOS compatible |
| UVLO | — | Yes (VDD under-voltage lockout) |
| Propagation Delay | — | Sub-nanosecond class |
| Рабочая температура | — | -40 C to +125 C |
| Lead-free | — | Yes |
| Input Voltage (VDD) | — | [DATA_NEEDED: VDD range V] |
| Output Voltage (GaN gate) | — | Approximately 6 V (regulated) |