2EDN7434RXTMA1 vs 1EDN7136GXTMA1 Comparison
Detailed side-by-side comparison of 2EDN7434RXTMA1 by Infineon and 1EDN7136GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | 2EDN7434RXTMA1 | 1EDN7136GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Family | EiceDRIVER 2EDN | — |
| Driver Configuration | Dual-channel low-side | — |
| Number of Drivers | 2 | — |
| Peak Output Current | 5 A (source/sink) | — |
| Rated Output Current | 4 A | — |
| Output Resistance (Low) | [DATA_NEEDED: output resistance Ron low] | — |
| Output Resistance (High) | [DATA_NEEDED: output resistance Ron high] | — |
| Propagation Delay (Typ.) | 19 ns | — |
| Input Logic Compatibility | LV-TTL, non-inverting | — |
| Absolute Max Input Voltage | -12 V to +22 V | — |
| Supply Voltage Range | [DATA_NEEDED: VDD range] | — |
| Package | PG-TSSOP-8 (3.0 x 3.0 mm) | PG-VSON-10-4 (leadless, thermal pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature] | — |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Active Output Voltage Clamping | Yes | — |
| Product Type | — | Low-side gate driver IC |
| Configuration | — | Single channel, non-inverting |
| Peak Source Current | — | 4 A |
| Peak Sink Current | — | 8 A |
| Target Switch | — | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | — | TTL/CMOS compatible |
| UVLO | — | Yes (VDD under-voltage lockout) |
| Propagation Delay | — | Sub-nanosecond class |
| Operating Temperature | — | -40 C to +125 C |
| Lead-free | — | Yes |
| Input Voltage (VDD) | — | [DATA_NEEDED: VDD range V] |
| Output Voltage (GaN gate) | — | Approximately 6 V (regulated) |