BSC050NE2LSATMA1 vs BSZ036NE2LSATMA1 Сравнение
Подробное сравнение бок о бок BSC050NE2LSATMA1 от Infineon и BSZ036NE2LSATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon
BSZ036NE2LSATMA1 ✓ АктивенСравнение характеристик
| Параметр | BSC050NE2LSATMA1 | BSZ036NE2LSATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,36 | $0,42 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 25 V | — |
| Continuous Drain Current (I_D) at Tc=25C | 58 A | — |
| Continuous Drain Current (I_D) at Ta=25C | 39 A | — |
| R_DS(on) max at V_GS=10V | 5 mOhm | — |
| R_DS(on) typical at V_GS=10V | 4.2 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.5 W | — |
| Power Dissipation at Tc=25C | 28 W | — |
| Technology | OptiMOS 25V (trench) | — |
| Корпус | PG-TDSON-8-5 (SuperSO8 5x6 mm) | PG-TSDSON-8-FL (5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +150C | -55C to +150C |
| Статус RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 25V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 25 V |
| Continuous Drain Current (ID) at TA=25C | — | 16 A |
| Continuous Drain Current (ID) at TC=25C | — | 40 A |
| Power Dissipation (PD) at TA=25C | — | 2.1 W |
| Power Dissipation (PD) at TC=25C | — | 37 W |
| Configuration | — | Single |
| Уровень MSL | — | 1 (Unlimited) |
| Lead-Free | — | Yes |
| Gate Drive | — | Logic-level compatible |