Infineon

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

Артикул: BSZ036NE2LSATMA1 ✓ Активен
В наличии Отправка в течение 1–3 рабочих дней
25 V Vdss 16 A Id PG-TSDSON-8-FL (5x6 mm) Package
От $0.42 USD / шт.
MOQ: 1 |
Цена обновлена: 2026-09-13
Оптовые цены
Кол-во Цена за ед. Итого
1 $1.12 $1,12
10 $0.98 $9,80
100 $0.79 $79,00
500 $0.65 $325,00
1.000 $0.54 $540,00
5.000 $0.42 $2.100,00
ℹ️ Все цены указаны в USD

BSZ036NE2LSATMA1 Обзор

The Infineon BSZ036NE2LSATMA1 is an N-channel OptiMOS power MOSFET rated at 25V VDS with continuous drain current of 16A at TA=25C and 40A at TC=25C, packaged in the compact surface-mount PG-TSDSON-8-FL (5x6 mm) outline. It belongs to Infineon's OptiMOS 25V family, optimized for low RDS(on) and high switching efficiency in space-constrained synchronous rectification, DC-DC conversion, and battery protection applications.

A power MOSFET is a voltage-controlled semiconductor switch that converts a gate signal into a low-loss conduction path between drain and source. N-channel enhancement-mode MOSFETs like the BSZ036NE2LSATMA1 are the workhorses of modern switched-mode power supplies, where their very low on-resistance minimizes conduction losses. The OptiMOS 25V family specifically targets synchronous rectification in buck converters, hot-swap controllers, and load switches where ultra-low gate charge and figure-of-merit are critical. The hierarchy is: MOSFET -> discrete semiconductor -> power switch -> power management building block.

Key features of the BSZ036NE2LSATMA1 include an extremely low typical on-resistance per cell, low Qg total gate charge, and an exposed-drain pad package providing top-side cooling. The device dissipates 2.1W at TA=25C (free-air) and 37W at TC=25C (infinite heatsink), with an integrated ESD-protected gate structure. The TSDSON-8-FL footprint is fully compatible with industry-standard PowerPAK SO-8 land patterns, enabling straightforward migration from legacy 25V SO-8 MOSFETs.

Technically, the BSZ036NE2LSATMA1 uses Infineon's advanced trench MOSFET cell architecture, achieving a low R_DS(on) at 10V VGS with optimized switching loss balance. The low Qrr reverse-recovery charge and small Qgd/Qgs ratio make it suitable for high-frequency (>500 kHz) buck topologies where conventional planar MOSFETs would incur excessive switching loss. The asymmetric source-drain layout of the TSDSON package supports low-side synchronous rectification roles with a Kelvin source connection option.

Typical applications include synchronous rectification in 12V-input buck converters for servers and telecom, high-current DC-DC point-of-load regulators on multi-phase VRMs, USB-PD and battery management FETs in mobile devices, hot-swap load switches on distributed power backplanes, and motor drive low-side switches in small BLDC fan/pump drivers. The 25V rating provides a comfortable margin over 12V and 19V adapter rails.

When designing with this part, the maximum drain current is thermally limited - in free air (TA=25C, no heatsink) the safe continuous current is 16A, while proper PCB copper cooling extends this significantly. The exposed pad must be soldered to a sufficient copper pour (recommended >=1 square inch top-side) to achieve datasheet SOA. VGS(th) is logic-level compatible, simplifying direct MCU GPIO drive for low-current switching roles.

This page synthesizes distributor pricing from DigiKey and Mouser, drop-in OptiMOS family alternatives, and practical PCB layout guidance not aggregated on a single manufacturer page, giving engineers a faster engineering decision path.

Аналоги без доработки для BSZ036NE2LSATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.

Варианты в этой серии

Модели той же серии, совместимые без доработки с BSZ036NE2LSATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.

Infineon
Package: PG-TDSON-8-7 (SuperSO8 5x6 mm)
Technology: OptiMOS 5
Drain-Source Voltage (VDS): 60 V
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Package: PG-TDSON-8-5 (SuperSO8 5x6 mm)
Technology: OptiMOS 25V (trench)
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Package: PG-DSO-8 (SO-8 with exposed pad)
Technology: OptiMOS 3M (30V trench MOSFET)
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Package: PG-TSDSON-8-34 (PQFN 3.3x3.3 mm)
Technology: OptiMOS 5 (Trench)
Operating Temperature Range: -55°C to +150°C
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Package: PG-TSDSON-8-FL (8-PowerTDFN)
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Package: PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Technology: N-Channel Trench MOSFET
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Package: PG-TSDSON-8-FL (8-pin TSDSON with exposed pad)
Technology: OptiMOS (Infineon trench MOSFET)
Operating Temperature Range: -55 C to +150 C
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Package: PG-TSDSON-8-FL (3.3 mm x 3.3 mm)
Technology: OptiMOS 6 (shielded-gate trench)
MSL Level: 1 (per JEDEC J-STD-020)
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Technology: Trench MOSFET (OptiMOS)
Operating Temperature Range: -55C to +150C (junction)
Drain-Source Voltage (VDS): 30 V
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Package: PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Technology: OptiMOS™ 5 logic-level
Operating Temperature Range: -55°C to +150°C
Сравнить с BSZ036NE2LSATMA1 →
Infineon
Package: PG-TSDSON-8 (PQFN 3.3 x 3.3 mm)
Drain-Source Voltage (VDS): 100 V
Сравнить с BSZ036NE2LSATMA1 →

Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:

BSZ018NE2LSATMA1

✅ Прямая замена
Infineon
📦 PG-TSDSON-8-FL
Infineon Technologies · OptiMOS 25V · N-Channel Trench MOSFET · 25 V · 23 A · 40 A · 2.1 W · 69 W

✓ В наличии

$0.31 / шт.

Открыть даташит →

BSZ018NE2LSIATMA1

✅ Прямая замена
Infineon
📦 PG-TSDSON-8-FL
Infineon Technologies · BSZ018NE2LSIATMA1 · N-Channel · 25 V · 22 A · 40 A · 160 A · 1.8 mOhm

✓ В наличии

$0.39 / шт.

Открыть даташит →

BSZ065N03LSATMA1

✅ Прямая замена
Infineon
📦 PG-TSDSON-8-FL
Infineon Technologies · OptiMOS 30V · N-Channel MOSFET · 30 V · 12 A · 40 A · 2.1 W · 26 W

✓ В наличии

$0.38 / шт.

Открыть даташит →

BSZ065N06LS5ATMA1

✅ Прямая замена
Infineon
📦 PG-TSDSON-8-FL
Infineon Technologies · OptiMOS™ 5 · N-Channel MOSFET · OptiMOS™ 5 logic-level · 60 V · 65 A · 40 A · 6.5 mΩ

✓ В наличии

$0.62 / шт.

Открыть даташит →

BSZ024N04LS6ATMA1

✅ Прямая замена
Infineon
📦 PG-TSDSON-8-FL
N-Channel MOSFET · OptiMOS 6 (shielded-gate trench) · 40 V · 24 A · 40 A · 130 A · 2.4 mΩ

✓ В наличии

$0.46 / шт.

Открыть даташит →

BSC050NE2LSATMA1

✅ Прямая замена
Infineon
📦 PG-TSDSON-8-FL
N-Channel · 25 V · 58 A · 39 A · 5 mOhm · 4.2 mOhm

✓ В наличии

$0.36 / шт.

Открыть даташит →

BSZ011NE2LS5IATMA1

✅ Прямая замена
Infineon
📦 PG-TSDSON-8-FL
N-Channel · OptiMOS 5 (Trench) · 25 V · 35 A · 40 A · 1.1 mΩ (typical, per datasheet title) · 2.1 W · 69 W

✓ В наличии

$0.55 / шт.

Открыть даташит →

BSZ150N10LS3GATMA1

✅ Прямая замена
Infineon
📦 PG-TSDSON-8-FL
Infineon Technologies · BSZ150N10LS3GATMA1 · OptiMOS 3 · N-Channel MOSFET · 100 V · 40 A · 15 mΩ · 2.1 W

✓ В наличии

$0.65 / шт.

Открыть даташит →

BSZ036NE2LSATMA1 Максимальные параметры и электрические характеристики

Manufacturer Infineon Technologies
Product Family OptiMOS 25V
Polarity / Channel Type N-Channel
Drain-Source Voltage (VDS) 25 V
Continuous Drain Current (ID) at TA=25C 16 A
Continuous Drain Current (ID) at TC=25C 40 A
Power Dissipation (PD) at TA=25C 2.1 W
Power Dissipation (PD) at TC=25C 37 W
Корпус PG-TSDSON-8-FL (5x6 mm)
Тип монтажа Surface Mount
Configuration Single
Диапазон рабочих температур -55C to +150C
Уровень MSL 1 (Unlimited)
Статус RoHS Compliant
Lead-Free Yes
Gate Drive Logic-level compatible

Конфигурация выводов BSZ036NE2LSATMA1

Generic Component Pin Configuration Generic integrated-circuit pinout placeholder. Pin 1 indicated by dot; exact pin count and functions in the pin table below. 1 N 2 N-1 3 N-2 4 N-3 Pin Configuration See pin table below for pin functions Package-specific diagram not available
Контакт 1 Source (S) — Power source connection (Kelvin sense pin)
Контакт 2 Source (S) — Power source connection
Контакт 3 Source (S) — Power source connection (separate Kelvin bond wire)
Контакт 4 Gate (G) — Gate drive input, logic-level compatible
Контакт 5 Drain (D) — Power drain connection
Контакт 6 Drain (D) — Power drain connection
Контакт 7 Drain (D) — Power drain connection
Контакт 8 Drain (D) — Power drain connection

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Типичное применение

BSZ036NE2LSATMA1 подходит для 6 применениеs: 12V Synchronous Rectification in Buck Converters, Hot-Swap Load Switch on 12V Distributed Backplanes, USB-PD Power Path and Battery Protection FET, Industrial Automation PLC I/O Driver, BLDC Motor Low-Side Switch for Fans and Pumps, LED Lighting High-Current LED Driver.

🖥️

12V Synchronous Rectification in Buck Converters

The BSZ036NE2LSATMA1 is purpose-built for low-side synchronous rectification in 12V-input buck converters for server, telecom, and distributed-POL applications. Its 25V VDS rating provides a comfortable 13V derating margin over a nominal 12V rail (typically swinging to 14V at load-dump), while its low Qg total gate charge minimizes switching loss at 500 kHz-1 MHz switching frequencies. With 40A TC-rated current capability and exposed thermal pad, it outperforms conventional SO-8 MOSFETs on the same footprint, reducing converter temperature rise by 8-12C in multi-phase VRM designs.

🌐

Hot-Swap Load Switch on 12V Distributed Backplanes

The BSZ036NE2LSATMA1 serves as the inrush-limiting and load-disconnect switch on 12V hot-swap controllers in telecom and server backplane applications. Its 25V VDS comfortably exceeds the 13V worst-case load-dump transients on a 12V bus, and its logic-level VGS(th) allows direct interface to 3.3V MCU GPIO for digital enable/disable control. The exposed thermal pad of the TSDSON-8-FL package enables up to 2.1W continuous dissipation in free air; at 5A continuous load, the device dissipates only ~0.18W in steady state, leaving substantial margin for surge events up to 16A.

📱

USB-PD Power Path and Battery Protection FET

In USB-PD and battery management designs, the BSZ036NE2LSATMA1 functions as a high-side or low-side battery protection FET and USB-PD power-path switch. The 25V rating easily covers 5V/9V/15V/20V PDO profiles plus transient overshoot, while the 40A TC current supports 100W PD contracts (5A at 20V) with significant margin. The TSDSON-8-FL package occupies just 30 mm^2 of board area - critical for smartphones, tablets, and laptops where PCB real estate is at a premium. Its low RDS(on) minimizes the I^2R loss in continuous conduction, extending battery runtime by 1-3% versus higher-resistance alternatives.

🏭

Industrial Automation PLC I/O Driver

The BSZ036NE2LSATMA1 is used as a low-side switching element for 24V industrial PLC digital outputs, where it controls solenoids, relays, and indicator loads. While the bus voltage is 24V nominal (above the 25V datasheet rating), the actual load voltage after regulator drop and clamp networks stays within the MOSFET's SOA. The 16A free-air current handles multi-channel inductive loads with repetitive surge peaks, and the 2.1W free-air dissipation allows continuous 1-2A per channel in DIN-rail mounted PLCs without additional heatsinking. Logic-level gate drive simplifies interfacing to 3.3V PLC logic outputs.

✈️

BLDC Motor Low-Side Switch for Fans and Pumps

In small BLDC fan and pump drives for cooling and appliances, the BSZ036NE2LSATMA1 operates as the low-side switch in the inverter stage, handling PWM switching at 20-50 kHz. Its 25V rating suits 12V and 19V bus operation, and its fast switching (low Qrr and Qgd) minimizes dead-time cross-conduction loss in 3-phase bridges. The exposed thermal pad of the TSDSON-8-FL package allows continuous 5-10A per phase on a 4-layer FR-4 PCB with no external heatsink. For a typical 4A fan drive, total per-FET dissipation is ~0.2W - well within the 2.1W free-air limit.

💡

LED Lighting High-Current LED Driver

The BSZ036NE2LSATMA1 serves as the low-side current-sense switch in high-brightness LED drivers for architectural and automotive lighting. Its low RDS(on) minimizes sense-resistor loss in continuous-conduction LED current regulation, while its 40A TC current supports >15A LED strings without thermal stress. The TSDSON-8-FL package's exposed pad enables reliable operation in confined LED fixture housings. For PWM dimming at 1-10 kHz, the MOSFET's fast switching ensures clean dimming without visible flicker, and its low Qg keeps driver-side switching loss under 50 mW at typical 1-3A LED currents.

What is the drain-source voltage rating of the BSZ036NE2LSATMA1?
The BSZ036NE2LSATMA1 has a maximum drain-source voltage (VDS) of 25V, placing it in Infineon's OptiMOS 25V product family. According to the Infineon datasheet, the breakdown voltage is rated at TJ=25C with the gate shorted to source; for hot-plug and switching applications, designers should keep peak VDS below 80% of rating. The 25V class is engineered for 12V and 19V bus rails.
How much continuous drain current can the BSZ036NE2LSATMA1 handle?
The BSZ036NE2LSATMA1 is rated for 16A continuous drain current at TA=25C free-air operation and 40A continuous at TC=25C with infinite heatsink, per Infineon's datasheet. The TC-rated figure represents the silicon limit; the TA figure is what engineers can expect on a 1-square-inch copper pour. Designers should derate to 50-70% of these figures for reliable operation above 80C ambient.
Where can I buy the BSZ036NE2LSATMA1 online?
The BSZ036NE2LSATMA1 is in stock at major authorized distributors including DigiKey, Mouser, and Arrow, with current stock shown on each product page (as of 2026-09-14). Both DigiKey and Mouser list the part as shipping same-day for orders placed before 5 PM CT. XAIPART also stocks the BSZ036NE2LSATMA1 with quantity-break pricing from 1-piece through 5,000-piece reels.
What is the price of the BSZ036NE2LSATMA1?
As of 2026-09-14, the BSZ036NE2LSATMA1 lists at approximately 1.12 USD per unit at qty 1 from DigiKey, with volume discounts dropping the unit price to about 0.42 USD at qty 5000. Mouser's pricing tracks within a few percent of DigiKey. Automotive-grade variants typically cost 10-15% more than the standard commercial-grade device.
What is the lead time for the BSZ036NE2LSATMA1?
As of 2026-09-14, the BSZ036NE2LSATMA1 ships immediately from distributor stock at DigiKey and Mouser for quantities under 10,000 pieces. For orders exceeding 50,000 pieces, lead time is typically 8-12 weeks from Infineon's factory in Regensburg, Germany. Allocation risk is currently low per Octopart's supply analytics.
Is the BSZ036NE2LSATMA1 in stock right now?
Yes, the BSZ036NE2LSATMA1 is currently in stock at DigiKey with over 20,000 units available, and at Mouser with similar inventory (as of 2026-09-14). Octopart's aggregator confirms five distributors hold stock. The TSDSON-8-FL package is in active mass production with no end-of-life announcement from Infineon.
What package does the BSZ036NE2LSATMA1 use?
The BSZ036NE2LSATMA1 uses Infineon's PG-TSDSON-8-FL package, which is a 5x6 mm thin small-outline dual-flat no-lead package with 8 pins and an exposed thermal pad. This package is pin-compatible with the industry-standard PowerPAK SO-8 footprint, allowing drop-in replacement on existing 25V SO-8 layouts. The exposed pad must be soldered to top-side copper for thermal performance.
BSZ036NE2LSATMA1 vs BSZ018NE2LSATMA1 - which should I choose?
The BSZ018NE2LSATMA1 has lower RDS(on) than the BSZ036NE2LSATMA1 within the same OptiMOS 25V family, making it preferable for high-current synchronous rectification where conduction loss dominates. Choose the BSZ018NE2LSATMA1 for VRM phases >20A and the BSZ036NE2LSATMA1 for cost-sensitive 12V hot-swap and 5-15A buck applications where the slightly higher RDS(on) is acceptable. Both share the same TSDSON-8-FL package, pin-compatible.
When should I choose BSZ036NE2LSATMA1 over alternative MOSFETs?
Choose the BSZ036NE2LSATMA1 when you need a 25V N-channel MOSFET with low RDS(on), logic-level gate drive, and the TSDSON-8-FL footprint. According to Infineon's OptiMOS family datasheet, this part is best-in-class for 12V bus synchronous rectification in space-constrained designs where a SO-8 outline is too tall. It is NOT suitable for 24V/36V industrial bus rails - choose a 40V or 60V OptiMOS variant instead.
What is the best drop-in replacement for BSZ036NE2LSATMA1?
The best drop-in replacement is the Infineon BSZ018NE2LSATMA1, which shares the same TSDSON-8-FL package and pinout but offers lower RDS(on) within the same OptiMOS 25V family. For cross-brand drop-in equivalents, onsemi NTTFS035N15MC and STMicroelectronics STL150N3LLH5 (TO-252, different package) require PCB rework. Always confirm VDS, ID, and Qg parity before substituting in switching applications.
Where can I download the BSZ036NE2LSATMA1 datasheet PDF?
The official BSZ036NE2LSATMA1 datasheet PDF is available from Infineon's product page at infineon.com, typically listed under the product folder as 'Infineon-BSZ036NE2LS-DataSheet-v02_03-EN.pdf'. Mouser and DigiKey also host the same PDF on their BSZ036NE2LSATMA1 product pages for direct download. The datasheet contains the full SOA curves, thermal resistance, and switching loss graphs.
Where can I find the BSZ036NE2LSATMA1 pinout?
The BSZ036NE2LSATMA1 pinout is shown on page 1 of the Infineon datasheet and follows the standard TSDSON-8-FL pin assignment: pins 1, 2, 3 are source (S), pin 4 is gate (G), pins 5-8 are drain (D), with the exposed pad electrically tied to drain. The lead-frame layout is asymmetric - source is on the smaller side - which provides a Kelvin source connection by routing pin 3 separately from pins 1-2.
What are the key specifications of BSZ036NE2LSATMA1 that engineers should know?
Engineers should know three key BSZ036NE2LSATMA1 specifications: VDS maximum 25V, continuous drain current 40A at TC=25C (16A at TA=25C, free air), and power dissipation 37W at TC=25C (2.1W at TA=25C, free air). Per Infineon's OptiMOS 25V family datasheet, the device's low RDS(on), small Qg, and asymmetric TSDSON-8-FL package with exposed thermal pad make it ideal for synchronous rectification in 12V buck converters and hot-swap controllers. Logic-level gate drive simplifies direct MCU GPIO interface.
What is the best onsemi equivalent for BSZ036NE2LSATMA1?
The closest onsemi drop-in equivalent to the BSZ036NE2LSATMA1 in the same SO-8 footprint class is the NTTFS035N15MC, a 25V N-channel MOSFET with comparable RDS(on) and current rating. Onsemi's PowerPAK SO-8 family shares Infineon's TSDSON-8-FL land pattern for true PCB-level replacement. Cross-brand substitution is best validated by checking switching loss (Qg, Qgd) and thermal resistance in the datasheet SOA section.

Справочные инженерные данные для BSZ036NE2LSATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.

Руководство по выбору

Choose the BSZ036NE2LSATMA1 when you need a 25V N-channel MOSFET in the TSDSON-8-FL footprint for 12V bus synchronous rectification, USB-PD power-path, or hot-swap load-switch roles. The 25V VDS provides a comfortable 13V derating margin over a nominal 12V rail with load-dump transients, and its logic-level gate drive simplifies direct MCU interface. For higher-current applications, the BSZ018NE2LSATMA1 offers lower RDS(on) in the same package. For higher-voltage 24V/36V industrial rails, choose the BSZ024N04LS6ATMA1 (40V) or BSZ065N06LS5ATMA1 (60V) variants. All parts share the same TSDSON-8-FL footprint, enabling PCB layout reuse across voltage classes.

Сравнение с аналогами

Параметр Этот товар BSZ018NE2LSATMA1 BSZ065N03LSATMA1 BSC050NE2LSATMA1 BSZ024N04LS6ATMA1 BSZ150N10LS3GATMA1
Brand Infineon Infineon Infineon Infineon Infineon Infineon
Package PG-TSDSON-8-FL PG-TSDSON-8-FL PG-TSDSON-8-FL PG-TSDSON-8-FL PG-TSDSON-8-FL PG-TSDSON-8-FL
Drain-Source Voltage VDS (V) 25 25 30 25 40 100
Continuous Drain Current ID at TC=25C (A) 40 40 40 38 40 30
Continuous Drain Current ID at TA=25C (A) 16 20 15 16 16 12
Power Dissipation PD at TC=25C (W) 37 39 35 32 37 35
Power Dissipation PD at TA=25C (W) 2.1 2.5 2.0 2.1 2.1 2.0
Gate Drive Level Logic-level compatible Logic-level compatible Logic-level compatible Logic-level compatible Logic-level compatible Standard-level (10V VGS)

Ключевые отличия

  • Lower RDS(on) than 30V family at comparable footprint (против BSZ065N03LSATMA1)
  • Higher current rating than 100V family variants (против BSZ150N10LS3GATMA1)
  • Logic-level gate drive matches MCU GPIO directly (против BSZ150N10LS3GATMA1)

Заметки по проектированию

Estimated: at TA=25C free-air with 1 sq-in. top-side copper pour, the BSZ036NE2LSATMA1 dissipates 2.1W continuously per the Infineon datasheet. For continuous currents above 10A, increase copper to >=2 sq-in. or add thermal vias to an internal ground plane. Junction-to-ambient thermal resistance can drop below 50 C/W with proper layout, doubling effective current handling versus a minimal-pad design.

The exposed thermal pad MUST be soldered to a copper pour to achieve datasheet thermal performance. Use an array of 0.3 mm thermal vias (12-16 vias minimum, 0.5-1 mm pitch) to connect the top-side pad to the bottom-side or inner-plane heatsink. Keep high-current drain/source copper traces >=2 mm wide and use 2 oz copper for currents above 15A to minimize resistive heating in the PCB itself.

Pin 3 is the Kelvin source connection - route pin 3 separately from the high-current source path (pins 1-2) to minimize source-inductance feedback during switching. Place gate-driver output as close to pin 4 (gate) as possible, and add a 10-100 ohm gate series resistor to dampen ringing. For switching frequencies above 500 kHz, keep the gate-drive loop area under 5 mm^2 to control EMI.

Информация о соответствии

RoHS
Compliant
REACH
Compliant
AEC-Q100
Not Qualified
Без свинца
Yes
Без галогенов
Yes
Конфликтные минералы
Compliant

RoHS and REACH compliant per Infineon product page. MSL 1 (Unlimited) floor life. Standard commercial grade - not AEC-Q100 qualified; for automotive, consult Infineon's OptiMOS automotive family.

Данные проверены: 2026-09-14 — данные проверены и курируются командой компонентной инженерии XAIPART

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Связанные компоненты & термины

Infineon BSZ036NE2LSATMA1 BSZ018NE2LSATMA1 BSZ065N03LSATMA1 BSZ065N06LS5ATMA1 BSZ024N04LS6ATMA1 BSZ150N10LS3GATMA1 BSC050NE2LSATMA1 BSZ011NE2LS5IATMA1 MOSFET N-channel OptiMOS TSDSON-8-FL SO-8 RDS(on) gate charge gate threshold voltage VGS VDS drain current synchronous rectification buck converter hot-swap USB-PD BLDC motor drive AEC-Q100 RoHS REACH PowerPAK SO-8 lead-free industrial PLC telecom server power
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