BSC098N10NS5ATMA1 vs IPLU300N04S41R1XTMA1 Сравнение
Подробное сравнение бок о бок BSC098N10NS5ATMA1 от Infineon и IPLU300N04S41R1XTMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon
BSC098N10NS5ATMA1 ✓ АктивенInfineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ АктивенСравнение характеристик
| Параметр | BSC098N10NS5ATMA1 | IPLU300N04S41R1XTMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,55 | $3,45 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| Диапазон рабочих температур | [DATA_NEEDED: Tj min/max] | — |
| Корпус | PG-TDSON-8-7 (SuperSO8 5x6) | PG-HSOF-8-1 (8-PowerSFN, surface mount) |
| Тип монтажа | Surface Mount | Surface Mount |
| Статус RoHS | Compliant | — |
| Уровень MSL | 1 | — |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPLU300N04S41R1XTMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 A |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 W |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | — | 1.15 mΩ |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | — | 151 nC |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | — | 12,090 pF |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| Рабочая температура перехода | — | 175 °C |
| Peak Reflow Temperature (AEC-Q) | — | 260 °C |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS Compliance | — | Yes (Green Product) |
| Lead-Free | — | Yes (100% lead-free) |
| Configuration | — | Single with built-in diode |
| Packing | — | Tape & Reel (TR) |