BSC098N10NS5ATMA1 vs IPLU300N04S41R1XTMA1 Comparison

Detailed side-by-side comparison of BSC098N10NS5ATMA1 by Infineon and IPLU300N04S41R1XTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSC098N10NS5ATMA1

BSC098N10NS5ATMA1 - 100V 60A OptiMOS 5 N-Channel MOSFET | Infineon

BSC098N10NS5ATMA1 βœ“ Active
Infineon
IPLU300N04S41R1XTMA1

IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΞ© Automotive MOSFET | Infineon

IPLU300N04S41R1XTMA1 βœ“ Active

Specification Comparison

Parameter BSC098N10NS5ATMA1 IPLU300N04S41R1XTMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $3.45
Technology OptiMOS 5 (N-channel trench MOSFET) OptiMOS (Trench MOSFET)
Drain-Source Voltage (VDS) 100 V β€”
Continuous Drain Current (ID, Tc=25C) 60 A β€”
Continuous Drain Current (ID, Ta) [DATA_NEEDED: ID Ta-rated value] β€”
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] β€”
On-Resistance RDS(on) max @ VGS=10V 9.8 mOhm β€”
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max +/-] β€”
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] β€”
Total Gate Charge (Qg) [DATA_NEEDED: Qg] β€”
Power Dissipation (Tc=25C) 69 W β€”
Power Dissipation (Ta) 2.5 W β€”
Diode Continuous Forward Current (IS) 63 A (Tc=25C) β€”
Diode Pulse Current (IS,pulse) 240 A (Tc=25C) β€”
Diode Forward Voltage (VSD) typ 0.9 V (IF=30 A, Tj=25C) β€”
Diode Forward Voltage (VSD) max 1.1 V (IF=30 A, Tj=25C) β€”
Operating Temperature Range [DATA_NEEDED: Tj min/max] β€”
Package PG-TDSON-8-7 (SuperSO8 5x6) PG-HSOF-8-1 (8-PowerSFN, surface mount)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
MSL Level 1 β€”
Shipping Packaging Tape & Reel (T/R) β€”
Manufacturer β€” Infineon Technologies
Part Number β€” IPLU300N04S41R1XTMA1
FET Type β€” N-Channel, Enhancement Mode
Drain-Source Voltage (V<sub>DS</sub>) β€” 40 V
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) β€” 300 A
Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25Β°C) β€” 300 W
R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) β€” 1.15 mΞ©
Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) β€” 151 nC
Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) β€” 12,090 pF
Gate-Source Voltage (V<sub>GS</sub>) β€” Β±20 V
Operating Junction Temperature β€” 175 Β°C
Peak Reflow Temperature (AEC-Q) β€” 260 Β°C
Avalanche Rating β€” 100% Avalanche Tested
RoHS Compliance β€” Yes (Green Product)
Lead-Free β€” Yes (100% lead-free)
Configuration β€” Single with built-in diode
Packing β€” Tape & Reel (TR)

Datasheets & Resources

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