BSC098N10NS5ATMA1 vs IPLU300N04S41R1XTMA1 对比
详细并排对比 BSC098N10NS5ATMA1 出自 Infineon 和 IPLU300N04S41R1XTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
IPLU300N04S41R1XTMA1 - 40V 300A 1.15mΩ Automotive MOSFET | Infineon
IPLU300N04S41R1XTMA1 ✓ 量产中规格对比
| 参数 | BSC098N10NS5ATMA1 | IPLU300N04S41R1XTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.55 | $3.45 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | OptiMOS (Trench MOSFET) |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID, Tc=25C) | 60 A | — |
| Continuous Drain Current (ID, Ta) | [DATA_NEEDED: ID Ta-rated value] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| On-Resistance RDS(on) max @ VGS=10V | 9.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max +/-] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Power Dissipation (Tc=25C) | 69 W | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Diode Continuous Forward Current (IS) | 63 A (Tc=25C) | — |
| Diode Pulse Current (IS,pulse) | 240 A (Tc=25C) | — |
| Diode Forward Voltage (VSD) typ | 0.9 V (IF=30 A, Tj=25C) | — |
| Diode Forward Voltage (VSD) max | 1.1 V (IF=30 A, Tj=25C) | — |
| 工作温度范围 | [DATA_NEEDED: Tj min/max] | — |
| 封装 | PG-TDSON-8-7 (SuperSO8 5x6) | PG-HSOF-8-1 (8-PowerSFN, surface mount) |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | — |
| MSL 等级 | 1 | — |
| Shipping Packaging | Tape & Reel (T/R) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | IPLU300N04S41R1XTMA1 |
| FET Type | — | N-Channel, Enhancement Mode |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 A |
| Power Dissipation (P<sub>D</sub>, T<sub>C</sub>=25°C) | — | 300 W |
| R<sub>DS(on)</sub> Max (V<sub>GS</sub>=10 V, I<sub>D</sub>=100 A) | — | 1.15 mΩ |
| Gate Charge (Q<sub>g</sub>, V<sub>GS</sub>=10 V) | — | 151 nC |
| Input Capacitance (C<sub>iss</sub>, V<sub>DS</sub>=25 V) | — | 12,090 pF |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| 工作结温 | — | 175 °C |
| Peak Reflow Temperature (AEC-Q) | — | 260 °C |
| Avalanche Rating | — | 100% Avalanche Tested |
| RoHS Compliance | — | Yes (Green Product) |
| Lead-Free | — | Yes (100% lead-free) |
| Configuration | — | Single with built-in diode |
| Packing | — | Tape & Reel (TR) |