BSR316PH6327XTSA1 vs BSP125H6327XTSA1 Сравнение
Подробное сравнение бок о бок BSR316PH6327XTSA1 от Infineon и BSP125H6327XTSA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSR316PH6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,22 | $0,38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR316PH6327XTSA1 | BSP125H6327XTSA1 |
| Series | OptiMOS | — |
| FET Type | P-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | -100 V | 600 V |
| Continuous Drain Current (ID) at TA | -360 mA | — |
| Continuous Drain Current (ID) at TC | [DATA_NEEDED: ID at TC specific value] | — |
| On-State Resistance RDS(on) max | 1800 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | -1.7 V typical, -2.5 V max | — |
| Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (Tc) | 500 mW | — |
| Корпус | PG-SC59-3 (SC-59 / SOT-23 equivalent) | PG-SOT223-4 (SOT-223-3 + tab) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55 C to +150 C (junction) | — |
| Qualification | Automotive | Automotive / Industrial grade |
| Статус RoHS | Compliant | Compliant |
| Уровень MSL | 1 | 1 (Unlimited) |
| Polarity | P-Channel | — |
| Тип транзистора | — | N-Channel MOSFET |
| Technology | — | SIPMOS (Small Signal Power MOSFET) |
| Continuous Drain Current (ID) | — | 120 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| Рабочая температура | — | -55C to +150C (TJ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |