BSR316PH6327XTSA1 vs BSP125H6327XTSA1 比較
詳細な並列比較: BSR316PH6327XTSA1 メーカー: Infineon および BSP125H6327XTSA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | BSR316PH6327XTSA1 | BSP125H6327XTSA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.22 | $0.38 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSR316PH6327XTSA1 | BSP125H6327XTSA1 |
| Series | OptiMOS | — |
| FET Type | P-Channel Enhancement Mode | — |
| Drain-Source Voltage (VDS) | -100 V | 600 V |
| Continuous Drain Current (ID) at TA | -360 mA | — |
| Continuous Drain Current (ID) at TC | [DATA_NEEDED: ID at TC specific value] | — |
| On-State Resistance RDS(on) max | 1800 mOhm at VGS = -10 V | — |
| Gate Threshold Voltage VGS(th) | -1.7 V typical, -2.5 V max | — |
| Gate Charge Qg | [DATA_NEEDED: Qg total] | — |
| Power Dissipation (Tc) | 500 mW | — |
| パッケージ | PG-SC59-3 (SC-59 / SOT-23 equivalent) | PG-SOT223-4 (SOT-223-3 + tab) |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55 C to +150 C (junction) | — |
| Qualification | Automotive | Automotive / Industrial grade |
| RoHS ステータス | Compliant | Compliant |
| MSLレベル | 1 | 1 (Unlimited) |
| Polarity | P-Channel | — |
| トランジスタタイプ | — | N-Channel MOSFET |
| Technology | — | SIPMOS (Small Signal Power MOSFET) |
| Continuous Drain Current (ID) | — | 120 mA (Ta) |
| Power Dissipation (PD) | — | 1.8 W (Ta) |
| 動作温度 | — | -55C to +150C (TJ) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| On-Resistance (RDS(on)) | — | [DATA_NEEDED: RDS(on) at VGS=10V] |
| Configuration | — | Single |
| Channel Mode | — | Enhancement |