BSS119NH6327XTSA1 vs 2N7002H6327XTSA2 Сравнение
Подробное сравнение бок о бок BSS119NH6327XTSA1 от Infineon и 2N7002H6327XTSA2 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSS119NH6327XTSA1 | 2N7002H6327XTSA2 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,12 | $0,08 |
| Тип транзистора | N-Channel MOSFET | N-Channel MOSFET |
| FET Technology | Enhancement-mode, planar N-channel | — |
| Drain-Source Voltage (VDS) max | 100 V | — |
| Continuous Drain Current (ID) at TA=25°C | 190 mA | — |
| Power Dissipation (PD) at TA=25°C | 500 mW | — |
| Drain-Source On-Resistance (RDS(on)) max | 6 Ω (typical) [DATA_NEEDED: exact VGS condition and max value] | — |
| Gate Threshold Voltage (VGS(th)) | 0.8 V to 1.8 V (typical) [DATA_NEEDED: exact min/typ/max] | [DATA_NEEDED: VGS(th) typical value] |
| Gate Drive Voltage (VGS) | ±20 V max | — |
| Корпус | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55°C to +150°C (TJ) [DATA_NEEDED: TA range from datasheet] | -55C to +150C (Tj) |
| Qualification | AEC-Q101 (automotive grade) | Industrial / Commercial Grade |
| Статус RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Packaging | Tape & Reel (3,000 pcs/reel) | — |
| Уровень MSL | 1 [DATA_NEEDED: confirm from datasheet] | 1 (per JEDEC J-STD-020) |
| Technology | — | OptiMOS (Planar) |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 300 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| On-State Resistance (RDS(on)) | — | 3 ohm max @ VGS = 10 V |
| Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Channel Mode | — | Enhancement |