BSS123IXTSA1 vs 2N7002L Сравнение
Подробное сравнение бок о бок BSS123IXTSA1 от Infineon и 2N7002L от onsemi. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | BSS123IXTSA1 | 2N7002L |
|---|---|---|
| Бренд | Infineon | onsemi |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,11 | $0,03 |
| Тип транзистора | N-Channel MOSFET | N-Channel Enhancement Mode MOSFET |
| Technology | OptiMOS Small-Signal | High cell density trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 190 mA | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| RDS(on) (typical, VGS=10 V) | 2.4 ohm | — |
| RDS(on) (max per family datasheet) | 6 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | 1 V to 2.5 V |
| Корпус | PG-SOT-23-3 (SOT-23-3) | SOT-23 (SOT-23-3) |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +150C (per family datasheet) | — |
| Qualification | Industrial | — |
| Configuration | Single N-Channel | Single FET |
| Lead-Free / RoHS | Yes (per distributor listing) | — |
| Уровень MSL | [DATA_NEEDED: MSL rating] | — |
| Gate Drive Logic Level | Logic-level compatible | — |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | — | onsemi |
| Статус RoHS | — | [DATA_NEEDED: RoHS status] |