BSS123IXTSA1 vs 2N7002L 对比
详细并排对比 BSS123IXTSA1 出自 Infineon 和 2N7002L 出自 onsemi。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | BSS123IXTSA1 | 2N7002L |
|---|---|---|
| 品牌 | Infineon | onsemi |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.11 | $0.03 |
| 晶体管类型 | N-Channel MOSFET | N-Channel Enhancement Mode MOSFET |
| Technology | OptiMOS Small-Signal | High cell density trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 60 V |
| Continuous Drain Current (ID) at TA=25C | 190 mA | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| RDS(on) (typical, VGS=10 V) | 2.4 ohm | — |
| RDS(on) (max per family datasheet) | 6 ohm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) min/typ/max] | 1 V to 2.5 V |
| 封装 | PG-SOT-23-3 (SOT-23-3) | SOT-23 (SOT-23-3) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (per family datasheet) | — |
| Qualification | Industrial | — |
| Configuration | Single N-Channel | Single FET |
| Lead-Free / RoHS | Yes (per distributor listing) | — |
| MSL 等级 | [DATA_NEEDED: MSL rating] | — |
| Gate Drive Logic Level | Logic-level compatible | — |
| Continuous Drain Current (ID) | — | 115 mA (Ta) |
| On-State Resistance (RDS(on)) | — | 7.5 ohm max at VGS = 5V |
| Gate-Source Voltage (VGS) | — | +/-20 V |
| Power Dissipation (PD) | — | 200 mW (Ta), 225 mW max |
| Switching Performance | — | Fast switching, rugged and reliable |
| Gate Drive | — | 5V logic-level enhancement mode |
| Typical Applications | — | Low-side switching, servo motor control, gate driving, logic-level shifting |
| Manufacturer | — | onsemi |
| RoHS 状态 | — | [DATA_NEEDED: RoHS status] |