IAUCN08S7N024ATMA1 vs IAUCN10S7L290TATMA1 Сравнение
Подробное сравнение бок о бок IAUCN08S7N024ATMA1 от Infineon и IAUCN10S7L290TATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN08S7N024ATMA1 ✓ АктивенInfineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN08S7N024ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,89 | $0,36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | — |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 165 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| Technology | OptiMOS 7 trench | — |
| Корпус | PG-TDSON-8-34 (8-pin, exposed pad) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Тип монтажа | Surface Mount | Surface Mount |
| Диапазон рабочих температур | -55C to +175C (typical automotive) | — |
| Рассеиваемая мощность (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | — |
| Automotive Qualification | AEC-Q101 | AEC-Q100 qualified |
| RoHS Compliance | Compliant | Compliant |
| Уровень MSL | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | — |
| Product Family | — | OptiMOS™ 7 |
| Тип транзистора | — | N-Channel MOSFET |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25°C | — | 27 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | — | 28.6 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | — | 45 W |
| Рабочая температура перехода | — | -55 °C to +175 °C |
| Lead-Free | — | Yes |
| Avalanche Rated | — | Yes |
| ESD Protection | — | HBM Class 1C (per Infineon datasheet) |