IAUCN08S7N024ATMA1 vs IAUCN10S7L290TATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7N024ATMA1 by Infineon and IAUCN10S7L290TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7N024ATMA1
IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN08S7N024ATMA1 β ActiveInfineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7N024ATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.89 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 80 V | 100 V |
| Continuous Drain Current (ID) at TC=25C | 165 A | β |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | β |
| Technology | OptiMOS 7 trench | β |
| Package | PG-TDSON-8-34 (8-pin, exposed pad) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55C to +175C (typical automotive) | β |
| Power Dissipation (Ptot) | [DATA_NEEDED: Ptot @ TC=25C] | β |
| Automotive Qualification | AEC-Q101 | AEC-Q100 qualified |
| RoHS Compliance | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL rating] | 1 (per JEDEC J-STD-020) |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch | β |
| Product Family | β | OptiMOSβ’ 7 |
| Transistor Type | β | N-Channel MOSFET |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25Β°C | β | 27 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | β | 28.6 mΞ© |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25Β°C | β | 45 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes |
| ESD Protection | β | HBM Class 1C (per Infineon datasheet) |