IAUCN08S7N024ATMA1 - 80V 165A OptiMOS 7 N-Ch MOSFET | Infineon
Артикул: IAUCN08S7N024ATMA1 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.65 | $16,50 |
| 100 | $1.42 | $142,00 |
| 500 | $1.21 | $605,00 |
| 1.000 | $1.05 | $1.050,00 |
| 5.000 | $0.89 | $4.450,00 |
IAUCN08S7N024ATMA1 Обзор
What is an automotive-grade OptiMOS 7 power MOSFET? It is a N-channel enhancement-mode power transistor built on Infineon's latest 80 V OptiMOS 7 trench process, qualified to AEC-Q101 for automotive use. In the broader taxonomy it is a power MOSFET -> discrete semiconductor -> active component. The OptiMOS 7 family improves figure of merit (FOM = RDS(on) × Qg) versus prior OptiMOS generations, enabling lower switching and conduction losses in high-frequency power conversion.
Key features include a maximum drain-source voltage VDS of 80 V, continuous drain current ID of 165 A at 25 °C case temperature, pulsed current handling suitable for inrush and short-circuit conditions, and a logic-level compatible gate drive. The PG-TDSON-8-34 package provides an exposed thermal pad (EP) for direct PCB heatsinking, minimizing thermal resistance from junction to board.
The die uses Infineon's advanced trench MOSFET technology with low gate charge and low output capacitance, optimizing switching performance in high-frequency buck/boost topologies. The 2.4 mΩ RDS(on) specification is measured at VGS = 10 V, and the device maintains low RDS(on) across the automotive temperature range, ensuring predictable conduction loss in safety-critical applications.
Typical applications include 48 V mild-hybrid electric vehicle (MHEV) DC-DC converters, electric power steering (EPS), braking systems, high-current BLDC motor drives, and automotive load switches. The 165 A rating supports high-power 48 V bus architectures used in modern zonal E/E platforms.
When designing with this MOSFET, ensure the PCB layout provides sufficient copper pour area on the exposed pad for thermal dissipation. The gate drive should use a dedicated gate driver IC with sufficient source/sink current for fast switching transitions and minimized dead-time in bridge configurations.
This page synthesizes distributor pricing, drop-in same-brand alternatives, and practical thermal guidance not consolidated on a single distributor product page.
Аналоги без доработки для IAUCN08S7N024ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IAUCN08S7N024ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package, Technology, Operating Temperature Range, Automotive Qualification, Drain-Source Voltage (VDS).
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IAUCN08S7N034ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.48 / шт.
Открыть даташит →IAUCN04S7N006ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.95 / шт.
Открыть даташит →IAUCN04S7L006ATMA1
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$1.38 / шт.
Открыть даташит →IAUCN08S7N024ATMA1 Максимальные параметры и электрические характеристики
| Manufacturer | Infineon Technologies |
| Series | Automotive OptiMOS 7 (80 V) |
| FET Type | N-Channel |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) at TC=25C | 165 A |
| Drain-Source On-Resistance (RDS(on)) max | 2.4 mOhm |
| Technology | OptiMOS 7 trench |
| Корпус | PG-TDSON-8-34 (8-pin, exposed pad) |
| Тип монтажа | Surface Mount |
| Диапазон рабочих температур | -55C to +175C (typical automotive) |
| Automotive Qualification | AEC-Q101 |
| RoHS Compliance | Compliant |
| Typical Application | 48 V automotive DC-DC, motor drive, load switch |
Конфигурация выводов IAUCN08S7N024ATMA1
| Контакт 1 | G — Gate |
| Контакт 2 | D — Drain (also exposed pad) |
| Контакт 3 | S — Source |
| Контакт 4 | S — Source |
| Контакт 5 | S — Source |
| Контакт 6 | S — Source |
| Контакт 7 | S — Source |
| Контакт 8 | S — Source |
Область безопасной работы (DC)
Типичное применение
IAUCN08S7N024ATMA1 подходит для 6 применениеs: 48V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS) Motor Drive, 48V BLDC Motor Drive (PMSM), Automotive High-Side Load Switch, Battery Disconnect / Pyrofuse Replacement, Industrial 48V Solar / Energy Storage.
48V Mild-Hybrid DC-DC Converter
The IAUCN08S7N024ATMA1's 80 V VDS rating with 2.4 mOhm max RDS(on) makes it an ideal synchronous rectifier / high-side switch for 48 V to 12 V DC-DC converters in mild-hybrid electric vehicles (MHEV). At 165 A continuous drain current, the MOSFET handles the full load of a 2-3 kW buck converter without thermal runaway. Compared to a switching regulator using 100 V MOSFETs, the 80 V OptiMOS 7 cuts conduction loss by ~15% at the same RDS(on), enabling smaller magnetic components and higher power density. Reference design: Infineon 48 V MHEV bidirectional DC-DC evaluation board.
Рекомендуется
Electric Power Steering (EPS) Motor Drive
The IAUCN08S7N024ATMA1 is well-suited for the H-bridge leg of an electric power steering (EPS) motor drive running from a 48 V bus. Its 165 A continuous drain current and AEC-Q101 qualification meet automotive safety-critical reliability requirements. The 2.4 mOhm RDS(on) at VGS = 10 V keeps conduction loss manageable during high-torque steering maneuvers. Compared to IGBT-based solutions, this MOSFET switches faster, enabling higher PWM frequencies and quieter motor operation.
Рекомендуется
48V BLDC Motor Drive (PMSM)
For 48 V three-phase BLDC/PMSM motor drives used in electric turbochargers, e-compressors, and electric coolant pumps, the IAUCN08S7N024ATMA1 provides the high continuous current (165 A) and low RDS(on) (2.4 mOhm) needed to minimize thermal stress on the inverter. The exposed-pad PG-TDSON-8-34 package allows direct PCB cooling via copper pours, eliminating the need for a discrete heatsink in compact modules. The OptiMOS 7 low Qg reduces gate drive losses at high PWM frequencies.
Рекомендуется
Automotive High-Side Load Switch
The IAUCN08S7N024ATMA1 is well suited as a high-side load switch for 48 V zonal E/E architectures, replacing mechanical relays and e-fuses. The 80 V rating handles 48 V bus transients including load-dump, and the 165 A continuous rating supports high-power loads such as PTC heaters, active suspension, and electric AC compressors. Compared to a 60 V part, the 80 V class provides additional transient safety margin while the 2.4 mOhm RDS(on) minimizes steady-state loss.
Рекомендуется
Battery Disconnect / Pyrofuse Replacement
In 48 V battery management systems, the IAUCN08S7N024ATMA1 can serve as a solid-state disconnect switch replacing traditional pyrofuses. The 2.4 mOhm RDS(on) limits steady-state voltage drop to <0.4 V at 165 A, while the 80 V VDS rating provides headroom for inductive transients when interrupting load current. AEC-Q101 qualification and the rugged trench process support safety-critical battery isolation requirements in MHEV platforms.
Рекомендуется
Industrial 48V Solar / Energy Storage
Beyond automotive, the IAUCN08S7N024ATMA1 fits industrial 48 V solar charge controllers and energy storage systems (ESS) where high efficiency and high continuous current are required. The 80 V rating handles 48 V battery packs with transient margin, while the 2.4 mOhm RDS(on) and 165 A rating support multi-kilowatt power stages. Compared to standard industrial MOSFETs, the AEC-Q101 qualification provides additional ruggedness in harsh environments.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IAUCN08S7N024ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IAUCN08S7N034ATMA1 | IAUCN04S7N006ATMA1 | IAUCN04S7L006ATMA1 | IPB027N10N3GATMA1 |
|---|---|---|---|---|---|
| Package | PG-TDSON-8-34 (8-pin, exposed pad) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | PG-TDSON-8-34 (same) | D2PAK (different - reference only) |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 40 V | 40 V | 100 V |
| RDS(on) max | 2.4 mOhm | ~3.4 mOhm | ~0.6 mOhm | ~0.6 mOhm (logic-level) | 2.7 mOhm |
| Technology | OptiMOS 7 trench (80 V) | OptiMOS 7 (80 V) | OptiMOS 7 (40 V) | OptiMOS 7 (40 V logic-level) | OptiMOS 3 (100 V) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Pin-Compatible Drop-In | Yes (reference) | Yes (same PG-TDSON-8-34) | Yes (same package, different VDS class) | Yes (same package, logic-level) | No (D2PAK - PCB rework required) |
Ключевые отличия
- Ultra-low RDS(on) of 2.4 mOhm in the 80 V OptiMOS 7 class (против IAUCN08S7N034ATMA1)
- Automotive AEC-Q101 qualification for safety-critical 48 V systems (против IPB027N10N3GATMA1)
- Compact PG-TDSON-8-34 exposed-pad package enables direct PCB cooling (против D2PAK alternatives)
Заметки по проектированию
Estimated: at ID = 100 A continuous in a typical 48 V DC-DC synchronous rectifier stage, the IAUCN08S7N024ATMA1 dissipates approximately 100 A × 100 A × 0.0024 Ω = 24 W of conduction loss. Using the PG-TDSON-8-34 thermal pad, the design must provide at least 6-10 cm² of 2 oz copper pour on top and bottom layers with thermal vias to maintain junction temperature below 150 °C. Without adequate copper, the device will throttle thermally and may fail in sealed automotive underhood environments.
The PG-TDSON-8-34 exposed pad is the primary drain terminal and thermal path. Use an array of thermal vias (0.3 mm drill, 1.0 mm pitch, filled or tented) directly under the EP to conduct heat to inner copper planes. Gate and source traces must be routed with minimal loop area to limit parasitic inductance - a wide, short gate return path from the driver to the source Kelvin pin (if available) suppresses gate ringing and prevents spurious turn-on in half-bridge configurations.
Do not operate the IAUCN08S7N024ATMA1 above its 80 V VDS rating even transiently - avalanche breakdown can permanently damage the die. Ensure TVS diode or snubber protection on the drain for inductive loads (motors, transformers). Verify gate drive voltage does not exceed VGS(max) - for hard-switched applications use a dedicated gate driver IC such as 1EDN7550BXTSA1 with 4-5 V gate voltage regulation. Avoid sharing source inductance between power and gate drive return paths to prevent cross-conduction in bridge topologies.
Place the gate driver IC within 5 mm of the gate pin to minimize gate loop inductance. Use a ground plane on the layer directly beneath the driver and MOSFET to provide a low-impedance return path. For multi-MOSFET parallel configurations, symmetry is critical - matched gate loop lengths and balanced source inductance prevent current imbalance and thermal runaway. Add a small gate-source resistor (10-100 kOhm) to ensure the MOSFET stays off during controller startup.
Информация о соответствии
AEC-Q101 (automotive discrete) qualified per Infineon product page and Arrow listing. RoHS compliant per standard Infineon OptiMOS 7 family compliance. This part is AEC-Q101 qualified (discrete semiconductor automotive standard); AEC-Q100 is the IC version - not applicable here.
