IAUCN10S7L290TATMA1 vs IAUZ30N10S5L240ATMA1 Сравнение
Подробное сравнение бок о бок IAUCN10S7L290TATMA1 от Infineon и IAUZ30N10S5L240ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ АктивенInfineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUCN10S7L290TATMA1 | IAUZ30N10S5L240ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,36 | $0,86 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS™ 7 | — |
| Тип транзистора | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| Рабочая температура перехода | -55 °C to +175 °C | — |
| Корпус | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| Тип монтажа | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Уровень MSL | 1 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| FET Type | — | N-Channel |
| Technology | — | OptiMOS 5 (trench) |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| R_DS(on) max at V_GS=10V | — | 24 mΩ |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Charge (Q_g) typ | — | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | — | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | — | 45.5 W |
| Диапазон рабочих температур | — | -55°C to +175°C (junction, automotive grade) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Статус RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |