IAUCN10S7L290TATMA1 vs IAUZ30N10S5L240ATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7L290TATMA1 by Infineon and IAUZ30N10S5L240ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveInfineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7L290TATMA1 | IAUZ30N10S5L240ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.36 | $0.86 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOSβ’ 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 100 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) at TC=25Β°C | 27 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | β |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | β |
| Power Dissipation (PD) at TC=25Β°C | 45 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| MSL Level | 1 (per JEDEC J-STD-020) | β |
| RoHS Compliance | Compliant | β |
| Lead-Free | Yes | β |
| Avalanche Rated | Yes | β |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | β |
| FET Type | β | N-Channel |
| Technology | β | OptiMOS 5 (trench) |
| Drain-Source Voltage (V_DS) | β | 100 V |
| Continuous Drain Current (I_D, Tc) | β | 30 A |
| R_DS(on) max at V_GS=10V | β | 24 mΞ© |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Charge (Q_g) typ | β | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | β | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | β | 45.5 W |
| Operating Temperature Range | β | -55Β°C to +175Β°C (junction, automotive grade) |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) value] |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |