IAUZ30N08S5N186ATMA1 vs IAUC50N08S5L096ATMA1 Сравнение
Подробное сравнение бок о бок IAUZ30N08S5N186ATMA1 от Infineon и IAUC50N08S5L096ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IAUZ30N08S5N186ATMA1 - 80V 18.6mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N08S5N186ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IAUZ30N08S5N186ATMA1 | IAUC50N08S5L096ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $0,48 | $0,98 |
| Technology | OptiMOS 5 N-Channel Power MOSFET (trench) | — |
| Drain-Source Voltage (VDS) | 80 V | 80 V |
| Continuous Drain Current (ID, Tj) | 30 A | — |
| Power Dissipation (PD, Tc) | 41 W | — |
| On-State Resistance (RDS(on)) | 18.6 mΩ (typical, VGS = 10 V) | — |
| Gate-Source Voltage (VGS) Max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Диапазон рабочих температур | -55 °C to +175 °C (automotive) | -55°C to +175°C |
| Корпус | PG-TSDSON-8-32 (5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Тип монтажа | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Уровень MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Статус RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes / [DATA_NEEDED: halogen-free status] | — |
| Manufacturer | — | Infineon Technologies |
| Product Series | — | OptiMOS 5 |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) | — | 50 A (Tc) |
| Pulsed Drain Current (IDM) | — | 200 A |
| On-Resistance (RDS(on)) | — | 9.6 mΩ max @ VGS=10V, ID=25A |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max rating] |
| Power Dissipation (PD) | — | 60 W (Tc) |
| Lead-Free | — | Yes |