IPT007N06NATMA1 vs IPD90N03S4L02ATMA1 Сравнение
Подробное сравнение бок о бок IPT007N06NATMA1 от Infineon и IPD90N03S4L02ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPT007N06NATMA1 | IPD90N03S4L02ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,84 | $0,58 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | MOSFET (Metal Oxide), OptiMOS-T2 trench |
| Drain-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID, TC=25C) | 300 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Power Dissipation (PD, TC=25C) | 375 W | — |
| Диапазон рабочих температур | -55 C to +175 C (TJ) | — |
| Корпус | PG-HSOF-8-1 (TOLL) | PG-TO252-3-11 (DPAK, surface mount) |
| Тип монтажа | Surface Mount | Surface Mount |
| Configuration | Single N-channel | — |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | — |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | — |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | — |
| Уровень MSL | MSL 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow) |
| Статус RoHS | Compliant | Compliant (Green Package) |
| Lead-Free | Yes | — |
| Без галогенов | Yes | — |
| Standard Pack Quantity | 3000 (Tape & Reel) | — |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Tc | — | 90 A |
| Power Dissipation (PD) at Tc | — | 136 W |
| RDS(on) Max at VGS=10 V | — | 2.2 mΩ |
| RDS(on) Max at VGS=4.5 V | — | [DATA_NEEDED: typical value at VGS=4.5 V] |
| Gate Drive Voltage (VGS) | — | 4.5 V to 10 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: typical value] |
| Рабочая температура перехода | — | -55°C to +175°C |
| Avalanche Rated | — | 100% Avalanche tested |
| Automotive Qualification | — | AEC-Q101 qualified |
| Series | — | OptiMOS-T2 |