IPT007N06NATMA1 vs IPD90N03S4L02ATMA1 对比

详细并排对比 IPT007N06NATMA1 出自 Infineon 和 IPD90N03S4L02ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPT007N06NATMA1 IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon

IPT007N06NATMA1 ✓ 量产中

规格对比

参数 IPT007N06NATMA1 IPD90N03S4L02ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.84 $0.58
Technology OptiMOS 5 (N-channel trench MOSFET) MOSFET (Metal Oxide), OptiMOS-T2 trench
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, TC=25C) 300 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance (RDS(on), VGS=10V max) 0.75 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: VGS max] —
Power Dissipation (PD, TC=25C) 375 W —
工作温度范围 -55 C to +175 C (TJ) —
封装 PG-HSOF-8-1 (TOLL) PG-TO252-3-11 (DPAK, surface mount)
安装类型 Surface Mount Surface Mount
Configuration Single N-channel —
Gate Charge (QG) [DATA_NEEDED: total gate charge] —
Avalanche Energy (EAS) [DATA_NEEDED: single-pulse avalanche energy] —
Thermal Resistance (RthJC max) [DATA_NEEDED: RthJC] —
MSL 等级 MSL 1 (per JEDEC J-STD-020) MSL1 (per JEDEC J-STD-020, up to 260°C peak reflow)
RoHS 状态 Compliant Compliant (Green Package)
Lead-Free Yes —
无卤 Yes —
Standard Pack Quantity 3000 (Tape & Reel) —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at Tc — 90 A
Power Dissipation (PD) at Tc — 136 W
RDS(on) Max at VGS=10 V — 2.2 mΩ
RDS(on) Max at VGS=4.5 V — [DATA_NEEDED: typical value at VGS=4.5 V]
Gate Drive Voltage (VGS) — 4.5 V to 10 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical value]
工作结温 — -55°C to +175°C
Avalanche Rated — 100% Avalanche tested
Automotive Qualification — AEC-Q101 qualified
Series — OptiMOS-T2

数据手册与资源

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