IPT007N06NATMA1 vs IPD90N03S4L02ATMA1 Comparison
Detailed side-by-side comparison of IPT007N06NATMA1 by Infineon and IPD90N03S4L02ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPT007N06NATMA1
IPT007N06NATMA1 - 60V 300A OptiMOS 5 N-FET | Infineon
IPT007N06NATMA1 β ActiveInfineon
IPD90N03S4L02ATMA1 - 30V 90A OptiMOS-T2 N-Channel MOSFET | Infineon
IPD90N03S4L02ATMA1 β ActiveSpecification Comparison
| Parameter | IPT007N06NATMA1 | IPD90N03S4L02ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.84 | $0.58 |
| Technology | OptiMOS 5 (N-channel trench MOSFET) | MOSFET (Metal Oxide), OptiMOS-T2 trench |
| Drain-Source Voltage (VDS) | 60 V | β |
| Continuous Drain Current (ID, TC=25C) | 300 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-Resistance (RDS(on), VGS=10V max) | 0.75 mOhm | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | β |
| Power Dissipation (PD, TC=25C) | 375 W | β |
| Operating Temperature Range | -55 C to +175 C (TJ) | β |
| Package | PG-HSOF-8-1 (TOLL) | PG-TO252-3-11 (DPAK, surface mount) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-channel | β |
| Gate Charge (QG) | [DATA_NEEDED: total gate charge] | β |
| Avalanche Energy (EAS) | [DATA_NEEDED: single-pulse avalanche energy] | β |
| Thermal Resistance (RthJC max) | [DATA_NEEDED: RthJC] | β |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | MSL1 (per JEDEC J-STD-020, up to 260Β°C peak reflow) |
| RoHS Status | Compliant | Compliant (Green Package) |
| Lead-Free | Yes | β |
| Halogen-Free | Yes | β |
| Standard Pack Quantity | 3000 (Tape & Reel) | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 30 V |
| Continuous Drain Current (ID) at Tc | β | 90 A |
| Power Dissipation (PD) at Tc | β | 136 W |
| RDS(on) Max at VGS=10 V | β | 2.2 mΞ© |
| RDS(on) Max at VGS=4.5 V | β | [DATA_NEEDED: typical value at VGS=4.5 V] |
| Gate Drive Voltage (VGS) | β | 4.5 V to 10 V |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: typical value] |
| Operating Junction Temperature | β | -55Β°C to +175Β°C |
| Avalanche Rated | β | 100% Avalanche tested |
| Automotive Qualification | β | AEC-Q101 qualified |
| Series | β | OptiMOS-T2 |