IRF2805PBF vs IRF640NPBF Сравнение
Подробное сравнение бок о бок IRF2805PBF от Infineon и IRF640NPBF от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | IRF2805PBF | IRF640NPBF |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,38 | $0,88 |
| Manufacturer | Infineon Technologies (formerly International Rectifier) | Infineon (formerly International Rectifier) |
| Part Number | IRF2805PBF | — |
| FET Type | N-Channel | — |
| Technology | HEXFET Power MOSFET (IR MOSFET) | HEXFET (5th Generation) |
| Drain-to-Source Voltage (VDS) | 55 V | 200 V |
| Continuous Drain Current (ID) at Tc | 75 A | 18 A |
| Continuous Drain Current (ID) at 25°C | 175 A (pulsed / package-limited) | — |
| On-Resistance RDS(on) max @ VGS=10V | 4.7 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 150 nC | 44.7 nC |
| Power Dissipation (PD) at Tc | 330 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Корпус | TO-220AB (3-pin, through-hole) | TO-220AB (through-hole, 3-pin) |
| Тип монтажа | Through Hole | Through Hole |
| Статус RoHS | Compliant (Pb-free) | Compliant |
| Диапазон рабочих температур | -55 °C to +175 °C | — |
| Configuration | Single N-Channel MOSFET | — |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Рабочая температура перехода | — | -55C to +150C |
| Тип транзистора | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |