IRFB3306PBF - 60V 120A N-Channel HEXFET MOSFET | Infineon
Артикул: IRFB3306PBF ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $1.85 | $1,85 |
| 10 | $1.62 | $16,20 |
| 100 | $1.35 | $135,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $1.05 | $1.050,00 |
IRFB3306PBF Обзор
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to modulate current flow between drain and source. N-channel MOSFETs are the dominant topology for low-voltage, high-current switching because they offer lower on-resistance per unit silicon area than equivalent P-channel devices. Within the broader taxonomy, the IRFB3306PBF belongs to the power MOSFET category, itself a subfamily of discrete semiconductors used in power management and motor drive circuits. The HEXFET (Hexagonal FET) process refers to Infineon's planar cell layout that minimizes Rds(on) while maintaining rugged avalanche performance.
Key electrical specifications include 60V drain-source breakdown voltage (Vdss), ±20V maximum gate-source voltage, 4.2 mΩ maximum Rds(on) at Vgs=10V, and a typical gate charge (Qg) in the tens of nC range. The device withstands 175°C junction temperature and provides an avalanche-rated body diode, making it suitable for hard-switched topologies and inductive load switching.
The TO-220AB through-hole package provides mechanical robustness and excellent thermal coupling to a heatsink. Its three leads (Gate, Drain, Source) are arranged in the industry-standard TO-220 pinout, allowing drop-in compatibility with hundreds of similarly-rated 60V N-channel MOSFETs from multiple manufacturers. The tab is electrically connected to the drain.
Typical applications include secondary-side synchronous rectification in switch-mode power supplies (SMPS), low-voltage battery protection and OR-ing circuits, DC motor drive H-bridges, and high-current solenoid/relay drivers. The combination of very low Rds(on) and high peak current capability makes it particularly attractive for 12V/24V systems where conduction loss directly impacts efficiency.
Designers should verify that the switching frequency, gate drive strength, and heatsink sizing align with the application's thermal budget; at full 120A conduction the 230W dissipation limit demands substantial cooling. The PbF suffix confirms lead-free (RoHS) compliance.
Аналоги без доработки для IRFB3306PBF — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с IRFB3306PBF (тот же форм-фактор и посадочное место) — отличается по Package, Operating Junction Temperature, Lead-Free / RoHS, Technology, MSL Level.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
IRFB3306GPBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFB3006PBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFB3207ZPBF
✅ Прямая замена✓ В наличии
$1.62 / шт.
Открыть даташит →IRFB3307PBF
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRLB4132PBF
✅ Прямая замена✓ В наличии
$0.62 / шт.
Открыть даташит →IRF4905LPBF
✅ Прямая замена✓ В наличии
$0.98 / шт.
Открыть даташит →VBM1603
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
IRFB3306PBF Максимальные параметры и электрические характеристики
| FET Type | N-Channel |
| Technology | IR HEXFET (MOSFET) |
| Drain-Source Voltage (Vdss) | 60 V |
| Continuous Drain Current (Id) at Tc=25°C | 120 A |
| Gate-Source Voltage (Vgs) max | ±20 V |
| Rds(on) max @ Vgs=10V | 4.2 mΩ |
| Gate-Drain Charge (Qgd) typ | 26 nC (nominal) |
| Power Dissipation (Pd) at Tc=25°C | 230 W |
| Рабочая температура перехода | -55°C to +175°C |
| Корпус | TO-220AB (through-hole) |
| Тип монтажа | Through Hole |
| RoHS / Lead-Free (PbF) | Yes (PbF suffix indicates lead-free, RoHS compliant) |
| Avalanche Rated | Yes |
| Body Diode | Intrinsic (avalanche-rated) |
Конфигурация выводов IRFB3306PBF
| Контакт 1 | Gate — Gate control input; ±20V Vgs max, driven by 10V typical logic-level or gate driver |
| Контакт 2 | Drain — Drain terminal; also electrically connected to the metal mounting tab |
| Контакт 3 | Source — Source terminal; power-ground return path |
Область безопасной работы (DC)
Типичное применение
IRFB3306PBF подходит для 6 применениеs: Secondary-Side Synchronous Rectification in SMPS, Uninterruptible Power Supply (UPS) Battery Switch, DC Motor Drive H-Bridge (Low-Voltage 12V/24V/48V), High-Current Solenoid and Relay Driver, Automotive 12V/24V Load Switching and Protection, Solar Charge Controller / Battery Disconnect.
Secondary-Side Synchronous Rectification in SMPS
The IRFB3306PBF is purpose-built for synchronous rectification on the secondary side of switch-mode power supplies, replacing lossy Schottky diodes to achieve >95% efficiency. Its 4.2 mΩ maximum Rds(on) at Vgs=10V drops only ~0.5V at 120A, cutting conduction loss in half versus a 30V Schottky. The intrinsic avalanche-rated body diode handles transformer leakage energy during dead-time, while the TO-220AB tab solders directly to a copper pour or external heatsink for thermal management at multi-kilowatt power levels.
Рекомендуется
Uninterruptible Power Supply (UPS) Battery Switch
In UPS and battery-backup systems the IRFB3306PBF serves as a low-loss disconnect/or-ing switch between battery bank and inverter bus. Its 120A continuous rating handles inverter inrush, while 4.2 mΩ Rds(on) keeps voltage drop below 0.5V at full load, preserving battery runtime. The 60V Vdss comfortably exceeds 48V battery stacks, and the avalanche-rated body diode safely commutates during abrupt load transients when the inverter connects or disconnects.
Рекомендуется
DC Motor Drive H-Bridge (Low-Voltage 12V/24V/48V)
The IRFB3306PBF is well-suited to the bottom and top switches of a 12V/24V H-bridge driving brushed DC motors in robotics, e-bikes, and industrial actuators. Its 4.2 mΩ Rds(on) keeps I²R losses manageable at 50-100A motor currents, while the 175°C junction rating tolerates stalled-rotor inrush events. The TO-220AB package mounts directly to a metal chassis or heatsink bracket, sharing the thermal path with the motor housing for compact designs.
Рекомендуется
High-Current Solenoid and Relay Driver
Industrial solenoid valves, contactors, and latching relays demand high peak currents with low steady-state hold dissipation. The IRFB3306PBF's 120A pulsed capability energizes large solenoids directly, while its low Rds(on) holds the coil energized with minimal heat. A PWM chopper running at 1-10kHz can use this MOSFET for soft-start and hold-current regulation, extending solenoid life by reducing inrush stress on the coil windings.
Рекомендуется
Automotive 12V/24V Load Switching and Protection
In 12V and 24V automotive systems the IRFB3306PBF serves as a solid-state switch for high-current accessories such as heated seats, power inverters, and trailer brake controllers. Its 60V Vdss easily tolerates 24V double-battery jump-start transients, and its avalanche rating absorbs the inductive kick from solenoid and motor loads when switched off. The TO-220AB package is mechanically rugged for under-hood mounting.
Рекомендуется
Solar Charge Controller / Battery Disconnect
Off-grid solar charge controllers use the IRFB3306PBF as a low-side disconnect switch between photovoltaic panel, battery, and load. Its 4.2 mΩ Rds(on) reduces night-time reverse-leakage loss versus a Schottky diode, and its 60V Vdss accommodates 24V panel Voc including temperature derating. The TO-220AB tab connects to an aluminum enclosure acting as heatsink for continuous 50-80A charge currents in mid-sized solar systems.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для IRFB3306PBF — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | IRFB3306GPBF | IRFB3006PBF | IRFB3207ZPBF | IRFB3307PBF | VBM1603 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | TO-220AB | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same | TO-220AB - same |
| Drain-Source Voltage (Vdss) | 60 V | 60 V | 60 V | 75 V | 75 V | 60 V |
| Technology | HEXFET planar | HEXFET planar | HEXFET planar | HEXFET planar | HEXFET planar | Trench MOSFET |
| RoHS / Pb-Free | Yes (PbF) | Yes (PbF) | Yes | Yes (PbF) | Yes (PbF) | Yes |
Ключевые отличия
- Industry-standard 60V/120A/4.2 mΩ benchmark with 50-year HEXFET heritage (против VBM1603)
- Lower Rds(on) than 75V-class TO-220 competitors (против IRFB3207ZPBF)
- Avalanche-rated body diode for hard-switched topologies (против IRLB4132PBF)
Заметки по проектированию
Estimated: at Id=100A and Rds(on)=4.2 mΩ conduction loss is approximately 100² × 0.0042 = 42 W. The TO-220AB RθJA on a 1 sq-in copper pour is roughly 50°C/W, yielding a junction temperature rise of ~42 × 50 = 2100°C above ambient — this is above the 175°C limit. For continuous 100A operation, an external heatsink with RθSA < 0.5°C/W is mandatory, or parallel two MOSFETs to halve conduction loss.
Use wide copper pours (≥50 mil) on drain and source traces to minimize parasitic inductance and resistance. Place gate drive circuitry within 25 mm of the gate pin to avoid ringing; add a 10Ω gate-source resistor to suppress Miller-induced turn-on. For switching frequencies above 50 kHz, use a kelvin source connection (separate source-sense trace) to keep gate drive clean.
Do not exceed ±20V Vgs — static discharge from a fingertip can puncture the thin gate oxide. Always handle the MOSFET with ESD precautions and include a gate-source zener clamp (15V) on the PCB. Also note that the TO-220AB tab is internally connected to the drain, so isolation washers are required if mounting to a grounded heatsink.
Информация о соответствии
PbF suffix confirms lead-free, RoHS-compliant terminal finish. Halogen-free status not stated in the data; AEC-Q101 qualification depends on specific variant - the standard IRFB3306PBF is industrial/consumer grade.
