M7AFS600-FGG256I vs AFS600-2FGG256 Сравнение
Подробное сравнение бок о бок M7AFS600-FGG256I от Microchip Technology и AFS600-2FGG256 от Microchip Technology. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Microchip Technology
M7AFS600-FGG256I - 600K-Gate Mixed-Signal FPGA | Microchip
M7AFS600-FGG256I ✓ АктивенMicrochip Technology
AFS600-2FGG256 - 600K-Gate Mixed-Signal FPGA | Microchip
AFS600-2FGG256 ✓ АктивенСравнение характеристик
| Параметр | M7AFS600-FGG256I | AFS600-2FGG256 |
|---|---|---|
| Бренд | Microchip Technology | Microchip Technology |
| Категория | FPGA & CPLD | FPGA & CPLD |
| Статус жизненного цикла | Активен | Активен |
| Family | Fusion Mixed-Signal FPGA | — |
| System Gates | 600K | Approximately 600,000 gates |
| User I/O | 119 | — |
| Корпус | 256-LBGA (FBGA), 1 mm ball pitch | 256-LBGA |
| Core Voltage | 1.5 V | — |
| Process Technology | 130 nm | 130 nm CMOS |
| Maximum System Frequency | 1098.9 MHz (per distributor parametric listing) | — |
| Embedded Processor | ARM CoreMP7 | — |
| Fabric Type | Flash-based, non-volatile, instant-on | — |
| Analog Subsystem | Integrated configurable analog (per Microchip Fusion family page) | — |
| On-chip Flash Memory | Yes (large flash memory blocks, per Microchip Fusion family page) | — |
| Clock Management | Integrated clock generation and management circuitry (PLLs) | — |
| Temperature Grade | Industrial (I suffix) | — |
| Диапазон рабочих температур | -40C to +85C (industrial grade standard range) | — |
| Тип монтажа | Surface Mount | SMD/SMT |
| Packaging | Tray | Tray |
| Уровень MSL | [DATA_NEEDED: MSL Level] | — |
| Thermal Resistance (theta_JA) | [DATA_NEEDED: Thermal Resistance] | — |
| Product Type | — | Fusion mixed-signal FPGA |
| Configurable Logic Blocks | — | 13,824 CLBs |
| Reported Logic Elements | — | 7,000 LE |
| Number of I/O | — | 119 I/O |
| Package Pin Count | — | 256 balls |
| Package Pitch | — | 1.0 mm |
| Рабочее напряжение питания | — | 1.5 V |
| Рабочая температура | — | 0°C to +70°C |
| Metal Layers | — | 7 layers |
| Configuration Memory | — | Nonvolatile flash |
| Power-Up Feature | — | Live at Power-Up |
| Maximum DDR Data Rate | — | 700 Mbps |
| I/O Features | — | Hot-swappable I/O, programmable slew rate, programmable drive strength, weak pull-up/pull-down |
| Статус RoHS | — | RoHS compliant |
| Lead-Free Status | — | Lead free |