MRFE6P9220HR3 vs MRFE6S9200HR3 Сравнение
Подробное сравнение бок о бок MRFE6P9220HR3 от NXP Semiconductors и MRFE6S9200HR3 от NXP Semiconductors. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | MRFE6P9220HR3 | MRFE6S9200HR3 |
|---|---|---|
| Бренд | NXP Semiconductors | NXP Semiconductors |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $232,20 | $52,30 |
| Тип транзистора | LDMOS, N-Channel Enhancement-Mode, Lateral | N-Channel LDMOS (RF Power) |
| Technology | RF Power MOSFET | Enhancement-mode LDMOS (HV6E) |
| Frequency Range | 865 MHz to 1000 MHz | — |
| Test Frequency | 880 MHz | — |
| Drain-Source Voltage (Vdss) Max | 66 V | — |
| Test Supply Voltage | 28 V | 28 V |
| Test Drain Current | 1.6 A | — |
| Output Power (Avg, N-CDMA) | 47 W | — |
| Peak Output Power | 200 W | — |
| Power Gain (Typ) | 20 dB at 880 MHz | — |
| Drain Efficiency | [DATA_NEEDED: typical drain efficiency % at 47 W avg] | — |
| Корпус | NI-860C3 (NI860ML), ceramic-metal sealed cofired, surface mount | NI-880H-2L ceramic air-cavity |
| Configuration | Common source, 2 elements | — |
| Тип монтажа | Surface Mount with copper heatsink pad | Chassis / flange mount, SMD variant 5.08 mm height |
| Диапазон рабочих температур | [DATA_NEEDED: Tj max / operating range] | — |
| Lead Free Status | Lead Free | Lead Free (per datasheet) |
| Статус RoHS | Compliant | Compliant |
| Frequency | — | 880 MHz (test), broadband up to 1000 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 66 V |
| Test Quiescent Current | — | 1.4 A |
| Output Power (Avg) | — | 58 W (W-CDMA) |
| Power Gain | — | 21 dB at 880 MHz |
| Input Capacitance (Ciss) | — | 557.27 pF at 28 V |
| Operating Mode | — | Class AB, Class C, Doherty |
| Target Application | — | W-CDMA base-station final stage |