UCC21710QDWRQ1 vs UCC21550BDWR Сравнение
Подробное сравнение бок о бок UCC21710QDWRQ1 от Texas Instruments и UCC21550BDWR от Texas Instruments. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Texas Instruments
UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive
UCC21710QDWRQ1 ✓ АктивенTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ АктивенСравнение характеристик
| Параметр | UCC21710QDWRQ1 | UCC21550BDWR |
|---|---|---|
| Бренд | Texas Instruments | Texas Instruments |
| Категория | Power MOSFET Drivers | Power MOSFET Drivers |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $2,74 | $0,88 |
| Функция | Single-channel isolated gate driver | — |
| Isolation Technology | SiO2 capacitive coupling | — |
| Isolation Rating (rms) | 5.7 kVrms (reinforced) | — |
| Working Voltage (rms) | 1.5 kVrms | — |
| Peak Source Current | +10 A | 4 A |
| Peak Sink Current | -10 A | 6 A |
| Target Switches | SiC MOSFETs up to 1700 V, IGBTs | — |
| Propagation Delay (typ.) | 60 ns | — |
| CMTI (min.) | 100 V/ns | — |
| Output Supply Voltage (VCC2/VEE2) | 12.8 V to 18 V | — |
| Input Supply Voltage (VDD/VCCI) | 3 V to 5.5 V | — |
| Protection Features | DESAT, Miller clamp, UVLO, FLT, soft turn-off | — |
| Корпус | 16-SOIC (DW) wide-body | 16-SOIC (DW) |
| Диапазон рабочих температур | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 | — |
| Тип монтажа | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Выходная конфигурация | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| Статус RoHS | — | [DATA_NEEDED: RoHS status] |