UCC21710QDWRQ1 vs UCC21550BDWR Vergleich
Detaillierter Direktvergleich von UCC21710QDWRQ1 von Texas Instruments und UCC21550BDWR von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Texas Instruments
UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive
UCC21710QDWRQ1 ✓ AktivTexas Instruments
UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments
UCC21550BDWR ✓ AktivSpezifikationsvergleich
| Parameter | UCC21710QDWRQ1 | UCC21550BDWR |
|---|---|---|
| Marke | Texas Instruments | Texas Instruments |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $2,74 | $0,88 |
| Funktion | Single-channel isolated gate driver | — |
| Isolation Technology | SiO2 capacitive coupling | — |
| Isolation Rating (rms) | 5.7 kVrms (reinforced) | — |
| Working Voltage (rms) | 1.5 kVrms | — |
| Peak Source Current | +10 A | 4 A |
| Peak Sink Current | -10 A | 6 A |
| Target Switches | SiC MOSFETs up to 1700 V, IGBTs | — |
| Propagation Delay (typ.) | 60 ns | — |
| CMTI (min.) | 100 V/ns | — |
| Output Supply Voltage (VCC2/VEE2) | 12.8 V to 18 V | — |
| Input Supply Voltage (VDD/VCCI) | 3 V to 5.5 V | — |
| Protection Features | DESAT, Miller clamp, UVLO, FLT, soft turn-off | — |
| Gehäuse | 16-SOIC (DW) wide-body | 16-SOIC (DW) |
| Betriebstemperaturbereich | -40 C to +150 C | — |
| Automotive Qualification | AEC-Q100 | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS | Compliant | — |
| Ausgangskonfiguration | — | Dual-channel (dual low-side, dual high-side, or half-bridge) |
| Isolation Type | — | Capacitive coupling, reinforced isolation |
| Isolation Voltage | — | 5000 Vrms |
| CMTI (Common-Mode Transient Immunity) | — | > 125 V/ns |
| VDD Output Supply Range | — | Up to 25 V |
| UVLO Threshold | — | 8 V (VDD UVLO) |
| Programmable Dead Time | — | Yes |
| Disable Function | — | Yes |
| Junction Temperature Range | — | -40 C to +150 C |
| Driven Devices | — | Power MOSFET, SiC MOSFET, GaN FET, IGBT |
| RoHS-Status | — | [DATA_NEEDED: RoHS status] |