UCC21710QDWRQ1 vs UCC21550BDWR 비교

다음의 상세 나란히 비교: UCC21710QDWRQ1 제조: Texas Instruments 및 UCC21550BDWR 제조: Texas Instruments. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Texas Instruments
UCC21710QDWRQ1 UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 ✓ 활성
Texas Instruments
UCC21550BDWR UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR ✓ 활성

사양 비교

파라미터 UCC21710QDWRQ1 UCC21550BDWR
브랜드 Texas Instruments Texas Instruments
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.74 $0.88
기능 Single-channel isolated gate driver —
Isolation Technology SiO2 capacitive coupling —
Isolation Rating (rms) 5.7 kVrms (reinforced) —
Working Voltage (rms) 1.5 kVrms —
Peak Source Current +10 A 4 A
Peak Sink Current -10 A 6 A
Target Switches SiC MOSFETs up to 1700 V, IGBTs —
Propagation Delay (typ.) 60 ns —
CMTI (min.) 100 V/ns —
Output Supply Voltage (VCC2/VEE2) 12.8 V to 18 V —
Input Supply Voltage (VDD/VCCI) 3 V to 5.5 V —
Protection Features DESAT, Miller clamp, UVLO, FLT, soft turn-off —
패키지 16-SOIC (DW) wide-body 16-SOIC (DW)
동작 온도 범위 -40 C to +150 C —
Automotive Qualification AEC-Q100 —
실장 유형 Surface Mount Surface Mount
RoHS Compliant —
출력 구성 — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
Isolation Voltage — 5000 Vrms
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Disable Function — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT
RoHS 상태 — [DATA_NEEDED: RoHS status]

데이터시트 & 자료

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