UCC21710QDWRQ1 vs UCC21550BDWR 对比

详细并排对比 UCC21710QDWRQ1 出自 Texas Instruments 和 UCC21550BDWR 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Texas Instruments
UCC21710QDWRQ1 UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 - ±10A Isolated Gate Driver | TI | Automotive

UCC21710QDWRQ1 ✓ 量产中
Texas Instruments
UCC21550BDWR UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR - 4A/6A Dual Isolated Gate Driver | Texas Instruments

UCC21550BDWR ✓ 量产中

规格对比

参数 UCC21710QDWRQ1 UCC21550BDWR
品牌 Texas Instruments Texas Instruments
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.74 $0.88
功能 Single-channel isolated gate driver —
Isolation Technology SiO2 capacitive coupling —
Isolation Rating (rms) 5.7 kVrms (reinforced) —
Working Voltage (rms) 1.5 kVrms —
Peak Source Current +10 A 4 A
Peak Sink Current -10 A 6 A
Target Switches SiC MOSFETs up to 1700 V, IGBTs —
Propagation Delay (typ.) 60 ns —
CMTI (min.) 100 V/ns —
Output Supply Voltage (VCC2/VEE2) 12.8 V to 18 V —
Input Supply Voltage (VDD/VCCI) 3 V to 5.5 V —
Protection Features DESAT, Miller clamp, UVLO, FLT, soft turn-off —
封装 16-SOIC (DW) wide-body 16-SOIC (DW)
工作温度范围 -40 C to +150 C —
Automotive Qualification AEC-Q100 —
安装类型 Surface Mount Surface Mount
RoHS Compliant —
输出配置 — Dual-channel (dual low-side, dual high-side, or half-bridge)
Isolation Type — Capacitive coupling, reinforced isolation
Isolation Voltage — 5000 Vrms
CMTI (Common-Mode Transient Immunity) — > 125 V/ns
VDD Output Supply Range — Up to 25 V
UVLO Threshold — 8 V (VDD UVLO)
Programmable Dead Time — Yes
Disable Function — Yes
Junction Temperature Range — -40 C to +150 C
Driven Devices — Power MOSFET, SiC MOSFET, GaN FET, IGBT
RoHS 状态 — [DATA_NEEDED: RoHS status]

数据手册与资源

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