1N5711 - 70V 15mA Schottky RF Diode DO-35 | STMicroelectronics
Артикул: 1N5711 ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $0.45 | $0,45 |
| 10 | $0.36 | $3,60 |
| 100 | $0.28 | $28,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.18 | $180,00 |
1N5711 Обзор
A Schottky diode is a semiconductor rectifier formed by a metal-semiconductor junction rather than a conventional PN junction. This construction eliminates minority-carrier storage, so switching between forward and reverse states occurs almost instantaneously, and the forward turn-on voltage is substantially lower than that of silicon PN diodes. Within the component hierarchy, the 1N5711 belongs to small-signal diodes, a subset of signal diodes within the discrete semiconductor family used for detection, mixing, gating, and clamping rather than power rectification.
Key features of the 1N5711 include its high breakdown voltage for a Schottky device (70 V), achieved through a patented guard-ring design originally developed by HP/Agilent and continued by multiple manufacturers including ST and MACOM. The ultrafast switching characteristic supports UHF/VHF detection, video detection, frequency discrimination, sampling gates, and log or A-to-D conversion front ends. The glass DO-35 package provides hermetic sealing for long-term reliability and easy through-hole assembly.
Technically, the guard ring raises the reverse-breakdown ceiling far above typical small-signal Schottkys while retaining picosecond-class switching. Matched batches are available from ST on request, an important option for detector applications requiring pairs with closely tracked forward characteristics. MACOM characterizes the device with 2 pF total capacitance, 1 pF junction capacitance, and 35 ohm dynamic resistance.
Typical applications include high-level UHF/VHF envelope detection in receivers, low-power RF mixing and switching, pulse shaping and fast logic gating, and sample-and-hold sampling bridges in instrumentation.
Design-wise, remember the 15 mA continuous current ceiling: this detector diode is not a rectifier for power supplies. Reverse leakage, typical of Schottky devices, rises sharply with temperature, so derate high-impedance detector designs at elevated ambient temperatures.
This page synthesizes cross-manufacturer equivalents, drop-in alternatives, and practical design notes not consolidated in any single manufacturer datasheet.
Аналоги без доработки для 1N5711 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с 1N5711 (тот же форм-фактор и посадочное место) — отличается по Package, Diode Type, Mounting Type, Repetitive Peak Reverse Voltage (VRRM), Configuration.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
1N6263
✅ Прямая замена✓ В наличии
$0.12 / шт.
Открыть даташит →BAT46WH
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$0.029 / шт.
Открыть даташит →1N5711UR-1
✅ Прямая замена✓ В наличии
Уточнить цену
Открыть даташит →1N5711-1
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
5082-2800
✅ Прямая замена📋 Справочный аналог (нет в каталоге)
1N4148
✅ Прямая замена ⚠️ Характеристики не проверены📋 Справочный аналог (нет в каталоге)
1N5711 Максимальные параметры и электрические характеристики
| Diode Type | Small-signal Schottky barrier (RF) diode |
| Peak Reverse Voltage (VRRM) | 70 V |
| Continuous Forward Current (IF) | 15 mA |
| Power Dissipation | 430 mW |
| Forward Voltage (VF) | 0.41 V (at 1 mA, per MACOM) |
| Total Capacitance | 2 pF |
| Junction Capacitance (Cj) | 1 pF |
| Dynamic Resistance | 35 ohm |
| Breakdown Voltage (VB) | 70 V |
| Switching Speed | Picosecond class (ultrafast, no minority-carrier storage) |
| Junction Structure | Metal-to-silicon junction with PN guard ring |
| Корпус | DO-35 (DO-204AH) hermetic axial-lead glass |
| Тип монтажа | Through-Hole |
| Статус RoHS | Compliant |
Конфигурация выводов 1N5711
| Контакт 1 | Anode — Forward current entry; unmarked lead of the axial glass body |
| Контакт 2 | Cathode — Marked by the band on the DO-35 glass body |
Типичное применение
1N5711 подходит для 6 применениеs: UHF/VHF Envelope Detection, RF Mixing and Switching, Pulse Shaping and Fast Logic Gating, Video Detection and Frequency Discrimination, Sample-and-Hold Sampling Bridges, Log and A-to-D Converter Front Ends.
UHF/VHF Envelope Detection
The 1N5711 is purpose-built for high-level UHF/VHF envelope detection in narrow-band receivers. Its approximately 1 pF junction capacitance and 2 pF total capacitance minimally load high-impedance tank circuits and detector nodes at hundreds of megahertz, preserving sensitivity and selectivity. The 0.41 V forward voltage at 1 mA allows detection of relatively small RF envelopes, while the PN guard-ring structure sustains 70 V reverse swings from strong local signals without breakdown, delivering the broad dynamic range cited in the ST datasheet. Placed as a half-wave rectifier into an RC video load (typically 1k to 1 megohm), the diode converts the RF carrier to a baseband envelope. Matched batches from ST enable balanced detector pairs with tracked forward characteristics.
Рекомендуется
RF Mixing and Switching
In low-power RF mixers and PIN-like switching roles, the 1N5711's picosecond-class switching speed and 35 ohm dynamic resistance make it effective at converting RF signals to intermediate frequencies in simple single-diode or ring topologies. Because the Schottky junction stores no minority carriers, the diode commutates essentially instantaneously with the local-oscillator drive, minimizing conversion loss and intermodulation artifacts at UHF/VHF frequencies. The 70 V breakdown rating tolerates substantial LO drive levels, supporting the high-level mixing applications described in the ST and MACOM datasheets. Designers should drive the diode with sufficient LO power (typically several dBm) to keep it in the low-impedance state, and terminate mixer ports broadband to suppress harmonic products.
Рекомендуется
Pulse Shaping and Fast Logic Gating
The 1N5711 excels in UHF/VHF pulse shaping, sampling, and fast logic gate circuits per the MACOM datasheet. With no reverse-recovery charge, the diode switches between conducting and blocking states in picoseconds, allowing clean edge sharpening of fast pulses and precise clipping of logic transitions without the speed-limiting storage time of PN diodes like the 1N4148. The 0.41 V turn-on defines a low, well-controlled clipping threshold, useful in ECL-adjacent and RF gating circuits. Typical circuits include diode-bridge sampling gates for sample-and-hold front ends, where pairs of matched 1N5711 devices steer fast current pulses into a holding capacitor; requesting matched batches from ST minimizes pedestal error from device mismatch.
Рекомендуется
Video Detection and Frequency Discrimination
Video detectors and frequency discriminators in receivers use the 1N5711 for its broad dynamic range and low 1/f noise behavior. In a video detector, the diode rectifies the IF or RF carrier into a video-bandwidth load; the 1N5711's low junction capacitance keeps the detector's frequency response flat across the UHF/VHF range, while the 70 V rating permits operation with high-level inputs without compression-induced damage. In ratio-type discriminators, two detector arms benefit from ST's matched-batch option, which provides pairs with closely tracked forward voltages for balanced output. The hermetic DO-35 glass package stabilizes characteristics over humidity and temperature, supporting repeatable video calibration in instrumentation receivers and monitoring equipment.
Рекомендуется
Sample-and-Hold Sampling Bridges
Sampling bridges in data-acquisition and instrumentation front ends leverage the 1N5711's picosecond switching and 100 ps-class effective carrier lifetime to aperture sample fast analog signals onto a hold capacitor. Four 1N5711 diodes arranged in a bridge, steered by complementary drive pulses, connect the signal source to the hold capacitor for an extremely brief, precisely defined interval; the low junction capacitance (about 1 pF) limits charge injection, and the low turn-on voltage reduces required drive amplitude. The 70 V rating accommodates large steering swings. Matching across the bridge is the dominant error source, so matched batches from ST on request are an important option; residual droop is managed with a high-impedance buffer such as a JFET-input amplifier.
Рекомендуется
Log and A-to-D Converter Front Ends
Successive-detection log amplifiers and A-to-D conversion front ends use cascaded 1N5711 detector stages to compress a wide dynamic RF range into a logarithmic video output. The diode's exponential Schottky I-V characteristic with approximately 0.41 V turn-on provides a stable detection reference per stage, and its low capacitance keeps per-stage time constants short enough for wideband operation. The ST datasheet explicitly lists log or A-to-D converting among the device's intended uses, with broad dynamic range attributed to the 70 V guard-ring breakdown allowing high-level stages to operate without breakdown. Temperature compensation via a matched tracking diode in the reference path is standard practice; matched batches from ST support this correction technique directly.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для 1N5711 — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | 1N6263 | 1N5711UR-1 | 5082-2800 | 1N4148 |
|---|---|---|---|---|---|
| Package | DO-35 (DO-204AH) axial glass | DO-35 (DO-204AH) - same | DO-35 (DO-204AH) - same | DO-35 (DO-204AH) - same | DO-35 (DO-204AH) - same |
| Brand | STMicroelectronics | STMicroelectronics | Microchip Technology | Broadcom (HP/Agilent legacy) | STMicroelectronics |
| Diode Technology | Schottky barrier with PN guard ring | Schottky barrier with PN guard ring | Schottky barrier (military screened) | Schottky barrier | Silicon PN junction switching |
| Peak Reverse Voltage | 70 V | 40 V | 70 V | 70 V | 100 V |
| Screening / Grade | Commercial | Commercial | JAN / JANTXV military | Legacy commercial (obsolete) | Commercial |
Ключевые отличия
- Highest reverse-voltage ceiling in the small-signal Schottky class (против 1N6263)
- Ultra-low capacitance for RF sensitivity (против 1N4148)
- Low turn-on voltage (против 1N4148)
- Honest trade-off: current and leakage limits (против BAT46)
- Multi-source industry-standard part number (против 5082-2800)
Заметки по проектированию
Do not use the 1N5711 as a power rectifier. The 15 mA continuous current ceiling and roughly 6 mV-to-mW forward conduction budget make it strictly a signal-level device. Exceeding 15 mA raises junction temperature rapidly toward the 430 mW dissipation limit and accelerates Schottky degradation. For rectifier duties choose a power Schottky such as STTH102AY. Also verify peak reverse swing in detector and mixer circuits stays well below the 70 V rating, including LO drive transients and antenna-induced surges.
Reverse leakage of the Schottky junction approximately doubles every 10 degrees C, which loads high-impedance detector nodes and shifts DC operating points in video detectors. Estimated: at a 1 megohm detector load, even 100 nA of leakage creates a 100 mV offset. Derate designs for elevated ambient temperature, keep the diode away from hot components, and consider a matched compensation diode in the bias network - ST offers matched batches on request specifically for balanced detector pairs.
The DO-35 axial package is a through-hole part; keep lead lengths short in UHF/VHF detector circuits because lead inductance (roughly a few nH per lead) adds to the effective series impedance at high frequency. Estimated: 5 mm of lead is roughly 3-5 nH, about 15-25 ohm reactance at 1 GHz, which is significant against a 35 ohm dynamic resistance. Solder the diode directly across the detector node with minimal lead stubs, and place the video load resistor physically close to the diode cathode.
In sampling bridges and mixer applications, matching between diodes dominates system accuracy. Pair mismatch in forward voltage creates pedestal error in sampling gates and carrier leakage in mixers. Request matched batches from ST (available on request per the datasheet) or use manufacturer-matched quads where available. Keep steering-pulse drive amplitude consistent, and terminate all mixer ports broadband to suppress harmonic and image products.
Информация о соответствии
RoHS compliant per STMicroelectronics product data for the DO-35 glass package. Glass-body construction is inherently halogen-free. Military variant 1N5711UR-1 may be offered with tin-lead (e3) plating - verify suffix on ordering code.
