1N5711UR-1 - 50V 33mA Schottky Barrier Diode | Microchip
MPN: 1N5711UR-1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for 1N5711UR-1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1N5711UR-1E3
β Drop-Inπ Reference alternative (not in catalog)
CDLL5711
β Drop-Inπ Reference alternative (not in catalog)
CDLL5711E3
β Drop-Inπ Reference alternative (not in catalog)
1N5712UR-1
β Drop-Inπ Reference alternative (not in catalog)
1N6857UR-1
β Drop-Inπ Reference alternative (not in catalog)
1N5711UR-1 Maximum Ratings & Electrical Characteristics
| Diode Type | Schottky barrier diode |
| Reverse Voltage (Vr) | 50 V |
| Average Forward Current | 33 mA |
| Configuration | Single diode |
| Package | DO-213AA (MELF / SOD-80 / LL34), hermetically sealed glass |
| Mounting Type | Surface Mount |
| Construction | Metallurgically bonded |
| Qualification Grade | Military grade (1N prefix, high reliability) |
| Terminal Finish | Tin/lead plated or RoHS-compliant matte tin over copper-clad steel (commercial grade) |
| Solderability | MIL-STD-750 method 2026 |
| Family Members | 1N5711UR-1, 1N5712UR-1, 1N6857UR-1, 1N6858UR-1, CDLL equivalents |
1N5711UR-1 Pin Configuration
| Pin 1 | Anode β Anode terminal of the Schottky barrier junction (polarity marked on reel/packaging; cylindrical MELF body is unmarked) |
| Pin 2 | Cathode β Cathode terminal; conventional DO-213AA marking band or polarity indicated per datasheet mechanical drawing |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1N5711UR-1 is suitable for 6 applications: RF Signal Detection and Mixing, High-Reliability Military and Aerospace Systems, High-Speed Switching and Clamping Circuits, Test and Measurement Instrumentation, Low-Current Auxiliary Power and Reverse-Polarity Protection, Legacy Tin-Lead Soldering and Mixed-Technology Boards.
RF Signal Detection and Mixing
The 1N5711UR-1 fits RF detection and mixing circuits because its Schottky metal-semiconductor junction conducts on majority carriers, eliminating minority-carrier storage time and enabling the fast switching response that detector and mixer diodes require. Its low junction construction supports small-signal operation at the 33 mA rated current, and the 50 V reverse rating provides margin against RF envelope peaks. In a typical detector, the diode rectifies the RF carrier ahead of an RC low-pass filter to recover the modulation envelope. The hermetic DO-213AA glass MELF package preserves consistent junction characteristics in humidity and temperature extremes, which matters for fielded RF test and military communication equipment. Performance trade-off: at very low signal levels, diode turn-on voltage determines sensitivity, so bias point selection in the detector network directly sets detection threshold and dynamic range.
Recommended
High-Reliability Military and Aerospace Systems
The 1N5711UR-1 is purpose-built for high-reliability defense and aerospace platforms. Microchip's product page states the family is metallurgically bonded and offers military grade qualifications on the "1N" prefixed numbers, and the hermetically sealed glass DO-213AA package protects the die against moisture ingress, outgassing contaminants, and mechanical shock - failure modes that plague plastic-molded commercial diodes in these environments. Terminals with tin/lead plating suit legacy tin-lead soldering flows still common in defense programs, while E3/CDLL variants provide RoHS matte-tin options. Solderability is verified per MIL-STD-750 method 2026, giving program offices documented process compatibility. The design trade-off is cost and size: this MELF part costs more than commercial equivalents, so it should be reserved for boards where qualification heritage and environmental hardening justify the premium.
Recommended
High-Speed Switching and Clamping Circuits
Because a Schottky barrier diode has essentially no reverse recovery charge, the 1N5711UR-1 switches between forward and reverse states far faster than a comparable P-N junction small-signal diode such as a 1N4148-class part. This makes it well suited to high-speed clamps, anti-parallel protection diodes, and logic-level switching networks operating well above the speed limits of conventional junction diodes. Its 50 V reverse rating covers most low-voltage logic and analog clamp nodes with margin, while the 33 mA rating bounds the clamp current the diode can sustain continuously. In a typical clamp, the diode holds a node below a reference rail; the near-zero recovery time prevents charge-injection glitches when the node transitions. Trade-off: Schottky leakage rises with temperature, so hot environments increase the effective clamp floor.
Recommended
Test and Measurement Instrumentation
In bench instruments, RF probes, and envelope detectors, the 1N5711UR-1 provides repeatable rectification with minimal switching loss. Schottky barrier technology keeps conduction fast and free of recovery transients, so measurement front ends see less distortion of fast edges; the 50 V rating tolerates input overshoot on probe inputs, and the 33 mA current rating comfortably covers small-signal detector duty. The cylindrical MELF body exhibits low parasitic inductance relative to leaded axial parts, which preserves HF measurement fidelity when placed with short pads. Because instrumentation frequently ships worldwide and faces thermal cycling, the hermetic glass package keeps forward-voltage characteristics stable over time, reducing calibration drift. Design note: pair the diode with a temperature-compensating reference or software correction because Schottky forward voltage has a significant negative temperature coefficient.
Recommended
Low-Current Auxiliary Power and Reverse-Polarity Protection
For low-current bias rails, standby supplies, and reverse-polarity guard positions drawing well below the 33 mA rating, the 1N5711UR-1 offers the classic Schottky advantage of reduced forward voltage drop, which conserves voltage headroom in precision analog front ends. Its 50 V reverse rating suits 24 V industrial buses with margin, and the hermetic package survives harsh factory environments where condensation or corrosive atmospheres would attack unprotected junctions. In a typical reverse-polarity guard, the diode is placed in series with the supply path so conduction loss is minimized by the Schottky junction. The metallurgically bonded die adds mechanical robustness against vibration in industrial and vehicular settings. Trade-off: Schottky reverse leakage is higher than P-N silicon, so leakage-sensitive nodes (very high impedance sense lines) may require a different topology.
Recommended
Legacy Tin-Lead Soldering and Mixed-Technology Boards
Many defense and avionics assemblies still use tin-lead solder profiles, and the 1N5711UR-1's tin/lead plated terminal option (per the Microchip family datasheet) makes it compatible with those flows without introducing pure-tin whisker risk. For mixed-technology boards that must combine legacy tin-lead sections with RoHS-compliant sections, Microchip offers the same die family in RoHS matte-tin E3 variants, letting one footprint qualify both finish types. The DO-213AA MELF body reflows reliably on cylindrical pads and resists tombstoning better than small two-terminal chip packages because its mass is centered on the pad. Engineers should specify finish type explicitly on the purchase order, since the same base number exists with both finishes. Verification: solderability is documented per MIL-STD-750 method 2026, supporting process qualification reports.
Recommended
Recommended Products Summary
Engineering reference data for 1N5711UR-1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1N5711UR-1E3 | CDLL5711 | CDLL5711E3 | 1N5712UR-1 | 1N6857UR-1 |
|---|---|---|---|---|---|---|
| Package | DO-213AA (MELF / SOD-80 / LL34), hermetic glass | DO-213AA (MELF) - same | DO-213AA (MELF) - same | DO-213AA (MELF) - same | DO-213AA (MELF) - same | DO-213AA (MELF) - same |
| Brand | Microchip Technology (Microsemi) | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Diode Type | Schottky barrier, metallurgically bonded | Schottky barrier, same die | Schottky barrier, same die | Schottky barrier, same die | Schottky barrier, family grade differs | Schottky barrier, family grade differs |
| Reverse Voltage | 50 V | 50 V (same die) | 50 V (same die) | 50 V (same die) | [DATA_NEEDED] | [DATA_NEEDED] |
| Forward Current | 33 mA | 33 mA (same die) | 33 mA (same die) | 33 mA (same die) | [DATA_NEEDED] | [DATA_NEEDED] |
| Terminal Finish | Tin/lead plated or matte-tin (commercial grade) | RoHS matte tin (E3) | Tin/lead or matte-tin per ordering option | RoHS matte tin (E3) | Tin/lead or matte-tin per ordering option | Tin/lead or matte-tin per ordering option |
| Qualification Designator | Military grade (1N prefix, Hi-Rel) | Military grade (1N prefix) | COTS packaged (CDLL prefix) | COTS packaged (CDLL prefix) | Military grade (1N prefix) | Military grade (1N prefix) |
| Unit Price (Qty 1) | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Military-grade qualification with hermetic glass packaging (vs 1N5711WS-7-F)
- RoHS-compliant finish available in same footprint (vs CDLL5711)
- Known 50 V / 33 mA grade vs higher-current family members (vs 1N6857UR-1)
Design Notes
The 1N5711UR-1 is rated for only 33 mA average forward current - do not use it in power rectification roles. At currents approaching the rating, Schottky forward voltage rise increases dissipation in the small MELF body, so verify average and peak repetitive currents against the manufacturer datasheet. Also note the cylindrical DO-213AA body is visually non-polarized: track cathode orientation via board silkscreen or polarity band per the datasheet mechanical drawing to avoid reversed installation in assembly.
MELF (SOD-80/LL34) pads differ from chip-component pads. Use the datasheet mechanical drawing dimensions and maintain minimum clearance between the glass body and the mounting surface in all orientations, as instructed in the Microchip family datasheet. On wave-solder or reflow profiles, cylindrical MELF bodies can roll during placement; pad retention notches or gluing may be needed for high-vibration platforms. Confirm terminal finish (tin/lead vs E3 matte-tin) against your soldering alloy to avoid mixed-metallurgy issues.
Estimated: at a representative 30 mA forward current with a typical small-signal Schottky forward voltage near 0.4 V, dissipation is roughly 12 mW, which is trivial for a hermetic MELF package. However, Schottky reverse leakage approximately doubles roughly every 10 C, so in hot environments (e.g., 125 C ambient military platforms) leakage current in reverse-biased clamp nodes can become a measurable error term. Consult the datasheet leakage-versus-temperature curves when designing leakage-sensitive circuits.
Compliance Information
Per the Microchip family datasheet, terminals are available as tin/lead plated OR RoHS-compliant matte-tin (commercial grade) over copper-clad steel; compliance is configuration-dependent (E3 suffix and CDLL variants indicate matte-tin finish). This part follows military qualification practices rather than AEC-Q100 automotive qualification.
